JPH03211834A - Formation of wiring pattern - Google Patents

Abstract

PURPOSE:To form a wiring pattern of fine area on an insulating substrate by etching a metal film in the thickness direction by using an anodized coating film as a mask. CONSTITUTION:A coating film 3 of the part which is not covered with resist 4 is etched in the film thickness direction; the coating film 3 is dipped in electrolyte; a part of the coating film 3 is subjected to anodic oxidation, which progresses from the end portion side of the coating film 3 toward the direction perpendicular to the film thickness. Hence by previously setting the time of anodic oxidation, an anodic oxidation part 3a of fine area can be formed on the end portion of the coating film 3. After the resist 4 is eliminated, the coating film 3 is etched in the film thickness direction, and the anodic oxidation part 3a only is left. Finally, a metal film 2 is etched in the film thickness direction by using the anodic oxidation part 3a of the coating film 3 as a mask, and a wiring pattern of fine area is formed on an insulating substrate 1. Thereby the wiring pattern whose area is smaller than that of a wiring pattern formed by a photolithography method can be formed on the insulating substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming wiring patterns used in semiconductor manufacturing processes such as LSIs and thin film devices.

[Conventional technology]

Conventionally, a photolithography method is used when forming a wiring pattern on an insulating substrate such as glass. In this photolithography method, a resist material is layered on a metal film formed on an insulating substrate by vapor deposition or sputtering method, this resist material is exposed to light using a mask with a predetermined pattern, and then developed. This method forms a wiring pattern on a substrate by etching a metal film in the film thickness direction.

[Problem to be solved by the invention]

However, since the photolithography method described above has limitations in resist resolution and etching technology, it has been difficult to form a wiring pattern with a minute area on an insulating substrate.

The present invention has been made in view of the above circumstances, and its object is to provide a method for forming a wiring pattern that can form a wiring pattern with a minute area on an insulating substrate.

[Means to solve the problem]

In order to solve the above problems, a method for forming a wiring pattern according to the present invention includes a step of forming a metal film for forming a wiring pattern on an insulating substrate, and a coating made of a metal different from the metal film on the metal film. , a step of laminating a mask material on the film, a step of etching the part of the film not covered with the mask material in the film thickness direction, and after this step, a part of the film is removed. a step of anodizing, a step of etching the non-anodized film in the thickness direction after this step, and a step of etching the metal film in the thickness direction using the anodized film as a mask after this step. It is equipped with the following.

[For production]

That is, in the present invention, since the metal film is etched in the film thickness direction using the anodized film as a mask, a wiring pattern with a minute area can be formed on the insulating substrate.

〔Example〕

Hereinafter, one embodiment of the present invention will be described with reference to FIGS. 1a to 1h.

1a to 1h, reference numeral 1 denotes an insulating substrate made of glass or the like. When forming a wiring pattern with a minute area on this insulating substrate 1, first place the insulating substrate 1 on the insulating substrate 1 as shown in FIG. 1a. Then, a metal film 2 for forming a wiring pattern made of chromium or the like is formed by a method such as vapor deposition or sputtering.

Next, as shown in FIG. 1b, a coating 3 made of a metal different from the metal film 2 (for example, aluminum) is formed on the metal film 2 by a method such as vapor deposition or sputtering.

Next, as shown in FIG. 1C, after laminating a resist 4 as a mask material on the coating 3, the coating 83 in the portion not covered with the resist 4 is removed in the film thickness direction as shown by the broken line in FIG. 1D. Etching. After etching, the coating 3 is immersed in an electrolytic solution, and a portion of the coating 3 is anodized. At this time,
Anodic oxidation proceeds from the end side of the coating 3 in a direction perpendicular to the film thickness direction. Therefore, by predetermining the anodic oxidation time, it is possible to form an anodized portion 3a with a minute area at the end of the coating 3, as shown in FIG. 1e.

Next, after removing the resist 4, the part of the coating 3 that has not been anodized is etched in the film thickness direction as shown by the broken line in FIG. Leave only 3a.

Note that, at this time, since the metal film 2 is made of a metal different from that of the coating 3 (for example, chromium, etc.), it is not etched together with the coating 3.

Thereafter, as shown in FIG. 1g, the anodized portion 3a of the coating 3 is
The metal film 2 is etched in the film thickness direction using as a mask.

After etching, the anodized portion 3a is etched as shown by the broken line in FIG. 1g, thereby etching the insulating substrate 1.
A wiring pattern with a minute area can be formed thereon.

Note that since the metal film 2 is made of a different metal from the coating 3, it is also different from the anodized portion 3a. Therefore, the metal film 2 is not etched together with the anodized portion 3a.

Therefore, in the above embodiment, since the metal film 2 is etched in the film thickness direction using the anodized film, that is, the anodized portion 3a as a mask, a wiring pattern having a smaller area than that formed by photolithography is insulated. It can be formed on the substrate 1.

In the above embodiment, the resist 4 was used as the mask material laminated on the coating 3, but it is also possible to use a mask material other than resist. Further, it goes without saying that various modifications can be made without departing from the gist of the present invention.

〔Effect of the invention〕

As explained above, the present invention includes a step of forming a metal film for forming a wiring pattern on an insulating substrate, a step of forming a film made of a metal different from the metal film on the metal film, and a step of forming a film made of a metal different from the metal film on the metal film. a step of laminating a mask material thereon, a step of etching the portion of the film not covered with the mask material in the film thickness direction, a step of anodizing a part of the film after this step, and this step. This method comprises a step of etching the unanodized film in the film thickness direction after this step, and a step of etching the metal film in the film thickness direction using the anodic oxidized film as a mask after this step. Therefore, a wiring pattern with an even smaller area can be formed on the insulating substrate than a wiring pattern formed by photolithography.

[Brief explanation of drawings]

FIGS. 1a to 1h are process diagrams for forming a wiring pattern showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Insulating substrate, 2... Metal film, 3... Coating, 3
a...Anodized part, 4...Resist.

Claims (1)

[Claims] A step of forming a metal film for forming a wiring pattern on an insulating substrate, a step of forming a film made of a metal different from the metal film on the metal film, and a step of laminating a mask material on the film. , a step of etching the portion of the film not covered with the mask material in the film thickness direction, a step of anodizing a part of the film after this step, and a step of removing the unanodized film after this step. A method for forming a wiring pattern, comprising the steps of etching in the thickness direction, and after this step, etching the metal film in the thickness direction using an anodized film as a mask.