JPS6445162A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6445162A JPS6445162A JP20096087A JP20096087A JPS6445162A JP S6445162 A JPS6445162 A JP S6445162A JP 20096087 A JP20096087 A JP 20096087A JP 20096087 A JP20096087 A JP 20096087A JP S6445162 A JPS6445162 A JP S6445162A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor films
- thin film
- film transistors
- recrystallizing
- isolatedly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To enable multiple transistor circuits to be composed economically with high precision by a method wherein a part of semiconductor films is heated up to the recrystallizing temperature or more by a local heater to form thin film transistors after recrystallizing said transistor films. CONSTITUTION:Polycrystalline or amorphous semiconductor films are isolatedly composed in multiple regions on an insulating substrate 1. Then, at least a part of the isolatedly composed semiconductor films is heated by a local heater up to the recrystallizing temperature or more to recrystallize the semiconductor films 2. Later, thin film transistors are formed on respective semiconductor films 2, 3 in the multiple regions. Consequently, the thin film transistors can be prevented from melting down in the lateral direction in case of recrystallization due to beam irradiation. Through these procedures, multiple transistor circuits in different characteristics can be formed in high throughput with high precision within the same substrate 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62200960A JP2507464B2 (en) | 1987-08-13 | 1987-08-13 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62200960A JP2507464B2 (en) | 1987-08-13 | 1987-08-13 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6445162A true JPS6445162A (en) | 1989-02-17 |
JP2507464B2 JP2507464B2 (en) | 1996-06-12 |
Family
ID=16433171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62200960A Expired - Lifetime JP2507464B2 (en) | 1987-08-13 | 1987-08-13 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2507464B2 (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5247375A (en) * | 1990-03-09 | 1993-09-21 | Hitachi, Ltd. | Display device, manufacturing method thereof and display panel |
JPH06104432A (en) * | 1992-09-18 | 1994-04-15 | Semiconductor Energy Lab Co Ltd | Film-shaped semiconductor device and its manufacture |
JPH07135324A (en) * | 1993-11-05 | 1995-05-23 | Semiconductor Energy Lab Co Ltd | Thin film semiconductor integrated circuit |
JPH07183536A (en) * | 1993-12-22 | 1995-07-21 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacture thereof |
JPH07183535A (en) * | 1993-12-22 | 1995-07-21 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacture thereof |
US6218678B1 (en) | 1993-11-05 | 2001-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6288412B1 (en) | 1994-01-26 | 2001-09-11 | Sanyo Electric Co., Ltd. | Thin film transistors for display devices having two polysilicon active layers of different thicknesses |
US6335213B1 (en) | 1991-06-19 | 2002-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and thin film transistor and method for forming the same |
JP2003168691A (en) * | 2001-11-30 | 2003-06-13 | Fujitsu Ltd | Method for manufacturing semiconductor device |
US6624445B2 (en) | 1993-12-22 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method of manufacturing the same |
US6849482B2 (en) | 1999-02-12 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method of forming the same |
JPWO2003088331A1 (en) * | 2002-04-15 | 2005-08-25 | 株式会社 液晶先端技術開発センター | SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR THIN FILMS WITH DIFFERENT CRYSTALLINES, ITS SUBSTRATE, AND ITS MANUFACTURING METHOD |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS584180A (en) * | 1981-06-30 | 1983-01-11 | セイコーエプソン株式会社 | Active matrix substrate |
-
1987
- 1987-08-13 JP JP62200960A patent/JP2507464B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS584180A (en) * | 1981-06-30 | 1983-01-11 | セイコーエプソン株式会社 | Active matrix substrate |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5247375A (en) * | 1990-03-09 | 1993-09-21 | Hitachi, Ltd. | Display device, manufacturing method thereof and display panel |
US6335213B1 (en) | 1991-06-19 | 2002-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and thin film transistor and method for forming the same |
US6847064B2 (en) | 1991-06-19 | 2005-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a thin film transistor |
US6797548B2 (en) | 1991-06-19 | 2004-09-28 | Semiconductor Energy Laboratory Co., Inc. | Electro-optical device and thin film transistor and method for forming the same |
US6756258B2 (en) | 1991-06-19 | 2004-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
JPH06104432A (en) * | 1992-09-18 | 1994-04-15 | Semiconductor Energy Lab Co Ltd | Film-shaped semiconductor device and its manufacture |
US6475839B2 (en) | 1993-11-05 | 2002-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing of TFT device by backside laser irradiation |
US6218678B1 (en) | 1993-11-05 | 2001-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6617612B2 (en) * | 1993-11-05 | 2003-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a semiconductor integrated circuit |
JPH07135324A (en) * | 1993-11-05 | 1995-05-23 | Semiconductor Energy Lab Co Ltd | Thin film semiconductor integrated circuit |
US6624445B2 (en) | 1993-12-22 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method of manufacturing the same |
JPH07183535A (en) * | 1993-12-22 | 1995-07-21 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacture thereof |
JPH07183536A (en) * | 1993-12-22 | 1995-07-21 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacture thereof |
US6955954B2 (en) | 1993-12-22 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US6288412B1 (en) | 1994-01-26 | 2001-09-11 | Sanyo Electric Co., Ltd. | Thin film transistors for display devices having two polysilicon active layers of different thicknesses |
US6849482B2 (en) | 1999-02-12 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method of forming the same |
JP2003168691A (en) * | 2001-11-30 | 2003-06-13 | Fujitsu Ltd | Method for manufacturing semiconductor device |
JPWO2003088331A1 (en) * | 2002-04-15 | 2005-08-25 | 株式会社 液晶先端技術開発センター | SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR THIN FILMS WITH DIFFERENT CRYSTALLINES, ITS SUBSTRATE, AND ITS MANUFACTURING METHOD |
JP4616557B2 (en) * | 2002-04-15 | 2011-01-19 | 株式会社 日立ディスプレイズ | Thin film semiconductor device substrate manufacturing method and liquid crystal display device manufacturing method using the same |
Also Published As
Publication number | Publication date |
---|---|
JP2507464B2 (en) | 1996-06-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 12 Free format text: PAYMENT UNTIL: 20080402 |