JPS57155765A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57155765A
JPS57155765A JP56041329A JP4132981A JPS57155765A JP S57155765 A JPS57155765 A JP S57155765A JP 56041329 A JP56041329 A JP 56041329A JP 4132981 A JP4132981 A JP 4132981A JP S57155765 A JPS57155765 A JP S57155765A
Authority
JP
Japan
Prior art keywords
layer
polysilicon
contact
lsi
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56041329A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6362107B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56041329A priority Critical patent/JPS57155765A/ja
Publication of JPS57155765A publication Critical patent/JPS57155765A/ja
Publication of JPS6362107B2 publication Critical patent/JPS6362107B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56041329A 1981-03-20 1981-03-20 Manufacture of semiconductor device Granted JPS57155765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56041329A JPS57155765A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56041329A JPS57155765A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57155765A true JPS57155765A (en) 1982-09-25
JPS6362107B2 JPS6362107B2 (enrdf_load_stackoverflow) 1988-12-01

Family

ID=12605474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56041329A Granted JPS57155765A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57155765A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837953A (ja) * 1981-08-31 1983-03-05 Toshiba Corp 積層半導体集積回路装置
JPS5996761A (ja) * 1982-11-25 1984-06-04 Mitsubishi Electric Corp 多段構造半導体装置
JPS59129441A (ja) * 1983-01-13 1984-07-25 Fujitsu Ltd 半導体装置の製造方法
JPS627112A (ja) * 1985-07-03 1987-01-14 Agency Of Ind Science & Technol 半導体単結晶層の製造方法
WO2003010804A1 (fr) * 2001-07-25 2003-02-06 Seiko Epson Corporation Procede destine a produire un film fin a semi-conducteur, procede destine a produire un dispositif a semi-conducteur, dispositif a semi-conducteur, circuit integre, dispositif electro-optique et appareil electronique
JP2008218468A (ja) * 2007-02-28 2008-09-18 Univ Of Ryukyus ３次元集積回路装置及びその製造方法
JP2010226131A (ja) * 2010-05-31 2010-10-07 Univ Of Ryukyus ３次元集積回路装置及びその製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837953A (ja) * 1981-08-31 1983-03-05 Toshiba Corp 積層半導体集積回路装置
JPS5996761A (ja) * 1982-11-25 1984-06-04 Mitsubishi Electric Corp 多段構造半導体装置
JPS59129441A (ja) * 1983-01-13 1984-07-25 Fujitsu Ltd 半導体装置の製造方法
JPS627112A (ja) * 1985-07-03 1987-01-14 Agency Of Ind Science & Technol 半導体単結晶層の製造方法
WO2003010804A1 (fr) * 2001-07-25 2003-02-06 Seiko Epson Corporation Procede destine a produire un film fin a semi-conducteur, procede destine a produire un dispositif a semi-conducteur, dispositif a semi-conducteur, circuit integre, dispositif electro-optique et appareil electronique
US6940143B2 (en) 2001-07-25 2005-09-06 Seiko Epson Corporation Semiconductor thin-film manufacturing method, semiconductor device manufacturing method, semiconductor device, integrated circuit, electro-optical device, and electronic appliance
CN1326205C (zh) * 2001-07-25 2007-07-11 精工爱普生株式会社 半导体薄膜及半导体装置的制造方法、半导体装置、集成电路、电光学装置及电子机器
JP2008218468A (ja) * 2007-02-28 2008-09-18 Univ Of Ryukyus ３次元集積回路装置及びその製造方法
JP2010226131A (ja) * 2010-05-31 2010-10-07 Univ Of Ryukyus ３次元集積回路装置及びその製造方法

Also Published As

Publication number Publication date
JPS6362107B2 (enrdf_load_stackoverflow) 1988-12-01

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