JPS57161057A - Chemical vapor phase growth device using plasma - Google Patents

Chemical vapor phase growth device using plasma

Info

Publication number
JPS57161057A
JPS57161057A JP4912681A JP4912681A JPS57161057A JP S57161057 A JPS57161057 A JP S57161057A JP 4912681 A JP4912681 A JP 4912681A JP 4912681 A JP4912681 A JP 4912681A JP S57161057 A JPS57161057 A JP S57161057A
Authority
JP
Japan
Prior art keywords
plasma
electrode
high frequency
films
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4912681A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6124467B2 (enrdf_load_stackoverflow
Inventor
Hideo Kotani
Kazuo Mizuguchi
Yoshikazu Obayashi
Masahiko Denda
Shinichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4912681A priority Critical patent/JPS57161057A/ja
Publication of JPS57161057A publication Critical patent/JPS57161057A/ja
Publication of JPS6124467B2 publication Critical patent/JPS6124467B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP4912681A 1981-03-30 1981-03-30 Chemical vapor phase growth device using plasma Granted JPS57161057A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4912681A JPS57161057A (en) 1981-03-30 1981-03-30 Chemical vapor phase growth device using plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4912681A JPS57161057A (en) 1981-03-30 1981-03-30 Chemical vapor phase growth device using plasma

Publications (2)

Publication Number Publication Date
JPS57161057A true JPS57161057A (en) 1982-10-04
JPS6124467B2 JPS6124467B2 (enrdf_load_stackoverflow) 1986-06-11

Family

ID=12822367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4912681A Granted JPS57161057A (en) 1981-03-30 1981-03-30 Chemical vapor phase growth device using plasma

Country Status (1)

Country Link
JP (1) JPS57161057A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555362A1 (fr) * 1983-11-17 1985-05-24 France Etat Procede et dispositif de traitement d'un materiau semi-conducteur, par plasma
JPS61179872A (ja) * 1984-10-25 1986-08-12 アプライド　マテリアルズ　インコ−ポレ−テツド マグネトロンエンハンスプラズマ補助式化学蒸着のための装置ならびに方法
JPS61245521A (ja) * 1985-04-23 1986-10-31 Fujitsu Ltd アルミニウム膜の成長方法
JPS62243772A (ja) * 1986-04-15 1987-10-24 Seiko Instr & Electronics Ltd 薄膜合成装置
JPS6389671A (ja) * 1986-10-03 1988-04-20 Ulvac Corp 磁場励起式プラズマｃｖｄ装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926184A (enrdf_load_stackoverflow) * 1971-09-07 1974-03-08
JPS5244704A (en) * 1975-10-06 1977-04-08 Nippon Spindle Mfg Co Ltd Air supply equipment for melting furnace
JPS538377A (en) * 1976-07-12 1978-01-25 Hitachi Ltd Apparatus for high frequency sputtering
JPS5435172A (en) * 1977-08-24 1979-03-15 Anelva Corp Chemical reactor using electric discharge
JPS5558658U (enrdf_load_stackoverflow) * 1978-10-16 1980-04-21
JPS5615838A (en) * 1979-07-19 1981-02-16 Fuji Electric Co Ltd Gaseous phase growth device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926184A (enrdf_load_stackoverflow) * 1971-09-07 1974-03-08
JPS5244704A (en) * 1975-10-06 1977-04-08 Nippon Spindle Mfg Co Ltd Air supply equipment for melting furnace
JPS538377A (en) * 1976-07-12 1978-01-25 Hitachi Ltd Apparatus for high frequency sputtering
JPS5435172A (en) * 1977-08-24 1979-03-15 Anelva Corp Chemical reactor using electric discharge
JPS5558658U (enrdf_load_stackoverflow) * 1978-10-16 1980-04-21
JPS5615838A (en) * 1979-07-19 1981-02-16 Fuji Electric Co Ltd Gaseous phase growth device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555362A1 (fr) * 1983-11-17 1985-05-24 France Etat Procede et dispositif de traitement d'un materiau semi-conducteur, par plasma
JPS61179872A (ja) * 1984-10-25 1986-08-12 アプライド　マテリアルズ　インコ−ポレ−テツド マグネトロンエンハンスプラズマ補助式化学蒸着のための装置ならびに方法
JPS61245521A (ja) * 1985-04-23 1986-10-31 Fujitsu Ltd アルミニウム膜の成長方法
JPS62243772A (ja) * 1986-04-15 1987-10-24 Seiko Instr & Electronics Ltd 薄膜合成装置
JPS6389671A (ja) * 1986-10-03 1988-04-20 Ulvac Corp 磁場励起式プラズマｃｖｄ装置

Also Published As

Publication number Publication date
JPS6124467B2 (enrdf_load_stackoverflow) 1986-06-11

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