JPS57170524A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57170524A
JPS57170524A JP5671281A JP5671281A JPS57170524A JP S57170524 A JPS57170524 A JP S57170524A JP 5671281 A JP5671281 A JP 5671281A JP 5671281 A JP5671281 A JP 5671281A JP S57170524 A JPS57170524 A JP S57170524A
Authority
JP
Japan
Prior art keywords
film
layer
hole
metallic
metallic film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5671281A
Other languages
Japanese (ja)
Inventor
Iwao Higashinakagaha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5671281A priority Critical patent/JPS57170524A/en
Publication of JPS57170524A publication Critical patent/JPS57170524A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To obtain a wiring layer of ultrafine size by covering a semiconductor substrate formed with an insulating film having a contact hole with the first metallic film, heat treating it to produce a metal-semiconductor compound film in the hole, removing the unreacted first film and burying the second metallic film in the first metallic film remaining on the bottom surface. CONSTITUTION:With an insulating film 2 as a mask the prescribed diffused layer 3 is formed on an Si substrate 1, an insulating film 4 is coverted again on the overall surface including the layer 3, a contacting hole 5 is opened at the position corresponding to the layer 3, and a Px film 6 of the first thin metallic film having a thickness of approx. 500-1,000Angstrom is covered by sputtering or depositing on the overall surface. Then, it is heat treated at 500-700 deg.C in the N2 atmosphere to produce a platinum silicide film 7, the unreacted film 7 is removed by aqua regia, and the film 7 allows to remain only on the bottom of the hole 5. Thereafter, the film is buried with an Ni film 8 of the second metallic film by plating, and an aluminum wire layer 9 which makes contact with the film is mounted.
JP5671281A 1981-04-15 1981-04-15 Manufacture of semiconductor device Pending JPS57170524A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5671281A JPS57170524A (en) 1981-04-15 1981-04-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5671281A JPS57170524A (en) 1981-04-15 1981-04-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57170524A true JPS57170524A (en) 1982-10-20

Family

ID=13035086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5671281A Pending JPS57170524A (en) 1981-04-15 1981-04-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57170524A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61182245A (en) * 1985-01-31 1986-08-14 アメリカン　マイクロシステムズ　インコーポレイテッド Method and element for forming thin film-like mutual connection signal surface to connect a plurality of semiconductor ics
JPS63229840A (en) * 1987-03-19 1988-09-26 Nec Corp Formation of multilayer interconnection
JPH02341A (en) * 1987-02-02 1990-01-05 Seiko Epson Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61182245A (en) * 1985-01-31 1986-08-14 アメリカン　マイクロシステムズ　インコーポレイテッド Method and element for forming thin film-like mutual connection signal surface to connect a plurality of semiconductor ics
JPH02341A (en) * 1987-02-02 1990-01-05 Seiko Epson Corp Semiconductor device
JPS63229840A (en) * 1987-03-19 1988-09-26 Nec Corp Formation of multilayer interconnection

Similar Documents

Publication Publication Date Title
JPS55163860A (en) Manufacture of semiconductor device
KR960004095B1 (en) Manufacturing method of metal plug in contact-hole
EP0128385A3 (en) Method of producing a semiconductor device having electrodes and wirings
JPS57170524A (en) Manufacture of semiconductor device
GB1139352A (en) Process for making ohmic contact to a semiconductor substrate
JPS57192047A (en) Wiring layer in semiconductor device and manufacture thereof
JPS5764927A (en) Manufacture of semiconductor device
JPS5735318A (en) Manufacture of semiconductor device
JPS55151334A (en) Fabricating method of semiconductor device
JPS564248A (en) Semiconductor device
JPS56162873A (en) Insulated gate type field effect semiconductor device
JPS5638863A (en) Semiconductor device
JPS56130920A (en) Forming method of electrode for semiconductor device
JPS57145320A (en) Manufacture of semiconductor device
JPS57121254A (en) Manufacture of semiconductor device
JPS5776832A (en) Method for forming palladium silicide
JPS57181143A (en) Manufacture of semiconductor device
JPS5575226A (en) Manufacturing semiconductor device
JPS5289476A (en) Semiconductor device
JPS56164527A (en) Manufacture of semiconductor device
JPS57126149A (en) Manufacture of semiconductor device
JPS5519880A (en) Manufacturing method of semiconductor device
JPS57114274A (en) Electrode for semiconductor device and manufacture thereof
JPS5363986A (en) Production of semiconductor device
JPS5555546A (en) Method of wiring semiconductor device