JPH0136259B2 - - Google Patents
Info
- Publication number
- JPH0136259B2 JPH0136259B2 JP56035826A JP3582681A JPH0136259B2 JP H0136259 B2 JPH0136259 B2 JP H0136259B2 JP 56035826 A JP56035826 A JP 56035826A JP 3582681 A JP3582681 A JP 3582681A JP H0136259 B2 JPH0136259 B2 JP H0136259B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate
- cathode
- thyristor
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/192—Base regions of thyristors
- H10D62/206—Cathode base regions of thyristors
Landscapes
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56035826A JPS57149772A (en) | 1981-03-12 | 1981-03-12 | Gate turn off thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56035826A JPS57149772A (en) | 1981-03-12 | 1981-03-12 | Gate turn off thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57149772A JPS57149772A (en) | 1982-09-16 |
JPH0136259B2 true JPH0136259B2 (enrdf_load_stackoverflow) | 1989-07-31 |
Family
ID=12452753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56035826A Granted JPS57149772A (en) | 1981-03-12 | 1981-03-12 | Gate turn off thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57149772A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60166161U (ja) * | 1984-04-11 | 1985-11-05 | 株式会社明電舎 | Gtoサイリスタ |
-
1981
- 1981-03-12 JP JP56035826A patent/JPS57149772A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57149772A (en) | 1982-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4717940A (en) | MIS controlled gate turn-off thyristor | |
JPH0467343B2 (enrdf_load_stackoverflow) | ||
JPH05347413A (ja) | 半導体装置の製造方法 | |
JPH01125979A (ja) | 絶縁ゲート型バイポーラトランジスタ | |
JPH0691263B2 (ja) | 半導体装置の製造方法 | |
JPH08228001A (ja) | 半導体装置及びその製造方法 | |
EP0064613A2 (en) | Semiconductor device having a plurality of element units operable in parallel | |
JPH0578949B2 (enrdf_load_stackoverflow) | ||
JP2513640B2 (ja) | 導電変調型mosfet | |
JPH0136259B2 (enrdf_load_stackoverflow) | ||
JPH06112494A (ja) | 絶縁ゲート型バイポーラトランジスタ | |
JPS61147577A (ja) | 相補型半導体装置 | |
JPS6042624B2 (ja) | 電界効果型スイツチング素子 | |
JPH0992828A (ja) | 絶縁ゲート型バイポーラトランジスタ及びその製造方法 | |
JPS61208268A (ja) | 伝導度変調型半導体装置 | |
JPS62283669A (ja) | 導電変調型mosfet | |
JP3277701B2 (ja) | 横型絶縁ゲートバイポーラトランジスタ | |
JPS6245710B2 (enrdf_load_stackoverflow) | ||
JPH045274B2 (enrdf_load_stackoverflow) | ||
JPS61182259A (ja) | ゲ−トタ−ンオフサイリスタ | |
JPH0136711B2 (enrdf_load_stackoverflow) | ||
JP2718911B2 (ja) | 導電変調型mosfet | |
JPH0416443Y2 (enrdf_load_stackoverflow) | ||
JP3017783B2 (ja) | 導電変調型mosfet | |
JPS6231166A (ja) | ゲ−ト埋込形半導体素子 |