JPS57202535A - Formation of negative resist pattern - Google Patents
Formation of negative resist patternInfo
- Publication number
- JPS57202535A JPS57202535A JP8756981A JP8756981A JPS57202535A JP S57202535 A JPS57202535 A JP S57202535A JP 8756981 A JP8756981 A JP 8756981A JP 8756981 A JP8756981 A JP 8756981A JP S57202535 A JPS57202535 A JP S57202535A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- plasma
- resist
- resist pattern
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8756981A JPS57202535A (en) | 1981-06-09 | 1981-06-09 | Formation of negative resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8756981A JPS57202535A (en) | 1981-06-09 | 1981-06-09 | Formation of negative resist pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57202535A true JPS57202535A (en) | 1982-12-11 |
| JPS6360893B2 JPS6360893B2 (enrdf_load_stackoverflow) | 1988-11-25 |
Family
ID=13918624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8756981A Granted JPS57202535A (en) | 1981-06-09 | 1981-06-09 | Formation of negative resist pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57202535A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57211143A (en) * | 1981-06-23 | 1982-12-24 | Oki Electric Ind Co Ltd | Formation of micropattern |
| JPS60241225A (ja) * | 1984-05-14 | 1985-11-30 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 陰画レジスト像を生成する方法 |
| JPS61107346A (ja) * | 1984-10-26 | 1986-05-26 | ユセベ エレクトロニックス,ソシエテ アノニム | フォトレジスト層中にネガ図形を形成する方法 |
| JPS61219034A (ja) * | 1985-03-19 | 1986-09-29 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 耐プラズマ性重合体物質の製法 |
| JPS62115153A (ja) * | 1985-09-03 | 1987-05-26 | ゼネラル・エレクトリツク・カンパニイ | 有機フイルムから有機物質をパタ−ン化して除去する方法 |
-
1981
- 1981-06-09 JP JP8756981A patent/JPS57202535A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57211143A (en) * | 1981-06-23 | 1982-12-24 | Oki Electric Ind Co Ltd | Formation of micropattern |
| JPS60241225A (ja) * | 1984-05-14 | 1985-11-30 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 陰画レジスト像を生成する方法 |
| JPS61107346A (ja) * | 1984-10-26 | 1986-05-26 | ユセベ エレクトロニックス,ソシエテ アノニム | フォトレジスト層中にネガ図形を形成する方法 |
| JPH0220869A (ja) * | 1984-10-26 | 1990-01-24 | Ucb Sa | 乾式現像用レジスト |
| JPS61219034A (ja) * | 1985-03-19 | 1986-09-29 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 耐プラズマ性重合体物質の製法 |
| JPS62115153A (ja) * | 1985-09-03 | 1987-05-26 | ゼネラル・エレクトリツク・カンパニイ | 有機フイルムから有機物質をパタ−ン化して除去する方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6360893B2 (enrdf_load_stackoverflow) | 1988-11-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5730829A (en) | Micropattern formation method | |
| JPS5635130A (en) | Resist material and method for forming resist pattern | |
| JPS5569265A (en) | Pattern-forming method | |
| JPS57168246A (en) | Formation of negative pattern | |
| JPS57202534A (en) | Negative type resist composition | |
| JPS57202535A (en) | Formation of negative resist pattern | |
| JPS57202533A (en) | Formation of pattern | |
| JPS57168247A (en) | Formation of negative pattern | |
| JPS5515149A (en) | Forming method of resist for microfabrication | |
| JPS57157241A (en) | Formation of resist material and its pattern | |
| JPS57141642A (en) | Formation of pattern | |
| EP0318956A3 (en) | Positive-working photoresist compositions and use thereof for forming positive-tone relief images | |
| JPS54141573A (en) | Mask for exposure | |
| JPS55134847A (en) | Manufacture of resist image | |
| JPS5421271A (en) | Pattern forming method | |
| JPS5511301A (en) | Method of forming fine pattern | |
| JPS57141641A (en) | Formation of positive pattern | |
| JPS5642346A (en) | Manufacture of semiconductor device | |
| JPS57122530A (en) | Photoetching method | |
| JPS578541A (en) | Positive type resist material | |
| JPS56111226A (en) | Formation of fine pattern | |
| JPS56107241A (en) | Dry etching method | |
| JPS54145126A (en) | Pattern formation material | |
| JPS57185036A (en) | Resist and method for forming micropattern | |
| JPS6462491A (en) | Formation of metallic pattern |