GB2009502A - Field Effect semiconductor device - Google Patents

Field Effect semiconductor device

Info

Publication number
GB2009502A
GB2009502A GB7845243A GB7845243A GB2009502A GB 2009502 A GB2009502 A GB 2009502A GB 7845243 A GB7845243 A GB 7845243A GB 7845243 A GB7845243 A GB 7845243A GB 2009502 A GB2009502 A GB 2009502A
Authority
GB
United Kingdom
Prior art keywords
field effect
regions
over
dielectric layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7845243A
Other versions
GB2009502B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of GB2009502A publication Critical patent/GB2009502A/en
Application granted granted Critical
Publication of GB2009502B publication Critical patent/GB2009502B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)

Abstract

A bilateral, two terminal current limiting field effect resistor device is relatively insensitive to both positive and negative input overvoltages and may be utilized to protect the gate oxide capacitance of metal-oxide- semiconductor (MOS) device. The field effect resistor device is fabricated with a n<+>n<->n<+> or p<+>p<->p<+> semiconductive layer 14-16 deposited over an insulating (e.g. sapphire) substrate 12. A dielectric layer 21 covers the n<-> or p<-> region and has gate regions 18 and 20 adjacent the p<+> or n<+> regions respectively. Metalization terminals 24 and 26 extend over a respective one of the p<+> or n<+> regions, over the corresponding gate regions and on to a passivation layer 22 on the central part of the dielectric layer. The device has a linear characteristic for low input voltages and a saturation mode of operation (constant current characteristic) for higher voltages. <IMAGE>
GB7845243A 1977-12-06 1978-11-20 Field effect semiconductor device Expired GB2009502B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85804977A 1977-12-06 1977-12-06

Publications (2)

Publication Number Publication Date
GB2009502A true GB2009502A (en) 1979-06-13
GB2009502B GB2009502B (en) 1982-03-10

Family

ID=25327353

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7845243A Expired GB2009502B (en) 1977-12-06 1978-11-20 Field effect semiconductor device

Country Status (5)

Country Link
JP (1) JPS5483782A (en)
CA (1) CA1132720A (en)
DE (1) DE2852776A1 (en)
FR (1) FR2411492A1 (en)
GB (1) GB2009502B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2512589A1 (en) * 1981-09-05 1983-03-11 Nippon Telegraph & Telephone VOLTAGE-CONTROLLED VARIABLE RESISTOR FOR ELECTRONIC CIRCUIT
FR2676865A1 (en) * 1985-05-15 1992-11-27 Hughes Aircraft Co Monolithic switching and power-limiting device for high-frequency signals

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1040321A (en) * 1974-07-23 1978-10-10 Alfred C. Ipri Polycrystalline silicon resistive device for integrated circuits and method for making same
US4035757A (en) * 1975-11-24 1977-07-12 Rca Corporation Semiconductor device resistors having selected temperature coefficients

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2512589A1 (en) * 1981-09-05 1983-03-11 Nippon Telegraph & Telephone VOLTAGE-CONTROLLED VARIABLE RESISTOR FOR ELECTRONIC CIRCUIT
NL8203424A (en) * 1981-09-05 1983-04-05 Nippon Telegraph & Telephone VARIABLE MISS RESISTANCE.
FR2676865A1 (en) * 1985-05-15 1992-11-27 Hughes Aircraft Co Monolithic switching and power-limiting device for high-frequency signals

Also Published As

Publication number Publication date
FR2411492A1 (en) 1979-07-06
FR2411492B1 (en) 1983-06-24
JPS5483782A (en) 1979-07-04
DE2852776A1 (en) 1979-06-13
GB2009502B (en) 1982-03-10
CA1132720A (en) 1982-09-28

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee