JP2000252474A5 - - Google Patents
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- Publication number
- JP2000252474A5 JP2000252474A5 JP1999371933A JP37193399A JP2000252474A5 JP 2000252474 A5 JP2000252474 A5 JP 2000252474A5 JP 1999371933 A JP1999371933 A JP 1999371933A JP 37193399 A JP37193399 A JP 37193399A JP 2000252474 A5 JP2000252474 A5 JP 2000252474A5
- Authority
- JP
- Japan
- Prior art keywords
- shi
- semiconductor film
- group
- film
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 description 42
- 229910052696 pnictogen Inorganic materials 0.000 description 14
- 238000002425 crystallisation Methods 0.000 description 12
- 230000008025 crystallization Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 239000004020 conductor Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP37193399A JP4531177B2 (ja) | 1998-12-28 | 1999-12-27 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10-374884 | 1998-12-28 | ||
JP37488498 | 1998-12-28 | ||
JP37193399A JP4531177B2 (ja) | 1998-12-28 | 1999-12-27 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000252474A JP2000252474A (ja) | 2000-09-14 |
JP2000252474A5 true JP2000252474A5 (enrdf_load_stackoverflow) | 2007-02-22 |
JP4531177B2 JP4531177B2 (ja) | 2010-08-25 |
Family
ID=26582366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP37193399A Expired - Fee Related JP4531177B2 (ja) | 1998-12-28 | 1999-12-27 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4531177B2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6599818B2 (en) | 2000-10-10 | 2003-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method |
KR100466964B1 (ko) | 2001-12-27 | 2005-01-24 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 박막 제조방법 |
JP4722391B2 (ja) * | 2003-12-04 | 2011-07-13 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの製造方法 |
KR101039024B1 (ko) | 2004-06-14 | 2011-06-03 | 삼성전자주식회사 | 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법 |
KR100875432B1 (ko) | 2007-05-31 | 2008-12-22 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
KR100889626B1 (ko) | 2007-08-22 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법 |
KR100889627B1 (ko) | 2007-08-23 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치 |
KR100982310B1 (ko) | 2008-03-27 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
KR100989136B1 (ko) | 2008-04-11 | 2010-10-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
KR101002666B1 (ko) | 2008-07-14 | 2010-12-21 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05109737A (ja) * | 1991-10-18 | 1993-04-30 | Casio Comput Co Ltd | 薄膜トランジスタの製造方法 |
JP2720779B2 (ja) * | 1993-12-28 | 1998-03-04 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
JP3539821B2 (ja) * | 1995-03-27 | 2004-07-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3942683B2 (ja) * | 1997-02-12 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
JP3973723B2 (ja) * | 1997-02-12 | 2007-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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1999
- 1999-12-27 JP JP37193399A patent/JP4531177B2/ja not_active Expired - Fee Related