JPS57187968A - Manufacture of field effect transistor - Google Patents
Manufacture of field effect transistorInfo
- Publication number
- JPS57187968A JPS57187968A JP7250881A JP7250881A JPS57187968A JP S57187968 A JPS57187968 A JP S57187968A JP 7250881 A JP7250881 A JP 7250881A JP 7250881 A JP7250881 A JP 7250881A JP S57187968 A JPS57187968 A JP S57187968A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- pattern
- gate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7250881A JPS57187968A (en) | 1981-05-14 | 1981-05-14 | Manufacture of field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7250881A JPS57187968A (en) | 1981-05-14 | 1981-05-14 | Manufacture of field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57187968A true JPS57187968A (en) | 1982-11-18 |
Family
ID=13491348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7250881A Pending JPS57187968A (en) | 1981-05-14 | 1981-05-14 | Manufacture of field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57187968A (ja) |
-
1981
- 1981-05-14 JP JP7250881A patent/JPS57187968A/ja active Pending
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