JPS57149772A - Gate turn off thyristor - Google Patents

Gate turn off thyristor

Info

Publication number
JPS57149772A
JPS57149772A JP56035826A JP3582681A JPS57149772A JP S57149772 A JPS57149772 A JP S57149772A JP 56035826 A JP56035826 A JP 56035826A JP 3582681 A JP3582681 A JP 3582681A JP S57149772 A JPS57149772 A JP S57149772A
Authority
JP
Japan
Prior art keywords
layers
layer
gate
cathode
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56035826A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136259B2 (enrdf_load_stackoverflow
Inventor
Tetsuo Sueoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp, Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Corp
Priority to JP56035826A priority Critical patent/JPS57149772A/ja
Publication of JPS57149772A publication Critical patent/JPS57149772A/ja
Publication of JPH0136259B2 publication Critical patent/JPH0136259B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP56035826A 1981-03-12 1981-03-12 Gate turn off thyristor Granted JPS57149772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56035826A JPS57149772A (en) 1981-03-12 1981-03-12 Gate turn off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56035826A JPS57149772A (en) 1981-03-12 1981-03-12 Gate turn off thyristor

Publications (2)

Publication Number Publication Date
JPS57149772A true JPS57149772A (en) 1982-09-16
JPH0136259B2 JPH0136259B2 (enrdf_load_stackoverflow) 1989-07-31

Family

ID=12452753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56035826A Granted JPS57149772A (en) 1981-03-12 1981-03-12 Gate turn off thyristor

Country Status (1)

Country Link
JP (1) JPS57149772A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60166161U (ja) * 1984-04-11 1985-11-05 株式会社明電舎 Ｇｔｏサイリスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60166161U (ja) * 1984-04-11 1985-11-05 株式会社明電舎 Ｇｔｏサイリスタ

Also Published As

Publication number Publication date
JPH0136259B2 (enrdf_load_stackoverflow) 1989-07-31

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