KR970015788A - Metal layer formation method - Google Patents

Metal layer formation method Download PDF

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Publication number
KR970015788A
KR970015788A KR1019950033528A KR19950033528A KR970015788A KR 970015788 A KR970015788 A KR 970015788A KR 1019950033528 A KR1019950033528 A KR 1019950033528A KR 19950033528 A KR19950033528 A KR 19950033528A KR 970015788 A KR970015788 A KR 970015788A
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South Korea
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layer
seed layer
seed
metal
forming
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KR1019950033528A
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Korean (ko)
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KR0171137B1 (en
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최재영
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배순훈
대우전자 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

본 발명은 전기 도금 공정에 의하여 시드층상에 형성된 메탈층을 손상시킴이 없이 형성시키기 위한 방법에 관한 것으로 기판상의 제 1절연층상에 소정 두께의 시드층을 형성시키는 제 1단계와, 상기 시드층상에 감광층을 형성시키고 패터닝시키는 제 2단계와, 상기 감광층의 패턴을 통하여 노출된 상기 시드층상에 전기 도금 공정에 의하여 메탈층을 형성시키는 제 3단계와, 상기 메탈층상에 제 2절연층을 형성시키는 제 4단계와, 상기 감광층을 제거하여 상기 시드층의 일부를 노출시키는 제 5단계와, 상기 노출된 시드층의 일부를 제거하는 제 6단계와, 그리고 상기 메탈층상에 형성된 상기 제 2절연층을 제거하는 제 7단계로 이루어지며 이에 의해서 상기 메탈층의 패턴 치수 및 형상을 원하는 형태로 유지시킬 수 있다.The present invention relates to a method for forming a metal layer formed on a seed layer without damage by an electroplating process, the method comprising: forming a seed layer having a predetermined thickness on a first insulating layer on a substrate; A second step of forming and patterning a photosensitive layer, a third step of forming a metal layer by an electroplating process on the seed layer exposed through the pattern of the photosensitive layer, and a second insulating layer formed on the metal layer A fourth step of exposing the portion of the seed layer by removing the photosensitive layer, a sixth step of removing a portion of the exposed seed layer, and the second insulation formed on the metal layer The seventh step of removing the layer, thereby maintaining the pattern dimensions and shape of the metal layer in a desired form.

Description

메탈층 형성 방법Metal layer formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2도 (가) 내지 (마)는 본 발명에 따른 메탈층 형성 방법을 순차적으로 도시한 공정도,2 (a) to (e) is a process diagram sequentially showing a metal layer forming method according to the present invention,

제 3도는 본 발명의 다른 실시예에 따른 메탈층 형성 방법을 도시한 단면도.3 is a cross-sectional view showing a metal layer forming method according to another embodiment of the present invention.

Claims (13)

실리콘 기판(21)상의 제 1절연층(26)상에 소정 두께의 시드층(22)을 형성시키는 제 1단계와, 상기 시드층(22)상에 감광층(23)을 형성시키고 패터닝시키는 제 2단계와, 상기 감광층(23)의 패턴을 통하여 노출된 상기 시드층(22)상에 전기 도금 공정(electroplating)에 의하여 메탈층(24)을 형성시키는 제 3단계와, 상기 메탈층(24)상에 제 2절연층(25)을 형성시키는 제 4단계와, 상기 감광층(23)을 제거하여 상기 시드층(22)의 일부를 노출시키는 제 5단계와, 상기 노출된 시드층(22)의 일부를 제거하는 제 6단계와, 그리고 상기 메탈층(24)상에 형성된 상기 제 2절연층(25)을 제거하는 제 7단계로 이루어진 것을 특징으로 하는 메탈층 형성 방법.A first step of forming a seed layer 22 having a predetermined thickness on the first insulating layer 26 on the silicon substrate 21, and a method of forming and patterning the photosensitive layer 23 on the seed layer 22. A second step of forming a metal layer 24 by electroplating on the seed layer 22 exposed through the pattern of the photosensitive layer 23, and the metal layer 24. A fourth step of forming a second insulating layer 25 on the second layer, a fifth step of removing the photosensitive layer 23 to expose a part of the seed layer 22, and the exposed seed layer 22. And a seventh step of removing a portion of the second layer) and a seventh step of removing the second insulating layer (25) formed on the metal layer (24). 제 1항에 있어서, 상기 제 1절연층(26)은 실리콘 질화물 또는 티티늄 질화물로 이루어져 있는 것을 특징으로 하는 메탈층 형성 방법.The method of claim 1, wherein the first insulating layer (26) is made of silicon nitride or titanium nitride. 제 2항에 있어서, 상기 시드층(22)은 도전성 금속으로 이루어진 단일층으로 구성되는 것을 특징으로 하는 메탈층 형성 방법.3. The method of claim 2, wherein said seed layer (22) is comprised of a single layer of conductive metal. 제 1항에 있어서, 상기 제 1절연층(36)은 실리콘 산화물로 이루어진 것을 특징으로 하는 메탈층 형성 방법.The method of claim 1, wherein the first insulating layer (36) is made of silicon oxide. 제 4항에 있어서, 상기 시드층은 크롬 또는 티타늄으로 이루어진 제 1시드층(32) 및 도전성 금속으로 이루어진 제 2시드층(33)으로 구성된 것을 특징으로 하는 메탈층 형성 방법.5. The method of claim 4, wherein the seed layer comprises a first seed layer (32) of chromium or titanium and a second seed layer (33) of conductive metal. 제 3항 또는 제 5항에 있어서, 상기 도전성 금속은 금으로 이루어진 것을 특징으로 하는 메탈층 형성 방법.The method of claim 3 or 5, wherein the conductive metal is made of gold. 제 1항에 있어서, 상기 메탈층(24)상에는 알루미늄을 증착시키는 것을 특징으로 하는 메탈층 형성 방법.The method of claim 1, wherein aluminum is deposited on the metal layer (24). 제 7항에 있어서, 상기 제 2절연층(25)은 상기 메탈층(24)상에 증착된 알루미늄을 양극 산화 공정에 의하여 산화시킴으로서 형성되는 것을 특징으로 하는 메탈층 형성 방법.8. The method of claim 7, wherein the second insulating layer (25) is formed by oxidizing aluminum deposited on the metal layer (24) by an anodizing process. 제 8항에 있어서, 상기 양극 산화 공정은 암모늄 주석산염 또는 암모늄 구연산염으로 이루어진 전해액에서 수행되는 것을 특징으로 하는 메탈층 형성 방법.10. The method of claim 8, wherein the anodic oxidation process is performed in an electrolyte consisting of ammonium stannate or ammonium citrate. 제 7항에 있어서, 상기 알루미늄은 전기 도금 공정에 의하여 상기 메탈층(24)상에 증착되는 것을 특징으로 하는 메탈층 형성 방법.8. The method of claim 7, wherein the aluminum is deposited on the metal layer (24) by an electroplating process. 제 1항에 있어서, 상기 시드층(22)은 염소 플라즈마를 사용한 반응성 이온 식각공정에 의하여 제거되는 것을 특징으로 하는 메탈층 형성 방법.The method of claim 1, wherein the seed layer (22) is removed by a reactive ion etching process using chlorine plasma. 제 1항에 있어서, 상기 제 2절연층(25)은 습식 식각 공정에 의하여 제거되는 것을 특징으로 하는 메탈층 형성 방법.The method of claim 1, wherein the second insulating layer (25) is removed by a wet etching process. 제 12항에 있어서, 상기 습식 식각 공정은 HF 용액 및 HNO3용액을 함유하는 에칭용액의 식각 작용에 의하여 상기 알루미나를 식각시킴으로써 수행되는 것을 특징으로 하는 메탈층 형성 방법.The method of claim 12, wherein the wet etching process is performed by etching the alumina by etching of an etching solution containing an HF solution and an HNO 3 solution. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950033528A 1995-09-30 1995-09-30 Method for fabricating a metallic layer KR0171137B1 (en)

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KR1019950033528A KR0171137B1 (en) 1995-09-30 1995-09-30 Method for fabricating a metallic layer

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KR0171137B1 KR0171137B1 (en) 1999-02-18

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101220416B1 (en) * 2010-08-26 2013-01-10 전남대학교산학협력단 Method for manufacturing super water-repellent polymer film

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6361675B1 (en) * 1999-12-01 2002-03-26 Motorola, Inc. Method of manufacturing a semiconductor component and plating tool therefor
KR102347793B1 (en) * 2015-01-12 2022-01-06 주식회사 아모센스 Method for manufacturing Touch Screen Pannel and Touch Screen Pannel manufactured by the method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101220416B1 (en) * 2010-08-26 2013-01-10 전남대학교산학협력단 Method for manufacturing super water-repellent polymer film

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