JPS57210672A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57210672A
JPS57210672A JP9394881A JP9394881A JPS57210672A JP S57210672 A JPS57210672 A JP S57210672A JP 9394881 A JP9394881 A JP 9394881A JP 9394881 A JP9394881 A JP 9394881A JP S57210672 A JPS57210672 A JP S57210672A
Authority
JP
Japan
Prior art keywords
source
gate
drain
film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9394881A
Other languages
English (en)
Inventor
Yoshihiro Takemae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9394881A priority Critical patent/JPS57210672A/ja
Publication of JPS57210672A publication Critical patent/JPS57210672A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
JP9394881A 1981-06-19 1981-06-19 Semiconductor device Pending JPS57210672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9394881A JPS57210672A (en) 1981-06-19 1981-06-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9394881A JPS57210672A (en) 1981-06-19 1981-06-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57210672A true JPS57210672A (en) 1982-12-24

Family

ID=14096654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9394881A Pending JPS57210672A (en) 1981-06-19 1981-06-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57210672A (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240968A (en) * 1975-09-29 1977-03-30 Toshiba Corp Process for production of semiconductor device
JPS5282078A (en) * 1975-12-29 1977-07-08 Fujitsu Ltd Production of mos transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240968A (en) * 1975-09-29 1977-03-30 Toshiba Corp Process for production of semiconductor device
JPS5282078A (en) * 1975-12-29 1977-07-08 Fujitsu Ltd Production of mos transistor

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