JPS57181186A - Semiconductor light emission device - Google Patents

Semiconductor light emission device

Info

Publication number
JPS57181186A
JPS57181186A JP6675081A JP6675081A JPS57181186A JP S57181186 A JPS57181186 A JP S57181186A JP 6675081 A JP6675081 A JP 6675081A JP 6675081 A JP6675081 A JP 6675081A JP S57181186 A JPS57181186 A JP S57181186A
Authority
JP
Japan
Prior art keywords
groove
layer
inp
epitaxial growth
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6675081A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6322478B2 (en, 2012
Inventor
Hiroshi Ishikawa
Nobuyuki Takagi
Hajime Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6675081A priority Critical patent/JPS57181186A/ja
Publication of JPS57181186A publication Critical patent/JPS57181186A/ja
Publication of JPS6322478B2 publication Critical patent/JPS6322478B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP6675081A 1981-05-01 1981-05-01 Semiconductor light emission device Granted JPS57181186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6675081A JPS57181186A (en) 1981-05-01 1981-05-01 Semiconductor light emission device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6675081A JPS57181186A (en) 1981-05-01 1981-05-01 Semiconductor light emission device

Publications (2)

Publication Number Publication Date
JPS57181186A true JPS57181186A (en) 1982-11-08
JPS6322478B2 JPS6322478B2 (en, 2012) 1988-05-12

Family

ID=13324862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6675081A Granted JPS57181186A (en) 1981-05-01 1981-05-01 Semiconductor light emission device

Country Status (1)

Country Link
JP (1) JPS57181186A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0471880U (en, 2012) * 1990-10-30 1992-06-25

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493380A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Semiconductor light emitting device
JPS55121693A (en) * 1979-03-15 1980-09-18 Tokyo Inst Of Technol Manufacture of band-like semiconductor laser by selective melt-back process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493380A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Semiconductor light emitting device
JPS55121693A (en) * 1979-03-15 1980-09-18 Tokyo Inst Of Technol Manufacture of band-like semiconductor laser by selective melt-back process

Also Published As

Publication number Publication date
JPS6322478B2 (en, 2012) 1988-05-12

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