JPS57187968A - Manufacture of field effect transistor - Google Patents

Manufacture of field effect transistor

Info

Publication number
JPS57187968A
JPS57187968A JP7250881A JP7250881A JPS57187968A JP S57187968 A JPS57187968 A JP S57187968A JP 7250881 A JP7250881 A JP 7250881A JP 7250881 A JP7250881 A JP 7250881A JP S57187968 A JPS57187968 A JP S57187968A
Authority
JP
Japan
Prior art keywords
layer
film
pattern
gate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7250881A
Other languages
English (en)
Inventor
Yoichi Aono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7250881A priority Critical patent/JPS57187968A/ja
Publication of JPS57187968A publication Critical patent/JPS57187968A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP7250881A 1981-05-14 1981-05-14 Manufacture of field effect transistor Pending JPS57187968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7250881A JPS57187968A (en) 1981-05-14 1981-05-14 Manufacture of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7250881A JPS57187968A (en) 1981-05-14 1981-05-14 Manufacture of field effect transistor

Publications (1)

Publication Number Publication Date
JPS57187968A true JPS57187968A (en) 1982-11-18

Family

ID=13491348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7250881A Pending JPS57187968A (en) 1981-05-14 1981-05-14 Manufacture of field effect transistor

Country Status (1)

Country Link
JP (1) JPS57187968A (ja)

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