JPH1064817A5 - - Google Patents

Info

Publication number
JPH1064817A5
JPH1064817A5 JP1996232607A JP23260796A JPH1064817A5 JP H1064817 A5 JPH1064817 A5 JP H1064817A5 JP 1996232607 A JP1996232607 A JP 1996232607A JP 23260796 A JP23260796 A JP 23260796A JP H1064817 A5 JPH1064817 A5 JP H1064817A5
Authority
JP
Japan
Prior art keywords
oxide layer
silicon substrate
layer
oxygen
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996232607A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1064817A (ja
JP4104682B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP23260796A priority Critical patent/JP4104682B2/ja
Priority claimed from JP23260796A external-priority patent/JP4104682B2/ja
Priority to US08/912,975 priority patent/US6287900B1/en
Publication of JPH1064817A publication Critical patent/JPH1064817A/ja
Priority to US09/203,549 priority patent/US5949115A/en
Publication of JPH1064817A5 publication Critical patent/JPH1064817A5/ja
Application granted granted Critical
Publication of JP4104682B2 publication Critical patent/JP4104682B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP23260796A 1996-08-13 1996-08-13 半導体装置の作製方法 Expired - Fee Related JP4104682B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP23260796A JP4104682B2 (ja) 1996-08-13 1996-08-13 半導体装置の作製方法
US08/912,975 US6287900B1 (en) 1996-08-13 1997-08-13 Semiconductor device with catalyst addition and removal
US09/203,549 US5949115A (en) 1996-08-13 1998-12-01 Semiconductor device including nickel formed on a crystalline silicon substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23260796A JP4104682B2 (ja) 1996-08-13 1996-08-13 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH1064817A JPH1064817A (ja) 1998-03-06
JPH1064817A5 true JPH1064817A5 (enrdf_load_stackoverflow) 2004-08-19
JP4104682B2 JP4104682B2 (ja) 2008-06-18

Family

ID=16942009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23260796A Expired - Fee Related JP4104682B2 (ja) 1996-08-13 1996-08-13 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4104682B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE42097E1 (en) 1998-09-04 2011-02-01 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6464363B1 (en) 1999-03-17 2002-10-15 Olympus Optical Co., Ltd. Variable mirror, optical apparatus and decentered optical system which include variable mirror, variable-optical characteristic optical element or combination thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE42097E1 (en) 1998-09-04 2011-02-01 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
USRE42139E1 (en) 1998-09-04 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device

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