JPH0277110A - Solid electrolytic capacitor - Google Patents
Solid electrolytic capacitorInfo
- Publication number
- JPH0277110A JPH0277110A JP22922388A JP22922388A JPH0277110A JP H0277110 A JPH0277110 A JP H0277110A JP 22922388 A JP22922388 A JP 22922388A JP 22922388 A JP22922388 A JP 22922388A JP H0277110 A JPH0277110 A JP H0277110A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dielectric oxide
- coating film
- insulating resin
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 29
- 239000007787 solid Substances 0.000 title claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 34
- 239000011347 resin Substances 0.000 claims abstract description 24
- 229920005989 resin Polymers 0.000 claims abstract description 24
- 239000010409 thin film Substances 0.000 claims abstract description 22
- 150000002391 heterocyclic compounds Chemical class 0.000 claims abstract description 15
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 11
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052709 silver Inorganic materials 0.000 abstract description 12
- 239000004332 silver Substances 0.000 abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 7
- 229910002804 graphite Inorganic materials 0.000 abstract description 7
- 239000010439 graphite Substances 0.000 abstract description 7
- 230000002950 deficient Effects 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 7
- 238000000576 coating method Methods 0.000 abstract 7
- 238000000034 method Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 239000007784 solid electrolyte Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical class CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- -1 virol Chemical class 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はビロール、フラン、チオフェン等の複素環式化
合物の有機半導体を電解質とする固体電解コンデンサに
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solid electrolytic capacitor using an organic semiconductor of a heterocyclic compound such as virol, furan, or thiophene as an electrolyte.
従来固体電解コンデンサには、二酸化マンガン（ＭｎＯ
□）やＴＣＮＱ塩等を固体電解質としたものがあるが、
この二酸化マンガン（Ｍ ｎ Ｏ＊ ）やＴＣＮＱ塩等
を固体電解質とする固体電解コンデンサはその製造方法
等に難点があった。そこで本出願人は製造方法が容易で
コンデンサ特性の優れた複素環式化合物のポリマー層を
固体寛解質とする新しい固体電解コンデンサを開発して
いる（例えば特開昭６１−２３１５号公報、特開昭６０
−２４４０１７号公報、特願昭６２−７３７４１号等）
。この固体電解コンデンサはアルミニウム等の誘電体酸
化皮膜を形成される基体の表面に、誘電体酸化皮膜層、
複素環式化合物の導電性ポリマー層、グラファイト層、
銀ペースト層を順次形成し、前記基体を一方の電極、銀
ペースト層を他方の電極としたものである。Conventional solid electrolytic capacitors contain manganese dioxide (MnO
□), TCNQ salt, etc. are used as solid electrolytes,
This solid electrolytic capacitor using manganese dioxide (MnO*), TCNQ salt, or the like as a solid electrolyte has some drawbacks in its manufacturing method. Therefore, the present applicant has developed a new solid electrolytic capacitor using a polymer layer of a heterocyclic compound as a solid electrolyte, which is easy to manufacture and has excellent capacitor properties (for example, Japanese Patent Laid-Open No. 61-2315, 1986
-244017, Japanese Patent Application No. 1983-73741, etc.)
. This solid electrolytic capacitor has a dielectric oxide film layer, a dielectric oxide film layer, etc.
Conductive polymer layer of heterocyclic compound, graphite layer,
Silver paste layers are sequentially formed, and the base is used as one electrode and the silver paste layer is used as the other electrode.
上記従来の複素環式化合物のポリマー層を電解質とする
固体電解コンデンサは、等個直列抵抗（ＥＳＲ）が小さ
い等積々のコンデンサ特性において優れたものではある
が、コンデンサ基体表面に形成された誘電体酸化皮膜に
欠陥部があると、この欠陥部を通して漏れ電流が流れ、
コンデンサの漏洩電流が増大するという問題がある。そ
こで前記誘電体酸化皮膜層、複素環式化合物の導電性ポ
リマー層、ダニファイト層及び銀ペースト層を順次形成
して、コンデンサ素子を形成した後、酸素雰囲気中でエ
ージングする等の特殊な工程を加えることにより、この
漏洩電流を減少をさせるた方法も開発されている。しか
しながら、完成はたコンデンサ素子にこの特殊な工程を
加えなければならないという問題があった。The conventional solid electrolytic capacitors using a polymer layer of a heterocyclic compound as an electrolyte have excellent capacitor characteristics with low equal series resistance (ESR). If there is a defect in the body oxide film, leakage current will flow through this defect.
There is a problem in that the leakage current of the capacitor increases. Therefore, after forming a capacitor element by sequentially forming the dielectric oxide film layer, the conductive polymer layer of a heterocyclic compound, the mite phyte layer, and the silver paste layer, a special process such as aging in an oxygen atmosphere is performed. A method for reducing this leakage current has also been developed. However, there was a problem in that this special process had to be added to the completed capacitor element.
本発明は上述の点に鑑みてなされたもので上記問題点を
除去し、特殊工程を加えることなく、漏洩電流の極めて
少ない複素環式化合物の導電性ポリマー層を電解質とす
る固体電解コンデンサを提供することにある。The present invention has been made in view of the above points, and provides a solid electrolytic capacitor that eliminates the above problems and uses a conductive polymer layer of a heterocyclic compound with extremely low leakage current as an electrolyte without adding any special process. It's about doing.
上記課題を解決するため本発明は、固体電解コンデンサ
を誘電体酸化皮膜を形成できる金属基体の表面に誘電体
酸化皮膜を形成した後、該誘電体酸化皮膜層上に絶縁性
樹脂薄膜層を形成し、該絶縁性樹脂薄膜層上に複素環式
化合物の導電性ポリマー層、導電体層を順次形成し、該
導電体層を一方の電極とし、金属基体を他方の電極とし
たことを特徴とする。In order to solve the above problems, the present invention provides a solid electrolytic capacitor by forming a dielectric oxide film on the surface of a metal substrate on which a dielectric oxide film can be formed, and then forming an insulating resin thin film layer on the dielectric oxide film layer. A conductive polymer layer made of a heterocyclic compound and a conductor layer are sequentially formed on the insulating resin thin film layer, the conductor layer is used as one electrode, and the metal substrate is used as the other electrode. do.
上記の如く誘電体酸化皮膜層上に絶縁性樹脂薄膜層を形
成するので、誘電体酸化皮膜層の絶縁欠陥部がこの絶縁
性樹脂薄膜層で補修されたことになり、漏洩電流の極め
て小さい固体電解コンデンサとなる。Since the insulating resin thin film layer is formed on the dielectric oxide film layer as described above, the insulation defects in the dielectric oxide film layer are repaired by this insulating resin thin film layer, making it a solid material with extremely low leakage current. Becomes an electrolytic capacitor.
以下、本発明の一実施例を図面に基づいて説明する。 Hereinafter, one embodiment of the present invention will be described based on the drawings.
第１図及び第２図は本発明に係る固体電解コンデンサの
断面構造を示す概略図で、第１図はその全体を示し、第
２図は第１図のＡ部分の拡大図である。固体電解コンデ
ンサのコンデンサ素子は図示するように誘電体酸化被膜
を形成できる金属基板１の表面に、誘電体酸化被膜２、
絶縁性樹脂薄膜層３、複素環式化合物の導電性ポリマー
層４、グラファイト層５及び銀ペースト層６を順次形成
し、金属基板１上に一方の電極端子７を取り付け、銀ペ
ーストＦＩＧ上に他方の電極端子８を取り付けた構成で
ある。以下、上記各部を詳細に説明する。1 and 2 are schematic diagrams showing the cross-sectional structure of a solid electrolytic capacitor according to the present invention, with FIG. 1 showing the whole, and FIG. 2 being an enlarged view of portion A in FIG. 1. As shown in the figure, the capacitor element of the solid electrolytic capacitor has a dielectric oxide film 2 on the surface of a metal substrate 1 on which a dielectric oxide film can be formed.
An insulating resin thin film layer 3, a conductive polymer layer 4 made of a heterocyclic compound, a graphite layer 5, and a silver paste layer 6 are sequentially formed, one electrode terminal 7 is attached on the metal substrate 1, and the other electrode terminal is attached on the silver paste FIG. This is a configuration in which an electrode terminal 8 is attached. Each of the above parts will be explained in detail below.
金属基板１はチタン、タンタル及びアルミニウムのよう
な誘電体酸化皮膜を形成できる金属からなる基板である
。The metal substrate 1 is a substrate made of a metal such as titanium, tantalum, and aluminum on which a dielectric oxide film can be formed.
誘電体酸化被膜２は金属基板１の表面に形成される。例
えば金属基板１としてアルミニウム基板を用いた場合、
該アルミニウム基板をエツチング処理により粗面化し、
該粗面化した表面に化成化処理により、厚さ１００〜２
０００人の酸化アルミニウム層を形成する。Dielectric oxide film 2 is formed on the surface of metal substrate 1 . For example, when an aluminum substrate is used as the metal substrate 1,
The aluminum substrate is roughened by etching treatment,
The roughened surface is chemically treated to give a thickness of 100 to 2
000 to form an aluminum oxide layer.
絶縁性樹脂薄膜層３の形成方法には下記のような２つの
方法がある。There are two methods for forming the insulating resin thin film layer 3 as described below.
その一つは、プロロオレフィンとアルキルビニールエー
テルの共重合体又はポリ塩化ビニル又はポリ塩化ビニリ
デンを、キシレンジオキシン酸又はＮＮジメチルホルム
アミド等の溶媒に溶解させて、誘電体酸化被膜２の上に
塗布又はデツプするごとにＪり絶縁性樹脂薄膜層３を形
成する。One method is to dissolve a copolymer of proloolefin and alkyl vinyl ether, polyvinyl chloride, or polyvinylidene chloride in a solvent such as xylene dioxic acid or NN dimethylformamide, and apply it on the dielectric oxide film 2 or An insulating resin thin film layer 3 is formed at each depth.
また、他の一つはアニオン電着が可能な、例えばウレタ
ン系不飽和樹脂等の水溶性又は非水溶性の樹脂を電荷粒
子として溶媒中に分散させ、この中に誘電体酸化被膜２
を形成した金属基板１を浸漬し、該金属基板１を陽極と
し、対向電極を陰極として所定の直流電圧を印加するこ
とにより、誘電体酸化被膜２の上に絶縁性樹脂薄膜Ｒ３
を形成する。Another method is to disperse water-soluble or water-insoluble resin such as urethane-based unsaturated resin, which can be anionically electrodeposited, in a solvent as charged particles, and then form a dielectric oxide film 2 in the charged particles.
The insulating resin thin film R3 is formed on the dielectric oxide film 2 by dipping the metal substrate 1 on which the dielectric oxide film 2 has been formed and applying a predetermined DC voltage with the metal substrate 1 as an anode and the counter electrode as a cathode.
form.
複素環式化合物の導電性ポリマー層４の形成は、複素環
式化合物を含む電解液中で電解酸化重合により形成する
。例えば複素環式化合物としてビロールを用いる場合は
、アセトニトリル或いはアセトンを溶媒としてビロー・
ルとボロジサリチル酸塩のアンモニウムボロジサリシレ
ート（ＡＢＳ）とを含む電解液中に前記絶縁性樹脂薄膜
層３を形成した金属基板１を浸漬し、該金属基板１を陽
極とし、対向電極を陰極として所定の直流電圧を印加す
ることによりにより、電解液中に電解酸化重合が起こり
、絶縁性ｍ詣薄膜層３の表面にビＤ−ルの導電性ポリマ
ー層、即ちポリピロール層が形成される。なお、このポ
リピロール層の形成の詳細は、本出願人が先に出願した
特願昭６２−２２７６４７号の明細書に詳細に開示して
いるからここでは省略する。The conductive polymer layer 4 of the heterocyclic compound is formed by electrolytic oxidative polymerization in an electrolytic solution containing the heterocyclic compound. For example, when using virol as a heterocyclic compound, virol can be prepared using acetonitrile or acetone as a solvent.
The metal substrate 1 on which the insulating resin thin film layer 3 is formed is immersed in an electrolytic solution containing ammonium borodisalicylate (ABS), which is a borodisalicylate, and the metal substrate 1 is used as an anode, and the counter electrode is used as a cathode. By applying a predetermined DC voltage, electrolytic oxidative polymerization occurs in the electrolytic solution, and a conductive polymer layer of beer, that is, a polypyrrole layer, is formed on the surface of the insulating thin film layer 3. The details of the formation of this polypyrrole layer are omitted here because they are disclosed in detail in the specification of Japanese Patent Application No. 62-227647 previously filed by the present applicant.
グラファイト層５及び銀ペースト層６を形成するには、
グラフアイ）・溶液中に浸漬した後、硬化させてグラフ
ァイト層５を形成した後、更に銀ペースト溶液中に浸漬
して銀ペスートを塗布し、その後硬化させることにより
銀ペースト層６を形成する。To form the graphite layer 5 and the silver paste layer 6,
Graphite) - After being immersed in a solution and hardened to form a graphite layer 5, it is further dipped in a silver paste solution to apply silver paste, and then hardened to form a silver paste layer 6.
上記のように誘電体酸化被膜２の上に絶縁性樹脂薄膜！
３を形成することにより、誘電体酸化被膜２を形成する
時に発生した欠陥部をこの絶縁性樹脂薄膜層３が覆うこ
とにより保護し、コンデンサの漏れ電流を大幅に低下さ
せることができる。As mentioned above, there is an insulating resin thin film on the dielectric oxide film 2!
3, the insulating resin thin film layer 3 covers and protects the defective portions generated during the formation of the dielectric oxide film 2, thereby significantly reducing the leakage current of the capacitor.
また、コンデンサ中に水分が入った場合、絶縁性樹脂薄
膜層３を形成しないと、この欠陥部に水分が入り、コン
デンサの静電容量が増加してしまうが、絶縁性樹脂薄膜
層３を形成することによりこのような問題はなくなる。In addition, if moisture enters the capacitor, if the insulating resin thin film layer 3 is not formed, moisture will enter the defective part and increase the capacitance of the capacitor. By doing so, this problem will disappear.
以上説明したように、本発明によれば下記のような優れ
た効果が得られる。As explained above, according to the present invention, the following excellent effects can be obtained.
（１）誘電体酸化皮膜層上に絶縁性樹脂薄膜層を形成す
るので、誘電体酸化皮膜層の絶縁欠陥部がこの絶縁性樹
脂薄膜層で補修きれたことになり、漏洩′Ｆｔ流の極め
て小さい固体電解コンデンサを提供できる。(1) Since the insulating resin thin film layer is formed on the dielectric oxide film layer, the insulation defects in the dielectric oxide film layer can be repaired by this insulating resin thin film layer, and the leakage 'Ft flow is extremely We can provide small solid electrolytic capacitors.
（２）また、絶縁性樹脂薄膜層が誘電体酸化被膜の欠陥
部に浸透する水分を阻止する作用を奏するから、容量変
化の少ない固体電解コンデンサを提供できる。(2) Furthermore, since the insulating resin thin film layer acts to prevent moisture from penetrating into the defective portions of the dielectric oxide film, a solid electrolytic capacitor with little capacitance change can be provided.
第１図は本発明に係る固体電解コンデンサの断面構造を
示す概略図、第２図は第１図のＡ部分の拡大図である。
図中、１・・・・金属基板、２・・・・誘電体酸化被膜
、３・・・・絶縁性樹脂薄膜層、４・・・・複素環式化
合物の導電性ポリマー層、５・・・・グラファイト層、
６・・・・銀ペースト層、７，８・・・・電極端子。FIG. 1 is a schematic diagram showing the cross-sectional structure of a solid electrolytic capacitor according to the present invention, and FIG. 2 is an enlarged view of portion A in FIG. 1. In the figure, 1...metal substrate, 2...dielectric oxide film, 3...insulating resin thin film layer, 4...conductive polymer layer of heterocyclic compound, 5...・Graphite layer,
6... Silver paste layer, 7, 8... Electrode terminal.
Claims (1)
酸化皮膜を形成した後、該誘電体酸化皮膜層上に絶縁性
樹脂薄膜層を形成し、該絶縁性樹脂薄膜層上に複素環式
化合物の導電性ポリマー層、導電体層を順次形成し、該
導電体層を一方の電極とし、前記金属基体を他方の電極
としたことを特徴とする固体電解コンデンサ。After forming a dielectric oxide film on the surface of a metal substrate on which a dielectric oxide film can be formed, an insulating resin thin film layer is formed on the dielectric oxide film layer, and a heterocyclic compound is formed on the insulating resin thin film layer. A solid electrolytic capacitor characterized in that a conductive polymer layer and a conductor layer are sequentially formed, the conductor layer serves as one electrode, and the metal substrate serves as the other electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22922388A JPH0277110A (en) | 1988-09-13 | 1988-09-13 | Solid electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22922388A JPH0277110A (en) | 1988-09-13 | 1988-09-13 | Solid electrolytic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0277110A true JPH0277110A (en) | 1990-03-16 |
Family
ID=16888759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22922388A Pending JPH0277110A (en) | 1988-09-13 | 1988-09-13 | Solid electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0277110A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100753612B1 (en) * | 2001-05-09 | 2007-08-29 | 에스케이케미칼주식회사 | Solid Electrolyte Capacitor and Method for Producing the Same |
-
1988
- 1988-09-13 JP JP22922388A patent/JPH0277110A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100753612B1 (en) * | 2001-05-09 | 2007-08-29 | 에스케이케미칼주식회사 | Solid Electrolyte Capacitor and Method for Producing the Same |
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