JPS60762A - Manufacture of hybrid integrated circuit - Google Patents

Abstract

PURPOSE:To reduce the number of the processes for anodic formation to a single process by a method wherein, after the selective anodic formation of a Ta thin film formed on an insulation substrate, a Ta series film is adhered over the entire surface, and further a Ta nitride series film and an electrode conductor are attached and then pattern-formed into a desired shape. CONSTITUTION:First, the Ta thin film 2 is adhered on the ceramic substrate 1 by sputtering. Next, the thin film 2 in a fixed region is pattern-formed by photoetching, and a part of the thin film 2 is selectively anodically formed, resulting in conversion into a dielectric layer 3a. Further, a dichromium film 6 is adhesion-formed over the entire surfaces of the above mentioned by vapor deposition or sputtering. Thereafter, the Ta niride thin film 4 is adhered by sputtering, and then the electrode conductor 5 is adhesion-formed. Accordingly, this structure is pattern-formed into the desired shape.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for manufacturing a hybrid integrated circuit, which is particularly reliable and
The present invention also relates to a method of manufacturing a tantalum thin film CR substrate, which is a simplified manufacturing method.

FIGS. 4(a) to 4(h) show a conventional method for manufacturing a hybrid integrated circuit. First, as shown in FIG. 1(a), a tantalum thin film 2 of about 4000 to 5000
Deposit by sputtering to a thickness of λ. Furthermore, as shown in FIG. 2B, a pattern is formed on the tantalum thin film 2 in a predetermined area by a known photoetching technique. Next, a part of the tantalum thin film 2 is selectively anodized, as shown in the figure (
Convert to dielectric layer 3 as shown in C), and then convert to dielectric layer 3 as shown in (d).
), a tantalum nitride thin film 4 is deposited on the entire surface by sputtering to a thickness of about 800 to 1000 Å. Furthermore, as shown in the same figure (e), a tantalum nitride thin film 4
Etching is performed to leave a predetermined area of a portion of the area. Thereafter, the dielectric layer 3 is anodized again to convert it into a dielectric layer 3a as shown in FIG. 3(f). Furthermore, as shown in the same figure (g), an electrode conductor 5f: is deposited and formed on the entire surface of the structure, and as shown in the same figure (g).
This is patterned into a desired shape as in h).

In the conventional example, two anodization steps are included. First, the purpose of the second anodization (f in the same figure) is, needless to say, to obtain a dielectric layer with a capacitance value based on the circuit design. The purpose of the first anodization (C in the same figure) is to form a galvanic resting layer 3 which serves as a stop layer when selectively etching the tantalum nitride film 4. In addition, if the dielectric layer 3a is directly formed in the first adjacent chemical formation, defects will occur on the surface of the dielectric layer 3a due to thermal effects during the tantalum nitride thin film sputtering process in the next step, which will eventually lead to capacitor short-circuiting and breakdown voltage deterioration. This leads to the occurrence of defects. Therefore, by performing anodization again after forming tantalum nitride, the above defects are repaired.

An object of the present invention is to provide a manufacturing method that simplifies such complicated steps and can easily manufacture a hybrid integrated circuit having an accuracy equal to or higher than that described above.

Next, the present invention will be explained with reference to Examples.

FIGS. 2(a) to 2h) are cross-sectional views showing the steps of an embodiment of the present invention. First, as shown in FIG.
Deposited by sputtering to a thickness of 00A. Next, as shown in FIG. 4(b), the tantalum thin film 2 in a predetermined area is patterned by a known photoetching technique.

Next, a part of the tantalum thin film 2 is selectively anodized, and a second
As shown in Figure (C), it is converted into a dielectric layer 3a, and then, as shown in Figure (d), a metal film different from the tantalum film, such as a nichrome film 6, is applied by vapor deposition or sputtering. Forms adhesion. Thereafter, a tantalum nitride thin film 4 is deposited by sputtering. Next, as shown in FIG. 4(e), an electrode conductor 5 is deposited and formed.

Further, patterns are sequentially formed into desired shapes in the order of (f), (g-1, and (h)) in the figure.

According to Kinenyu f, the anodization process is only one step, and
By adhering nichrome, which is a good conductor and has excellent adhesion to tangel, on the surface of the dielectric layer, it acts as a buffer that alleviates the damage caused by sputtering of tantalum nitride 4, so as to prevent defects as explained above. There have been no outbreaks.

[Brief explanation of the drawing]

1(a) to h) are cross-sectional views of a tantalum thin film CR and a substrate in the order of 8 steps for explaining a conventional method for manufacturing a hybrid integrated circuit; FIG. FIG. 3 is a cross-sectional view of the thin film CR substrate in the order of manufacturing steps. 1... Ceramic substrate, 2... Dantal thin film, 3.3a... Dielectric layer, 4...
・Tantalum nitride thin film, Fig. 1 Fig. 2

Claims (1)

[Claims] A step of forming a tantalum thin film on an insulating substrate, a step of selectively anodizing a predetermined region of the tantalum thin film, a step of attaching a tantalum-based film to the entire surface, and further adhering a tantalum nitride thin film and an electrode conductor. 1. A method of manufacturing a hybrid integrated circuit, the method comprising: step of patterning the structure in sequence into a desired shape.