JPS6322478B2 - - Google Patents
Info
- Publication number
- JPS6322478B2 JPS6322478B2 JP56066750A JP6675081A JPS6322478B2 JP S6322478 B2 JPS6322478 B2 JP S6322478B2 JP 56066750 A JP56066750 A JP 56066750A JP 6675081 A JP6675081 A JP 6675081A JP S6322478 B2 JPS6322478 B2 JP S6322478B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inp
- groove
- light emitting
- current blocking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6675081A JPS57181186A (en) | 1981-05-01 | 1981-05-01 | Semiconductor light emission device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6675081A JPS57181186A (en) | 1981-05-01 | 1981-05-01 | Semiconductor light emission device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57181186A JPS57181186A (en) | 1982-11-08 |
JPS6322478B2 true JPS6322478B2 (en, 2012) | 1988-05-12 |
Family
ID=13324862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6675081A Granted JPS57181186A (en) | 1981-05-01 | 1981-05-01 | Semiconductor light emission device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57181186A (en, 2012) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0471880U (en, 2012) * | 1990-10-30 | 1992-06-25 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5493380A (en) * | 1977-12-30 | 1979-07-24 | Fujitsu Ltd | Semiconductor light emitting device |
JPS55121693A (en) * | 1979-03-15 | 1980-09-18 | Tokyo Inst Of Technol | Manufacture of band-like semiconductor laser by selective melt-back process |
-
1981
- 1981-05-01 JP JP6675081A patent/JPS57181186A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0471880U (en, 2012) * | 1990-10-30 | 1992-06-25 |
Also Published As
Publication number | Publication date |
---|---|
JPS57181186A (en) | 1982-11-08 |
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