JPS57176777A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS57176777A JPS57176777A JP6209881A JP6209881A JPS57176777A JP S57176777 A JPS57176777 A JP S57176777A JP 6209881 A JP6209881 A JP 6209881A JP 6209881 A JP6209881 A JP 6209881A JP S57176777 A JPS57176777 A JP S57176777A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- electrode
- semiconductor material
- mesfet
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910000765 intermetallic Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To improve high frequency characteristics in an MESFET wherein the gate electrode on the semiconductor material layer on a substrate and both sides of the gate electrode have an insulating compound film for themselves and two ohmic electrodes are provided. CONSTITUTION:A gate electrode 5 is directly provided on the semiconductor material operation layer 2 on a substrate 1. The metallic compound film 5' for the gate electrode is provided on the gate electrode 5. A source electrode 3 and a drain electrode 4 are provided on the semiconductor material operation layer 2. Thus the MESFET is obtained. In this structure, the distance between the source electrode and the gate electrode, the distance between the drain electrode and the gate electrode, and the width of the gate electrode are minutely controlled in the submicron range. Thus the excellent high frequency characteristics can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6209881A JPS57176777A (en) | 1981-04-23 | 1981-04-23 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6209881A JPS57176777A (en) | 1981-04-23 | 1981-04-23 | Semiconductor device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57176777A true JPS57176777A (en) | 1982-10-30 |
| JPS6410953B2 JPS6410953B2 (en) | 1989-02-22 |
Family
ID=13190228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6209881A Granted JPS57176777A (en) | 1981-04-23 | 1981-04-23 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57176777A (en) |
-
1981
- 1981-04-23 JP JP6209881A patent/JPS57176777A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6410953B2 (en) | 1989-02-22 |
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