JPS6445162A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6445162A
JPS6445162A JP20096087A JP20096087A JPS6445162A JP S6445162 A JPS6445162 A JP S6445162A JP 20096087 A JP20096087 A JP 20096087A JP 20096087 A JP20096087 A JP 20096087A JP S6445162 A JPS6445162 A JP S6445162A
Authority
JP
Japan
Prior art keywords
semiconductor films
thin film
film transistors
recrystallizing
isolatedly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20096087A
Other languages
Japanese (ja)
Other versions
JP2507464B2 (en
Inventor
Genshirou Kawachi
Kikuo Ono
Nobutake Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62200960A priority Critical patent/JP2507464B2/en
Publication of JPS6445162A publication Critical patent/JPS6445162A/en
Application granted granted Critical
Publication of JP2507464B2 publication Critical patent/JP2507464B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To enable multiple transistor circuits to be composed economically with high precision by a method wherein a part of semiconductor films is heated up to the recrystallizing temperature or more by a local heater to form thin film transistors after recrystallizing said transistor films. CONSTITUTION:Polycrystalline or amorphous semiconductor films are isolatedly composed in multiple regions on an insulating substrate 1. Then, at least a part of the isolatedly composed semiconductor films is heated by a local heater up to the recrystallizing temperature or more to recrystallize the semiconductor films 2. Later, thin film transistors are formed on respective semiconductor films 2, 3 in the multiple regions. Consequently, the thin film transistors can be prevented from melting down in the lateral direction in case of recrystallization due to beam irradiation. Through these procedures, multiple transistor circuits in different characteristics can be formed in high throughput with high precision within the same substrate 1.
JP62200960A 1987-08-13 1987-08-13 Method for manufacturing semiconductor device Expired - Lifetime JP2507464B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62200960A JP2507464B2 (en) 1987-08-13 1987-08-13 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62200960A JP2507464B2 (en) 1987-08-13 1987-08-13 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6445162A true JPS6445162A (en) 1989-02-17
JP2507464B2 JP2507464B2 (en) 1996-06-12

Family

ID=16433171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62200960A Expired - Lifetime JP2507464B2 (en) 1987-08-13 1987-08-13 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2507464B2 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247375A (en) * 1990-03-09 1993-09-21 Hitachi, Ltd. Display device, manufacturing method thereof and display panel
JPH06104432A (en) * 1992-09-18 1994-04-15 Semiconductor Energy Lab Co Ltd Film-shaped semiconductor device and its manufacture
JPH07135324A (en) * 1993-11-05 1995-05-23 Semiconductor Energy Lab Co Ltd Thin film semiconductor integrated circuit
JPH07183536A (en) * 1993-12-22 1995-07-21 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPH07183535A (en) * 1993-12-22 1995-07-21 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
US6218678B1 (en) 1993-11-05 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6288412B1 (en) 1994-01-26 2001-09-11 Sanyo Electric Co., Ltd. Thin film transistors for display devices having two polysilicon active layers of different thicknesses
US6335213B1 (en) 1991-06-19 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
JP2003168691A (en) * 2001-11-30 2003-06-13 Fujitsu Ltd Method for manufacturing semiconductor device
US6624445B2 (en) 1993-12-22 2003-09-23 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method of manufacturing the same
US6849482B2 (en) 1999-02-12 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
JPWO2003088331A1 (en) * 2002-04-15 2005-08-25 株式会社 液晶先端技術開発センター SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR THIN FILMS WITH DIFFERENT CRYSTALLINES, ITS SUBSTRATE, AND ITS MANUFACTURING METHOD

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584180A (en) * 1981-06-30 1983-01-11 セイコーエプソン株式会社 Active matrix substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584180A (en) * 1981-06-30 1983-01-11 セイコーエプソン株式会社 Active matrix substrate

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247375A (en) * 1990-03-09 1993-09-21 Hitachi, Ltd. Display device, manufacturing method thereof and display panel
US6335213B1 (en) 1991-06-19 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
US6847064B2 (en) 1991-06-19 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a thin film transistor
US6797548B2 (en) 1991-06-19 2004-09-28 Semiconductor Energy Laboratory Co., Inc. Electro-optical device and thin film transistor and method for forming the same
US6756258B2 (en) 1991-06-19 2004-06-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JPH06104432A (en) * 1992-09-18 1994-04-15 Semiconductor Energy Lab Co Ltd Film-shaped semiconductor device and its manufacture
US6475839B2 (en) 1993-11-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing of TFT device by backside laser irradiation
US6218678B1 (en) 1993-11-05 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6617612B2 (en) * 1993-11-05 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a semiconductor integrated circuit
JPH07135324A (en) * 1993-11-05 1995-05-23 Semiconductor Energy Lab Co Ltd Thin film semiconductor integrated circuit
US6624445B2 (en) 1993-12-22 2003-09-23 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method of manufacturing the same
JPH07183535A (en) * 1993-12-22 1995-07-21 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPH07183536A (en) * 1993-12-22 1995-07-21 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
US6955954B2 (en) 1993-12-22 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6288412B1 (en) 1994-01-26 2001-09-11 Sanyo Electric Co., Ltd. Thin film transistors for display devices having two polysilicon active layers of different thicknesses
US6849482B2 (en) 1999-02-12 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
JP2003168691A (en) * 2001-11-30 2003-06-13 Fujitsu Ltd Method for manufacturing semiconductor device
JPWO2003088331A1 (en) * 2002-04-15 2005-08-25 株式会社 液晶先端技術開発センター SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR THIN FILMS WITH DIFFERENT CRYSTALLINES, ITS SUBSTRATE, AND ITS MANUFACTURING METHOD
JP4616557B2 (en) * 2002-04-15 2011-01-19 株式会社 日立ディスプレイズ Thin film semiconductor device substrate manufacturing method and liquid crystal display device manufacturing method using the same

Also Published As

Publication number Publication date
JP2507464B2 (en) 1996-06-12

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