JPH0479217A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0479217A JPH0479217A JP19353990A JP19353990A JPH0479217A JP H0479217 A JPH0479217 A JP H0479217A JP 19353990 A JP19353990 A JP 19353990A JP 19353990 A JP19353990 A JP 19353990A JP H0479217 A JPH0479217 A JP H0479217A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- aluminum
- photoresist
- metal layer
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000007743 anodising Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000008151 electrolyte solution Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 10
- 150000004767 nitrides Chemical class 0.000 abstract description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 4
- 238000001312 dry etching Methods 0.000 abstract description 4
- 239000003792 electrolyte Substances 0.000 abstract description 4
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 229910052697 platinum Inorganic materials 0.000 abstract description 2
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910018949 PtAu Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003779 hair growth Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業 （７）１１１【
この発明は、半導体装置の製造方法に関し、特に電極形
成を高精度に加工しかつ外、１の不良を低減させる方法
に関する。Detailed Description of the Invention Industry (7) 111 [The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming electrodes with high accuracy and reducing the number of defects.
従来盆技丘
従来、この種の電極形成は、所望部以外に剥離性を良く
するため、ポジ型フォトレジストを形成しその後金属層
を形成、次にポジ型フォトレジスト上の金属層を除去し
ていた。Traditionally, this type of electrode formation involves forming a positive photoresist, then forming a metal layer, and then removing the metal layer on the positive photoresist in order to improve releasability in areas other than the desired areas. was.
また、パターンニング精度向上のためには、金属層形成
後所望部をフォトレジストでパターンニングし露出した
領域の金属層をドライエツチング法例えばイオンミリン
グで除去していた。Furthermore, in order to improve patterning accuracy, after forming the metal layer, desired portions are patterned with photoresist, and exposed areas of the metal layer are removed by dry etching, such as ion milling.
よ゛
ところで上記従来の方法においては、半導体基板上の金
属層とポジ型フォトレジスト上の金属層が段切れて絶縁
されているのが理想的であるが実際には連続しており、
ポジ型フォトレジスト上の金属層のみを除去するのは不
可能であった。However, in the conventional method described above, ideally the metal layer on the semiconductor substrate and the metal layer on the positive photoresist are separated and insulated, but in reality they are continuous.
It was not possible to remove only the metal layer on the positive photoresist.
また除去は機械的に綿棒等でおこなっていたため、所望
部の金属層に傷をつける。また、所望のパターン精度が
得られない等の欠点があった。Furthermore, since the removal was done mechanically with a cotton swab or the like, the metal layer in the desired area would be damaged. Further, there were drawbacks such as the inability to obtain desired pattern accuracy.
一方精度向上の方法としてドライエツチングを使用した
場合、マスキングとして使用しているフォトレジストが
固化し通常方法（ケミカルまたはプラズマエツチング）
では除去できずやはり機械的に除去する方法に頼らざる
を得なかったため外観上の不良が発生していた。On the other hand, when dry etching is used as a method to improve accuracy, the photoresist used as a mask solidifies and the conventional method (chemical or plasma etching)
However, since it could not be removed using mechanical methods, it was necessary to resort to mechanical removal, resulting in defects in appearance.
−、の
この発明の電極形成方法は、所望の金属層上にマスク層
としてアルミニウム層あるいは絶縁膜例えば窒化膜を形
成し、これを精度良くフォトレジストでパターンニング
し、不要部を開にしてアルミニウム層あるいは窒化膜を
露出させてその後電解液中で露出部分を陽極酸化しアル
ミニウムあるいは化成物質に変化させる。-, the electrode forming method of this invention involves forming an aluminum layer or an insulating film, such as a nitride film, as a mask layer on a desired metal layer, patterning this with precision with a photoresist, and opening unnecessary parts to form an aluminum layer. The layer or nitride film is exposed and then the exposed portion is anodized in an electrolyte to convert it to aluminum or a chemical compound.
次に、該アルミナあるいは化成化領域のみを除去しアル
ミニウム層あるいは窒化膜をマーキングとして金属層を
ドライエツチングし高精度にバタンニングを形成する。Next, only the alumina or chemically converted region is removed, and the metal layer is dry-etched using the aluminum layer or nitride film as a marking to form a highly accurate battening.
伍且
上記の構成によると半導体基板上の金属層を、精度良く
また設計通りに形成可能である。さらに外観においても
良好な電極の形成を提供できる。Furthermore, according to the above configuration, it is possible to form a metal layer on a semiconductor substrate with high precision and as designed. Furthermore, it is possible to provide electrode formation with good appearance.
災息桝 以下この発明について図面を参照して説明する。disaster area The present invention will be explained below with reference to the drawings.
第１図は、この発明の一実施例によって形成される半導
体装置の断面図である。図において１は半導体基板、２
は金属層（例えＴ＋ＰｔＡｕ） 、３は金属層２上に形
成されるマスク層としてのアルミニウム層、３°はマス
ク層を後述のとおり部分的に露出させて、陽極酸化させ
たアルミナ層、４はフォトレジストである。FIG. 1 is a sectional view of a semiconductor device formed according to an embodiment of the present invention. In the figure, 1 is a semiconductor substrate, 2
3 is a metal layer (e.g. T+PtAu), 3 is an aluminum layer as a mask layer formed on the metal layer 2, 3° is an alumina layer which is anodized with the mask layer partially exposed as described below, 4 is an anodic oxidized alumina layer. It is a photoresist.
第３図に示すように半導体基板１上に金属層例えばＴ、
、Ｐｔ、Ａｕを形成し、その上に第４図に示すようにマ
スク層であるアルミニウム層を約１μｍ形成する。As shown in FIG. 3, a metal layer such as T,
, Pt, and Au, and thereon, as shown in FIG. 4, an aluminum layer serving as a mask layer is formed to a thickness of about 1 μm.
しかるのち第５図に示すように、フォトレジストで所望
部をパターンニングする。その後第２図に示すように、
電解溶液（例えば１％硫酸）中で陽極化をおこないアル
ミニウム層３の露出部分をアルミナ３′にする。（第１
図）
しかるのちアルミナ層３′を例えば弗酸系溶液で除去し
、さらにドライエツチング法で該アルミニウム３及びフ
ォトレジスト４をマスキングとして金属層を除去する。Thereafter, as shown in FIG. 5, desired portions are patterned using photoresist. Then, as shown in Figure 2,
Anodization is performed in an electrolytic solution (for example, 1% sulfuric acid) to convert the exposed portion of the aluminum layer 3 into alumina 3'. (1st
(Figure) Thereafter, the alumina layer 3' is removed using, for example, a hydrofluoric acid solution, and then the metal layer is removed by dry etching using the aluminum 3 and photoresist 4 as a mask.
（第６図）
次にフォトレジスト４及びアルミニウム層３を除去し完
成するこの実施例によればＴ、 、Ｐｔ、Ａ、とアルミ
ニウム及びアルミナはエッチャント、弗酸化溶液に対し
エッチャントの選択比が大きくアルミナ）アルミニウム
〉ＴｌｌＰｔ１Ａｕでありパターンニング精度が向上す
る。(Fig. 6) Next, the photoresist 4 and the aluminum layer 3 are removed to complete the process. According to this example, T, , Pt, A, aluminum, and alumina have a high etchant selectivity with respect to the etchant and fluoride solution. Alumina) Aluminum>TllPt1Au, and patterning accuracy is improved.
さらにマスキングとして使用したフォトレジスト及びア
ルミニウムも除去が容易（０゜プラズマ及びリン酸系溶
液）であり外観も良好という利点がある。Furthermore, the photoresist and aluminum used as masking are easy to remove (0° plasma and phosphoric acid solution) and have a good appearance.
実ＪＬ４１−λ
第１図に示す半導体基板１上の金属層２の上にアルミニ
ウム層マスク層の代わりに絶縁物例えば窒化膜３ｘを形
成（１００ＯＡ程度）シ、シかるのち電解溶液例えばシ
ュウ酸溶液中で通常の印加電圧の数倍の電圧を印加して
陽極酸化をおこない、窒化膜を酸化膜に変化させる。Actual JL41-λ On the metal layer 2 on the semiconductor substrate 1 shown in Fig. 1, an insulator such as a nitride film 3x is formed instead of the aluminum layer mask layer (approximately 100 OA), and then an electrolytic solution such as an oxalic acid solution is formed. Inside, a voltage several times higher than the normal applied voltage is applied to perform anodic oxidation, changing the nitride film to an oxide film.
次に酸化膜を除去することにより実施例１と同様の方法
で、高精度でかつ外観の良好なパターンが得られる。Next, by removing the oxide film, a pattern with high precision and good appearance can be obtained in the same manner as in Example 1.
髪晩生立策
以上説明したように、この発明は形成した金属層上にア
ルミニウム層等の金属層または窒化膜等の絶縁層を形成
し電解溶液中で陽極酸化することによりパターンニング
精度及び外観品質向上が出来る効果がある。Strategies for slow hair growth As explained above, this invention improves patterning accuracy and appearance quality by forming a metal layer such as an aluminum layer or an insulating layer such as a nitride film on the formed metal layer and anodizing it in an electrolytic solution. It has the effect of improving.
第１図及び第３図〜第７図は、この発明の一実施例によ
って製造された半導体装置の断面図、第２図は、陽極酸
化電解溶液槽の断面図である。
１・・・・・・半導体基板、 ２・・・・・・金属槽、
３・・・・・・マスク層（アルミニウム疎）、３゛・・
・・・・アルミナ層、
３ｘ ・・・・・・マスク層（窒化膜）４・・・・・
・フォトレジスト、
５・・・・・・電解溶液、
６・・・・・・半導体基板（陽極側）1 and 3 to 7 are cross-sectional views of a semiconductor device manufactured according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of an anodizing electrolyte bath. 1... Semiconductor substrate, 2... Metal tank,
3...Mask layer (aluminum sparse), 3゛...
...Alumina layer, 3x ...Mask layer (nitride film) 4...
・Photoresist, 5... Electrolyte solution, 6... Semiconductor substrate (anode side)
Claims (2)
属層上にマスク層を形成する工程と、上記マスク層の所
望部分を絶縁物で被覆し所望部分以外のマスク層を露出
させる工程と、電解溶液中で上記マスク層の露出部分を
陽極酸化する工程と、 上記陽極酸化の後、陽極酸化部分を除去して上記金属層
を所望パターンに形成する工程とを含むことを特徴とす
る半導体装置の製造方法。(1) A step of forming a metal layer on a semiconductor substrate, a step of forming a mask layer on the metal layer, and a step of covering a desired portion of the mask layer with an insulator and exposing the mask layer other than the desired portion. and anodizing the exposed portion of the mask layer in an electrolytic solution; and after the anodizing, removing the anodized portion to form the metal layer in a desired pattern. A method for manufacturing a semiconductor device.
方法において、マスク層として、絶縁膜を用いることを
特徴とする半導体装置の製造方法。(2) A method for manufacturing a semiconductor device according to claim 1, characterized in that an insulating film is used as a mask layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19353990A JPH0479217A (en) | 1990-07-20 | 1990-07-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19353990A JPH0479217A (en) | 1990-07-20 | 1990-07-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0479217A true JPH0479217A (en) | 1992-03-12 |
Family
ID=16309759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19353990A Pending JPH0479217A (en) | 1990-07-20 | 1990-07-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0479217A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100236065B1 (en) * | 1996-12-17 | 1999-12-15 | Hyundai Micro Electronics Co | Hydrophilic method of semiconductor device |
-
1990
- 1990-07-20 JP JP19353990A patent/JPH0479217A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100236065B1 (en) * | 1996-12-17 | 1999-12-15 | Hyundai Micro Electronics Co | Hydrophilic method of semiconductor device |
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