JPS57180169A - Insulating gate type protective device - Google Patents

Insulating gate type protective device

Info

Publication number
JPS57180169A
JPS57180169A JP56065461A JP6546181A JPS57180169A JP S57180169 A JPS57180169 A JP S57180169A JP 56065461 A JP56065461 A JP 56065461A JP 6546181 A JP6546181 A JP 6546181A JP S57180169 A JPS57180169 A JP S57180169A
Authority
JP
Japan
Prior art keywords
electrode
diode
oxide film
drain
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56065461A
Other languages
English (en)
Other versions
JPH0158670B2 (ja
Inventor
Takashi Uno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56065461A priority Critical patent/JPS57180169A/ja
Publication of JPS57180169A publication Critical patent/JPS57180169A/ja
Publication of JPH0158670B2 publication Critical patent/JPH0158670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP56065461A 1981-04-30 1981-04-30 Insulating gate type protective device Granted JPS57180169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56065461A JPS57180169A (en) 1981-04-30 1981-04-30 Insulating gate type protective device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56065461A JPS57180169A (en) 1981-04-30 1981-04-30 Insulating gate type protective device

Publications (2)

Publication Number Publication Date
JPS57180169A true JPS57180169A (en) 1982-11-06
JPH0158670B2 JPH0158670B2 (ja) 1989-12-13

Family

ID=13287779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56065461A Granted JPS57180169A (en) 1981-04-30 1981-04-30 Insulating gate type protective device

Country Status (1)

Country Link
JP (1) JPS57180169A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142556A (ja) * 1983-12-28 1985-07-27 Toshiba Corp 入力保護回路
EP0424172A2 (en) * 1989-10-20 1991-04-24 Fujitsu Limited Nonvolatile semiconductor memory apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558087A (en) * 1978-07-03 1980-01-21 Nec Corp Semiconductor device with input protection device
JPS5578576A (en) * 1978-12-08 1980-06-13 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558087A (en) * 1978-07-03 1980-01-21 Nec Corp Semiconductor device with input protection device
JPS5578576A (en) * 1978-12-08 1980-06-13 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142556A (ja) * 1983-12-28 1985-07-27 Toshiba Corp 入力保護回路
EP0424172A2 (en) * 1989-10-20 1991-04-24 Fujitsu Limited Nonvolatile semiconductor memory apparatus
US5642308A (en) * 1989-10-20 1997-06-24 Fujitsu Limited Nonvolatile semiconductor memory apparatus

Also Published As

Publication number Publication date
JPH0158670B2 (ja) 1989-12-13

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