JPS57180117A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57180117A
JPS57180117A JP56065904A JP6590481A JPS57180117A JP S57180117 A JPS57180117 A JP S57180117A JP 56065904 A JP56065904 A JP 56065904A JP 6590481 A JP6590481 A JP 6590481A JP S57180117 A JPS57180117 A JP S57180117A
Authority
JP
Japan
Prior art keywords
film
single crystal
semiconductor film
transformed
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56065904A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0257337B2 (enrdf_load_stackoverflow
Inventor
Kikuo Yamabe
Kenji Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56065904A priority Critical patent/JPS57180117A/ja
Publication of JPS57180117A publication Critical patent/JPS57180117A/ja
Publication of JPH0257337B2 publication Critical patent/JPH0257337B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP56065904A 1981-04-30 1981-04-30 Manufacture of semiconductor device Granted JPS57180117A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56065904A JPS57180117A (en) 1981-04-30 1981-04-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56065904A JPS57180117A (en) 1981-04-30 1981-04-30 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57180117A true JPS57180117A (en) 1982-11-06
JPH0257337B2 JPH0257337B2 (enrdf_load_stackoverflow) 1990-12-04

Family

ID=13300409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56065904A Granted JPS57180117A (en) 1981-04-30 1981-04-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57180117A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01162322A (ja) * 1987-12-19 1989-06-26 Agency Of Ind Science & Technol 半導体単結晶層の製造方法
JPH01264214A (ja) * 1988-04-15 1989-10-20 Hitachi Ltd 半導体装置の製造方法
JP2008141046A (ja) * 2006-12-04 2008-06-19 Semiconductor Energy Lab Co Ltd 半導体膜の結晶化方法、および半導体装置の作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01162322A (ja) * 1987-12-19 1989-06-26 Agency Of Ind Science & Technol 半導体単結晶層の製造方法
JPH01264214A (ja) * 1988-04-15 1989-10-20 Hitachi Ltd 半導体装置の製造方法
JP2008141046A (ja) * 2006-12-04 2008-06-19 Semiconductor Energy Lab Co Ltd 半導体膜の結晶化方法、および半導体装置の作製方法

Also Published As

Publication number Publication date
JPH0257337B2 (enrdf_load_stackoverflow) 1990-12-04

Similar Documents

Publication Publication Date Title
US4292091A (en) Method of producing semiconductor devices by selective laser irradiation and oxidation
JPS56142630A (en) Manufacture of semiconductor device
JPS5477588A (en) Heat insulating single piece semiconductor die and method of producing same
JPS6445162A (en) Manufacture of semiconductor device
JPS57180117A (en) Manufacture of semiconductor device
JPS57155726A (en) Manufacture of semiconductor device
KR930009018A (ko) 반도체장치의 제조방법
JPS57157519A (en) Manufacture of semiconductor device
JPS5678155A (en) Semiconductor device and manufacture thereof
JPS5635434A (en) Manufacturing of semiconductor device
JPS5541709A (en) Sos semiconductor base
JPS57180118A (en) Manufacture of semiconductor device
JPS5552220A (en) Manufacturing of semiconductor intergrated circuit
JPS57167669A (en) Capacitor and manufacture thereof
JPS57155764A (en) Manufacture of semiconductor device
JPS5687339A (en) Manufacture of semiconductor device
JPS57102053A (en) Semiconductor device
JPS5565459A (en) Manufacture of semiconductor device
JPS57211737A (en) Manufacture of semiconductor substrate
JPS5694671A (en) Manufacture of mis field-effect semiconductor device
JPS6489457A (en) Manufacture of semiconductor device
JPS6454773A (en) Manufacture of superconducting device
JPS5693358A (en) Manufacture of resistor
JPS5638838A (en) Manufacture of semiconductor device
JPS5680125A (en) Formation of monocrystalline semiconductor film