JPS5715469A - Thin film transistor for transmission type display panel and manufacture thereof - Google Patents

Thin film transistor for transmission type display panel and manufacture thereof

Info

Publication number
JPS5715469A
JPS5715469A JP9088480A JP9088480A JPS5715469A JP S5715469 A JPS5715469 A JP S5715469A JP 9088480 A JP9088480 A JP 9088480A JP 9088480 A JP9088480 A JP 9088480A JP S5715469 A JPS5715469 A JP S5715469A
Authority
JP
Japan
Prior art keywords
layer
fet
electrode
mask
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9088480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6349914B2 (enExample
Inventor
Mamoru Takeda
Hiroshi Yamazoe
Isao Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9088480A priority Critical patent/JPS5715469A/ja
Publication of JPS5715469A publication Critical patent/JPS5715469A/ja
Publication of JPS6349914B2 publication Critical patent/JPS6349914B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
JP9088480A 1980-07-02 1980-07-02 Thin film transistor for transmission type display panel and manufacture thereof Granted JPS5715469A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9088480A JPS5715469A (en) 1980-07-02 1980-07-02 Thin film transistor for transmission type display panel and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9088480A JPS5715469A (en) 1980-07-02 1980-07-02 Thin film transistor for transmission type display panel and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5715469A true JPS5715469A (en) 1982-01-26
JPS6349914B2 JPS6349914B2 (enExample) 1988-10-06

Family

ID=14010856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9088480A Granted JPS5715469A (en) 1980-07-02 1980-07-02 Thin film transistor for transmission type display panel and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5715469A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5560255A (en) * 1978-10-31 1980-05-07 Nec Home Electronics Ltd Helical post-acceleration type cathode ray tube
JPS5940582A (ja) * 1982-08-30 1984-03-06 Seiko Epson Corp 半導体装置
JPS5965882A (ja) * 1982-10-06 1984-04-14 ホシデン株式会社 液晶表示器
JPS6083373A (ja) * 1983-10-14 1985-05-11 Nec Corp 薄膜トランジスタアレイとその製造方法
JPS60164790A (ja) * 1984-02-06 1985-08-27 株式会社半導体エネルギー研究所 固体表示装置
JPS61138285A (ja) * 1984-12-10 1986-06-25 ホシデン株式会社 液晶表示素子
JPS61141478A (ja) * 1984-12-14 1986-06-28 株式会社東芝 アクテイブマトリツクス型表示装置用表示電極アレイとその製造方法
JPS61182266A (ja) * 1985-02-08 1986-08-14 Seiko Instr & Electronics Ltd 薄膜トランジスタ装置の製造方法
JPS62276526A (ja) * 1986-05-26 1987-12-01 Casio Comput Co Ltd アクテイブマトリクス液晶表示装置の製造方法
JPS6444419A (en) * 1987-08-11 1989-02-16 Fujitsu Ltd Liquid crystal display panel
JPH0855997A (ja) * 1995-07-24 1996-02-27 Toshiba Corp 薄膜半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4204217A (en) * 1976-10-18 1980-05-20 Rca Corporation Transistor using liquid crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4204217A (en) * 1976-10-18 1980-05-20 Rca Corporation Transistor using liquid crystal

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5560255A (en) * 1978-10-31 1980-05-07 Nec Home Electronics Ltd Helical post-acceleration type cathode ray tube
JPS5940582A (ja) * 1982-08-30 1984-03-06 Seiko Epson Corp 半導体装置
JPS5965882A (ja) * 1982-10-06 1984-04-14 ホシデン株式会社 液晶表示器
JPS6083373A (ja) * 1983-10-14 1985-05-11 Nec Corp 薄膜トランジスタアレイとその製造方法
JPS60164790A (ja) * 1984-02-06 1985-08-27 株式会社半導体エネルギー研究所 固体表示装置
JPS61138285A (ja) * 1984-12-10 1986-06-25 ホシデン株式会社 液晶表示素子
JPS61141478A (ja) * 1984-12-14 1986-06-28 株式会社東芝 アクテイブマトリツクス型表示装置用表示電極アレイとその製造方法
JPS61182266A (ja) * 1985-02-08 1986-08-14 Seiko Instr & Electronics Ltd 薄膜トランジスタ装置の製造方法
JPS62276526A (ja) * 1986-05-26 1987-12-01 Casio Comput Co Ltd アクテイブマトリクス液晶表示装置の製造方法
JPS6444419A (en) * 1987-08-11 1989-02-16 Fujitsu Ltd Liquid crystal display panel
JPH0855997A (ja) * 1995-07-24 1996-02-27 Toshiba Corp 薄膜半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6349914B2 (enExample) 1988-10-06

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