JPH01152613A - Manufacture of tantalum thin film capacitor - Google Patents
Manufacture of tantalum thin film capacitorInfo
- Publication number
- JPH01152613A JPH01152613A JP62250524A JP25052487A JPH01152613A JP H01152613 A JPH01152613 A JP H01152613A JP 62250524 A JP62250524 A JP 62250524A JP 25052487 A JP25052487 A JP 25052487A JP H01152613 A JPH01152613 A JP H01152613A
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- pattern
- film
- photoresist
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 38
- 239000010409 thin film Substances 0.000 title claims abstract description 17
- 229910052715 tantalum Inorganic materials 0.000 title claims description 15
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010408 film Substances 0.000 claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 11
- 239000003929 acidic solution Substances 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 abstract description 12
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 9
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001120 nichrome Inorganic materials 0.000 abstract description 2
- 239000002253 acid Substances 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000007743 anodising Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は混成集積回路の製造方法に関し、特に高品質で
信頼性のあるタンタル薄膜コンデンサの製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing hybrid integrated circuits, and more particularly to a method for manufacturing high quality and reliable tantalum thin film capacitors.
従来のタンタル薄膜コンデンサの製造方法は、絶縁基板
上に生成したタンタル系薄膜を、所望のパターンにフォ
トレジスト及びエツチング処理で形成した後、該パター
ンのコンデンサとなるべき部分を酸性溶液中で一定電圧
で陽極酸化し、Ｔａ２Ｏ５膜に変換し、次に良導電性金
属からなる対向電極パターンを形成し、最終的に２５０
’Ｃの大気中で５時間の熱処理を施していた。The conventional manufacturing method for tantalum thin film capacitors involves forming a tantalum thin film on an insulating substrate into a desired pattern using photoresist and etching processes, and then subjecting the portion of the pattern that will become the capacitor to a constant voltage in an acidic solution. Anodic oxidation is performed to convert it into a Ta2O5 film, then a counter electrode pattern made of a highly conductive metal is formed, and finally a 250
Heat treatment was carried out for 5 hours in an atmosphere of 'C.
上述した従来の製造方法では、タンタル系薄膜を所望の
コンデンサパターンに形成した際、そのパターンの端役
差部が表面に比べ非常に粗くなり、酸性溶液中で陽極酸
化し、Ｔａ２Ｏ５膜に変換した場合、表面に対しそのＴ
ａ２Ｏｇ膜生成が不均一な状態であり、上層に最終的に
対向電極パターンを形成し、特に上部電極引出し部とＴ
ａ２Ｏ２膜段差部で耐圧低下が生じるという欠点があっ
た。In the conventional manufacturing method described above, when a tantalum-based thin film is formed into a desired capacitor pattern, the end portions of the pattern become extremely rough compared to the surface, and when it is anodized in an acidic solution and converted to a Ta2O5 film. , that T with respect to the surface
The a2Og film formation is in a non-uniform state, and a counter electrode pattern is finally formed on the upper layer, especially on the upper electrode lead part and T.
There was a drawback that the withstand voltage decreased at the step portion of the a2O2 film.
本発明の目的は、このような欠点を除き、耐圧低下を生
じることのないタンタル薄膜コンデンサの製造方法を提
供することにある。An object of the present invention is to provide a method for manufacturing a tantalum thin film capacitor that eliminates such drawbacks and does not cause a drop in breakdown voltage.
本発明のタンタル薄膜コンデンサの製造方法は、絶縁基
板上に生成したタンタル系薄膜とフォトレジスト処理に
より所望のコンデンサパターンを形成し、このコンデン
サパターン上のフォトレジストを剥離することなく、酸
性溶液中でコンデンサ膜とすべき指定電圧よりも少なく
とも５０Ｖ以上高い一定電圧で前記コンデンサパターン
の段差部を陽極酸化して、この段差部をＴａ２Ｏ５膜に
変換した後、前記コンデンサパターンのうちの所望のコ
ンデンサ部の上面を再度酸性溶液中で一定電圧で陽極酸
化してコンデンサ膜を形成することを特徴とする。The method for manufacturing a tantalum thin film capacitor of the present invention involves forming a desired capacitor pattern by processing a tantalum thin film formed on an insulating substrate and a photoresist, and then placing the capacitor in an acidic solution without peeling off the photoresist on the capacitor pattern. After converting the stepped portion of the capacitor pattern into a Ta2O5 film by anodizing the stepped portion of the capacitor pattern with a constant voltage that is at least 50 V higher than the specified voltage for forming the capacitor film, the desired capacitor portion of the capacitor pattern is anodized. The capacitor film is formed by anodizing the upper surface again in an acidic solution at a constant voltage.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図（ａ）〜（ｅ）は本発明の一実施例を工程順に説
明する断面図である。セラミック又はガラス等の絶縁基
板１にマグネトロンスパッタによりα−Ｔａ薄膜２を生
成しく第１図（ａ）） 、その基板１上にポジ型フォト
レジスト３を約１４μｍの厚さに塗布し、公知の写真製
版法により所望のコンデンサパターンを形成し、露出α
−Ｔａ面をドライエツチング処理で除去する（第１図（
ｂ））。次に、その基板１の上のレジストを剥離するこ
となく、０．０２％クエン酸溶液中に浸漬し、コンデン
サパターン境界面を２Ｏ０Ｖで２時間の陽極酸化を施し
、Ｔａ２Ｏ５膜４に変換した後、公知の剥離方法でフォ
トレジストを除去する（第１図（ｃ））、次に、その基
板１の上に再度ポジ型フォトレジストを１０μｍの厚さ
に塗布し、公知のフォトレジスト処理により、コンデン
サとすべきパターン部のみ露出したフォトレジストパタ
ーンを形成し、０．０１％クエン酸溶液中に再度浸漬し
、指定容量値を得るべく算出された電圧で２時間の陽極
酸化を施し、Ｔａ２Ｏｇ膜４′に変換した後、基板上の
フォトレジストパターンを公知の剥離方法で除去する（
第１図（ｄ））、次に、対向電極用金属層としてＮ ｉ
Ｃｒ ／ Ｐ ｄ ／ Ａ ｕ構成膜５をマグネトロ
ンスパッタで付着せしめ、公知のフォトレジスト及びエ
ツチング処理で所望の対向電極パターンを形成しく第１
図（ｅ））、最後に１５０℃大気中で５時間の熱処理を
施し、タンタル薄膜コンデンサを完成する。FIGS. 1(a) to 1(e) are cross-sectional views illustrating an embodiment of the present invention in the order of steps. An α-Ta thin film 2 is formed on an insulating substrate 1 made of ceramic or glass by magnetron sputtering (Fig. 1(a)), a positive photoresist 3 is applied to a thickness of about 14 μm on the substrate 1, and a well-known method is applied. Form the desired capacitor pattern by photolithography and expose α
-Remove the Ta surface by dry etching (Fig. 1 (
b)). Next, the resist on the substrate 1 is immersed in a 0.02% citric acid solution without peeling, and the capacitor pattern boundary surface is anodized at 2O0V for 2 hours to convert it into a Ta2O5 film 4. The photoresist is removed by a known peeling method (FIG. 1(c)). Next, a positive photoresist is applied again to a thickness of 10 μm on the substrate 1, and a known photoresist process is performed. A photoresist pattern was formed in which only the pattern part that was to be used as a capacitor was exposed, and then immersed again in a 0.01% citric acid solution, anodized for 2 hours at a voltage calculated to obtain the specified capacitance value, and then formed into a Ta2Og film. 4', the photoresist pattern on the substrate is removed by a known peeling method (
FIG. 1(d)), then Ni was used as a metal layer for the counter electrode.
A Cr/Pd/Au composition film 5 is deposited by magnetron sputtering, and a desired counter electrode pattern is formed by a known photoresist and etching process.
As shown in Figure (e), a final heat treatment is performed in the atmosphere at 150°C for 5 hours to complete the tantalum thin film capacitor.
以上説明したように本発明は、タンタル薄膜コンデンサ
のコンデンサパターン境界部をコンデンサ化成電圧より
も高電圧で化成することにより、Ｔａ２Ｏ５膜厚を厚く
することで耐圧低下要因となっていた上部電極引き出し
部がかかるＴ ａ ２Ｏ２膜段差部の構造が改善され、
安定した高品質のタンタル薄膜コンデンサの製造が可能
となる。As explained above, the present invention is capable of forming the capacitor pattern boundary of a tantalum thin film capacitor at a higher voltage than the capacitor forming voltage, thereby increasing the thickness of the Ta2O5 film, and thereby increasing the thickness of the upper electrode extension part, which was a cause of a decrease in breakdown voltage. The structure of the stepped portion of the T a 2O2 film is improved,
It becomes possible to manufacture stable, high-quality tantalum thin film capacitors.
第１図（ａ）〜（ｅ）は本発明の一実施例を工程順に説
明するタンタル薄膜コンデンサの断面図である。
１・・・絶縁基板、２・・・αタンタル薄膜、３・・・
ポジ型フォトレジスト、４・・・第１Ｔａ２Ｏ５膜、４
′・・・第２Ｔａ２Ｏ５膜、５ ・−・Ｎ ｉ Ｃｒ
／ Ｐ ｄ ／ Ａ ｕ構成膜。FIGS. 1(a) to 1(e) are cross-sectional views of a tantalum thin film capacitor illustrating an embodiment of the present invention in the order of steps. 1... Insulating substrate, 2... α tantalum thin film, 3...
Positive photoresist, 4...first Ta2O5 film, 4
'...Second Ta2O5 film, 5...NiCr
/ P d / A u composition film.
Claims (1)
ト処理により所望のコンデンサパターンを形成し、この
コンデンサパターン上のフォトレジストを剥離すること
なく、酸性溶液中でコンデンサ膜とすべき指定電圧より
も少なくとも５０Ｖ以上高い一定電圧で前記コンデンサ
パターンの段差部を陽極酸化して、この段差部をＴａ＿
２Ｏ＿５膜に変換した後、前記コンデンサパターンのう
ちの所望のコンデンサ部の上面を再度酸性溶液中で一定
電圧で陽極酸化してコンデンサ膜を形成することを特徴
とするタンタル薄膜コンデンサの製造方法。A desired capacitor pattern is formed by a tantalum-based thin film formed on an insulating substrate and photoresist treatment, and the voltage is at least 50 V higher than the specified voltage to be used as a capacitor film in an acidic solution without peeling off the photoresist on this capacitor pattern. The stepped portion of the capacitor pattern is anodized using a constant voltage higher than that, and the stepped portion is Ta_
A method for manufacturing a tantalum thin film capacitor, characterized in that after converting into a 2O_5 film, the upper surface of a desired capacitor part of the capacitor pattern is again anodized in an acidic solution at a constant voltage to form a capacitor film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62250524A JPH01152613A (en) | 1987-10-02 | 1987-10-02 | Manufacture of tantalum thin film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62250524A JPH01152613A (en) | 1987-10-02 | 1987-10-02 | Manufacture of tantalum thin film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01152613A true JPH01152613A (en) | 1989-06-15 |
Family
ID=17209173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62250524A Pending JPH01152613A (en) | 1987-10-02 | 1987-10-02 | Manufacture of tantalum thin film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01152613A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5545398A (en) * | 1993-01-13 | 1996-08-13 | Perricone; Nicholos V. | Method and compositions for topical application to the skin of tocotrienol for prevention and/or treatment of skin damage |
| US5554647A (en) * | 1989-10-12 | 1996-09-10 | Perricone; Nicholas V. | Method and compositions for treatment and/or prevention of skin damage and aging |
| US5574063A (en) * | 1989-10-12 | 1996-11-12 | Perricone; Nicholas V. | Method and compositions for topical application of ascorbic acid fatty acid esters for treatment and/or prevention of skin damage |
-
1987
- 1987-10-02 JP JP62250524A patent/JPH01152613A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5554647A (en) * | 1989-10-12 | 1996-09-10 | Perricone; Nicholas V. | Method and compositions for treatment and/or prevention of skin damage and aging |
| US5574063A (en) * | 1989-10-12 | 1996-11-12 | Perricone; Nicholas V. | Method and compositions for topical application of ascorbic acid fatty acid esters for treatment and/or prevention of skin damage |
| US5545398A (en) * | 1993-01-13 | 1996-08-13 | Perricone; Nicholos V. | Method and compositions for topical application to the skin of tocotrienol for prevention and/or treatment of skin damage |
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