JPS57192047A - Wiring layer in semiconductor device and manufacture thereof - Google Patents
Wiring layer in semiconductor device and manufacture thereofInfo
- Publication number
- JPS57192047A JPS57192047A JP56077401A JP7740181A JPS57192047A JP S57192047 A JPS57192047 A JP S57192047A JP 56077401 A JP56077401 A JP 56077401A JP 7740181 A JP7740181 A JP 7740181A JP S57192047 A JPS57192047 A JP S57192047A
- Authority
- JP
- Japan
- Prior art keywords
- platinum
- layer
- semiconductor device
- silicide
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H10W20/4451—
-
- H10W20/066—
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56077401A JPS57192047A (en) | 1981-05-20 | 1981-05-20 | Wiring layer in semiconductor device and manufacture thereof |
| DE19823218974 DE3218974A1 (de) | 1981-05-20 | 1982-05-19 | Leiterverbindungsschicht fuer halbleitervorrichtungen und verfahren zu ihrer herstellung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56077401A JPS57192047A (en) | 1981-05-20 | 1981-05-20 | Wiring layer in semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57192047A true JPS57192047A (en) | 1982-11-26 |
Family
ID=13632873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56077401A Pending JPS57192047A (en) | 1981-05-20 | 1981-05-20 | Wiring layer in semiconductor device and manufacture thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS57192047A (cg-RX-API-DMAC10.html) |
| DE (1) | DE3218974A1 (cg-RX-API-DMAC10.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62120354U (cg-RX-API-DMAC10.html) * | 1986-01-22 | 1987-07-30 | ||
| JPH07221096A (ja) * | 1994-01-24 | 1995-08-18 | Lg Semicon Co Ltd | シリサイドプラグ形成方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59154040A (ja) * | 1983-02-22 | 1984-09-03 | Toshiba Corp | 半導体装置の製造方法 |
| DE3314879A1 (de) * | 1983-04-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von stabilen, niederohmigen kontakten in integrierten halbleiterschaltungen |
| JPS62172755A (ja) * | 1986-01-27 | 1987-07-29 | Canon Inc | フオトセンサの作製方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5131189A (ja) * | 1974-09-11 | 1976-03-17 | Sony Corp | Handotaisochi |
| JPS5521131A (en) * | 1978-08-01 | 1980-02-15 | Seiko Epson Corp | Semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4265935A (en) * | 1977-04-28 | 1981-05-05 | Micro Power Systems Inc. | High temperature refractory metal contact assembly and multiple layer interconnect structure |
-
1981
- 1981-05-20 JP JP56077401A patent/JPS57192047A/ja active Pending
-
1982
- 1982-05-19 DE DE19823218974 patent/DE3218974A1/de active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5131189A (ja) * | 1974-09-11 | 1976-03-17 | Sony Corp | Handotaisochi |
| JPS5521131A (en) * | 1978-08-01 | 1980-02-15 | Seiko Epson Corp | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62120354U (cg-RX-API-DMAC10.html) * | 1986-01-22 | 1987-07-30 | ||
| JPH07221096A (ja) * | 1994-01-24 | 1995-08-18 | Lg Semicon Co Ltd | シリサイドプラグ形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3218974A1 (de) | 1982-12-16 |
| DE3218974C2 (cg-RX-API-DMAC10.html) | 1992-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5293278A (en) | Manufacture for mos type semiconductor intergrated circuit | |
| JPS57192047A (en) | Wiring layer in semiconductor device and manufacture thereof | |
| JPS5638863A (en) | Semiconductor device | |
| JPS564248A (en) | Semiconductor device | |
| JPS57170524A (en) | Manufacture of semiconductor device | |
| JPS5766671A (en) | Semiconductor device | |
| JPS57152161A (en) | Manufacture of semiconductor device | |
| JPS52154367A (en) | Production of semiconductor device | |
| JPS5570023A (en) | Formation of electrode and wiring for semiconductor | |
| JPS57169267A (en) | Semiconductor device and manufacture thereof | |
| JPS5427382A (en) | Semiconductor integrated circuit device | |
| JPS5289476A (en) | Semiconductor device | |
| JPS54103672A (en) | Production of semiconductor device | |
| JPS57114274A (en) | Electrode for semiconductor device and manufacture thereof | |
| JPS5348481A (en) | Production of semiconductor device | |
| JPS56130970A (en) | Manufacture of semiconductor device | |
| JPS57187969A (en) | Manufacture of schottky barrier diode | |
| JPS56164529A (en) | Manufacture of semiconductor device | |
| JPS56130920A (en) | Forming method of electrode for semiconductor device | |
| JPS5363986A (en) | Production of semiconductor device | |
| JPS5627923A (en) | Manufacture of semiconductor device | |
| JPS5210673A (en) | Manufacturing method of silicon semi-conductor device | |
| JPS53147482A (en) | Production of semiconductor device | |
| JPS57194548A (en) | Manufacture of semiconductor device | |
| JPS56142677A (en) | Manufacture of semiconductor integrated circuit |