JPS57195218A - Non-linear element - Google Patents
Non-linear elementInfo
- Publication number
- JPS57195218A JPS57195218A JP56080243A JP8024381A JPS57195218A JP S57195218 A JPS57195218 A JP S57195218A JP 56080243 A JP56080243 A JP 56080243A JP 8024381 A JP8024381 A JP 8024381A JP S57195218 A JPS57195218 A JP S57195218A
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal
- linear element
- subsequently
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
PURPOSE:To improve a driving duty of a non-linear element, by forming an insulating film in the non-linear element consisting of a metal-an insulating film-a metal, with an Si oxide film obtained by oxidizing an Si layer. CONSTITUTION:An island 51 of a metallic film of Ta, etc. is formed on a glass substrate 50. Subsequently, an Si film 52 of about 100-300Angstrom is formed by low temperature deposition of the spatter and plasma CVD method, and after that, this Si film 52 is oxidized. As for the oxidizing method, for instance, oxidation is performed in a plasma state by leading O2 gas of about 0.1-10Torrs into a vacuum chamber. As for other method, anodic oxidation can be executed by applying voltage of about 100V in a solution of citric acid, etc. Subsequently, a metallic layer 54 of the upper part is formed, and a non-linear element consisting of a metal-an insulating film-a metal is obtained. In this way, an Si film is formed on the metallic fil of Ta, etc. at first, and subsequently, this Si film is oxidized, by which an Si oxide film which is excellent in its film quality is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56080243A JPS57195218A (en) | 1981-05-27 | 1981-05-27 | Non-linear element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56080243A JPS57195218A (en) | 1981-05-27 | 1981-05-27 | Non-linear element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57195218A true JPS57195218A (en) | 1982-11-30 |
| JPH0210923B2 JPH0210923B2 (en) | 1990-03-12 |
Family
ID=13712878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56080243A Granted JPS57195218A (en) | 1981-05-27 | 1981-05-27 | Non-linear element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57195218A (en) |
-
1981
- 1981-05-27 JP JP56080243A patent/JPS57195218A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0210923B2 (en) | 1990-03-12 |
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