JPH1064817A5 - - Google Patents
Info
- Publication number
- JPH1064817A5 JPH1064817A5 JP1996232607A JP23260796A JPH1064817A5 JP H1064817 A5 JPH1064817 A5 JP H1064817A5 JP 1996232607 A JP1996232607 A JP 1996232607A JP 23260796 A JP23260796 A JP 23260796A JP H1064817 A5 JPH1064817 A5 JP H1064817A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide layer
- silicon substrate
- layer
- oxygen
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23260796A JP4104682B2 (ja) | 1996-08-13 | 1996-08-13 | 半導体装置の作製方法 |
| US08/912,975 US6287900B1 (en) | 1996-08-13 | 1997-08-13 | Semiconductor device with catalyst addition and removal |
| US09/203,549 US5949115A (en) | 1996-08-13 | 1998-12-01 | Semiconductor device including nickel formed on a crystalline silicon substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23260796A JP4104682B2 (ja) | 1996-08-13 | 1996-08-13 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH1064817A JPH1064817A (ja) | 1998-03-06 |
| JPH1064817A5 true JPH1064817A5 (enrdf_load_stackoverflow) | 2004-08-19 |
| JP4104682B2 JP4104682B2 (ja) | 2008-06-18 |
Family
ID=16942009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23260796A Expired - Fee Related JP4104682B2 (ja) | 1996-08-13 | 1996-08-13 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4104682B2 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE42097E1 (en) | 1998-09-04 | 2011-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000012864A (ja) | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US6464363B1 (en) | 1999-03-17 | 2002-10-15 | Olympus Optical Co., Ltd. | Variable mirror, optical apparatus and decentered optical system which include variable mirror, variable-optical characteristic optical element or combination thereof |
-
1996
- 1996-08-13 JP JP23260796A patent/JP4104682B2/ja not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE42097E1 (en) | 1998-09-04 | 2011-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
| USRE42139E1 (en) | 1998-09-04 | 2011-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
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