JPH01180998A - Selective anodic oxidation method - Google Patents

Selective anodic oxidation method

Info

Publication number
JPH01180998A
JPH01180998A JP451388A JP451388A JPH01180998A JP H01180998 A JPH01180998 A JP H01180998A JP 451388 A JP451388 A JP 451388A JP 451388 A JP451388 A JP 451388A JP H01180998 A JPH01180998 A JP H01180998A
Authority
JP
Japan
Prior art keywords
anodic oxidation
metal
film
selective
elastic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP451388A
Other languages
Japanese (ja)
Inventor
Hisashi Nobunaga
延永 尚志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP451388A priority Critical patent/JPH01180998A/en
Publication of JPH01180998A publication Critical patent/JPH01180998A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To simply subject the surface of a metal to selective anodic oxidation by coating the surface of the metal with an elastic material having a prescribed shape and anodically oxidizing the surface of the metal with the elastic material as a mask. CONSTITUTION:Butyl rubber 3 having the shape of a terminal part is pressed against the surface of a metallic Ta film 2 formed on a substrate 1 to coat the surface of the film 2. Anodic oxidation is then carried out for about 30min with DC of about 40V and an electrolytic soln. consisting of phosphoric acid, ethylene glycol and water to form a Ta oxide film 2a on the surface of the film 2 except the coated part. The surface of the metal can be subjected to selective anodic oxidation in the simplified stages.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は金属表面の陽極酸化法に関し、特に選択陽極酸
化に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for anodizing metal surfaces, and particularly to selective anodic oxidation.

〔従来の技術〕[Conventional technology]

従来の陽極酸化法としては、金属表面を陽極酸化する際
、金属表面の一部を陽極酸化されなくない部分がある場
合、−反金属表面全面を陽極酸化した後、陽極酸化膜上
に酸化されたくなかった部分以外の所にレジスト層を形
成し、このレジスト層をマスクとして酸化膜をエツチン
グして金属面を露出させていた。
In the conventional anodizing method, when a metal surface is anodized, if there is a part of the metal surface that is not anodized, - After anodizing the entire surface of the anti-metal, the oxidized film is added to the anodized film. A resist layer was formed in areas other than the parts that were not desired, and the oxide film was etched using this resist layer as a mask to expose the metal surface.

また別の方法としては、予め陽極酸化されたくない部分
にレジスト層を形成し、これをマスク材にして選択的に
陽極酸化する方法が用いられていた。
Another method has been to use a method in which a resist layer is formed in advance on portions that are not desired to be anodized, and this is used as a mask material to perform selective anodic oxidation.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、前述の従来技術では、金属表面全面を陽
極酸化する方法については、酸化膜をエツチングするた
めのレジスト層形成工程やエツチング工程、レジスト剥
離工程が必要である。またあらかじめレジスト層を形成
し選択陽極酸化する方法についてもレジスト層形成工程
とレジスト層剥離工程が必要てあり、工程が複雑になる
という問題点があった。
However, in the above-mentioned prior art, the method of anodic oxidizing the entire metal surface requires a resist layer forming step, an etching step, and a resist stripping step for etching the oxide film. Furthermore, the method of forming a resist layer in advance and performing selective anodic oxidation also requires a resist layer forming step and a resist layer peeling step, making the process complicated.

本発明は上記の問題点を解決するもので、その目的とす
るところは、工程を簡略化し、量産性に優れ、実用性の
高い選択陽極酸化法を提供することにある。
The present invention is intended to solve the above problems, and its purpose is to provide a selective anodizing method that simplifies the process, has excellent mass productivity, and is highly practical.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の選択陽極酸化法は、 金属表面上に所定形状を有する弾性物質で被覆する工程
と、 前記弾性物質をマスクとして前記金属表面を陽極酸化す
る工程と からなることを特徴とする。
The selective anodizing method of the present invention is characterized by comprising the steps of: coating a metal surface with an elastic material having a predetermined shape; and anodizing the metal surface using the elastic material as a mask.

〔作 用〕[For production]

本発明の作用を述べれは、金属面に弾性物質を被覆する
と、金属面が電解質と非接触で電解質の陰イオンの供給
がないなめ陽@酸化されない。
The operation of the present invention is as follows: When a metal surface is coated with an elastic substance, the metal surface is not in contact with the electrolyte and is not supplied with electrolyte anions, so that it is not oxidized.

〔実 施 例〕〔Example〕

以下、本発明について、実施例に基つき詳細に説明する
Hereinafter, the present invention will be described in detail based on examples.

第1図は本発明の実施例を工程順に示す図である。まず
第1図(a>の如く、基板1上に形成したTa金属膜2
表面上に端子部の形状を有するブチルゴム3を被覆する
。被覆法は電解液がシールてきる方法であれは良く、機
械的に押し当てたり、真空シールしても良い。また、弾
性物質としては、シール性に優れ、耐候性、耐薬品性、
電気絶縁性等の特性により選択することか可能である。
FIG. 1 is a diagram showing an embodiment of the present invention in the order of steps. First, as shown in FIG. 1 (a), a Ta metal film 2 is formed on a substrate 1.
Butyl rubber 3 having the shape of a terminal portion is coated on the surface. The coating method may be any method that seals the electrolyte, and may be mechanically pressed or vacuum sealed. In addition, as an elastic material, it has excellent sealing properties, weather resistance, chemical resistance,
It is possible to select according to characteristics such as electrical insulation.

次いで第1図(b)の如く、リン酸、エチレンクリコー
ル、水電解質で、直流40Vで30分陽極酸化を行なう
Next, as shown in FIG. 1(b), anodic oxidation is performed using phosphoric acid, ethylene glycol, and water electrolyte at 40 V DC for 30 minutes.

次に第1図(c)の様に被覆ゴム3を除去して陽極酸化
を終了する。
Next, as shown in FIG. 1(c), the covering rubber 3 is removed to complete the anodic oxidation.

図中、2aは′Faの陽極酸化膜である。In the figure, 2a is an anodic oxide film of 'Fa.

上述の工程後、洗浄乾燥させ、対向電極としてAuを蒸
着しMIM素子を作成し評価したところ、良好なMIM
素子特性が得られた。
After the above steps, the MIM device was washed and dried, Au was deposited as a counter electrode, and evaluated.
Device characteristics were obtained.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明の製造方法によれば、金属表面
を陽極酸化する際、信号入出力端子等のため金属表面の
一部を陽極酸化されたくない部分がある場合、その部分
を弾性物質で被覆することにより被覆部を陽極酸化させ
ることなく選択的に陽極酸化できるという利点を有する
As described above, according to the manufacturing method of the present invention, when a metal surface is anodized, if there is a part of the metal surface that does not want to be anodized because it is a signal input/output terminal, etc., that part is covered with an elastic material. This coating has the advantage that selective anodic oxidation can be performed without anodizing the coated portion.

さらに本発明の製造方法によれは、従来のような陽極酸
化膜のエツチング工程やレジスト層の形成、剥離工程等
を施す必要がなく大巾に工程を簡略化でき、これに供な
うコストダウン、品質の安定性の向上、歩留りの向上な
どに多大の効果を有するものである。
Furthermore, the manufacturing method of the present invention does not require the conventional etching process of the anodic oxide film, the formation of a resist layer, the peeling process, etc., which greatly simplifies the process, thereby reducing costs. , which has great effects on improving quality stability and yield.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a〜Cは本発明の選択陽極酸化法の一実施例を説
明した工程図。 1・・・カラス基板 2・・・Ta金属膜 2a・・・Ta陽極酸化膜 3・・・ブチルゴム 以上 出願人 セイコーエプソン株式会社 一  4  −
FIGS. 1A to 1C are process diagrams illustrating an embodiment of the selective anodizing method of the present invention. 1... Glass substrate 2... Ta metal film 2a... Ta anodic oxide film 3... Butyl rubber Applicant: Seiko Epson Corporation 1 4 -

Claims (1)

【特許請求の範囲】 金属表面上に所定形状を有する弾性物質で被覆する工程
と、 前記弾性物質をマスクとして前記金属表面を陽極酸化す
る工程と からなることを特徴とする選択陽極酸化法。
Claims: A selective anodic oxidation method comprising the steps of: coating a metal surface with an elastic material having a predetermined shape; and anodizing the metal surface using the elastic material as a mask.
JP451388A 1988-01-12 1988-01-12 Selective anodic oxidation method Pending JPH01180998A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP451388A JPH01180998A (en) 1988-01-12 1988-01-12 Selective anodic oxidation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP451388A JPH01180998A (en) 1988-01-12 1988-01-12 Selective anodic oxidation method

Publications (1)

Publication Number Publication Date
JPH01180998A true JPH01180998A (en) 1989-07-18

Family

ID=11586136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP451388A Pending JPH01180998A (en) 1988-01-12 1988-01-12 Selective anodic oxidation method

Country Status (1)

Country Link
JP (1) JPH01180998A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109483A (en) * 1991-10-15 1993-04-30 Stanley Electric Co Ltd Double-sided luminescence el element and manufacture thereof
WO1998053499A1 (en) * 1997-05-20 1998-11-26 Micro Components Ltd. Substrate for electronic packaging, pin jig fixture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109483A (en) * 1991-10-15 1993-04-30 Stanley Electric Co Ltd Double-sided luminescence el element and manufacture thereof
WO1998053499A1 (en) * 1997-05-20 1998-11-26 Micro Components Ltd. Substrate for electronic packaging, pin jig fixture
US6448510B1 (en) 1997-05-20 2002-09-10 Micro Components Ltd. Substrate for electronic packaging, pin jig fixture

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