JPS57141968A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS57141968A
JPS57141968A JP56103073A JP10307381A JPS57141968A JP S57141968 A JPS57141968 A JP S57141968A JP 56103073 A JP56103073 A JP 56103073A JP 10307381 A JP10307381 A JP 10307381A JP S57141968 A JPS57141968 A JP S57141968A
Authority
JP
Japan
Prior art keywords
film
oxide film
openings
electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56103073A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6118350B2 (enrdf_load_stackoverflow
Inventor
Taiichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56103073A priority Critical patent/JPS57141968A/ja
Publication of JPS57141968A publication Critical patent/JPS57141968A/ja
Publication of JPS6118350B2 publication Critical patent/JPS6118350B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
JP56103073A 1981-07-01 1981-07-01 Insulated gate type field effect transistor Granted JPS57141968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56103073A JPS57141968A (en) 1981-07-01 1981-07-01 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56103073A JPS57141968A (en) 1981-07-01 1981-07-01 Insulated gate type field effect transistor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP47010360A Division JPS58190B2 (ja) 1972-01-27 1972-01-27 ゼツエンゲ−トガタデンカイコウカトランジスタ

Publications (2)

Publication Number Publication Date
JPS57141968A true JPS57141968A (en) 1982-09-02
JPS6118350B2 JPS6118350B2 (enrdf_load_stackoverflow) 1986-05-12

Family

ID=14344468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56103073A Granted JPS57141968A (en) 1981-07-01 1981-07-01 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS57141968A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161466A (ja) * 1984-09-03 1986-03-29 Fujitsu Ltd 半導体装置の製法
US6323524B1 (en) * 1997-05-20 2001-11-27 Advanced Micro Devices, Inc. Semiconductor device having a vertical active region and method of manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161466A (ja) * 1984-09-03 1986-03-29 Fujitsu Ltd 半導体装置の製法
US6323524B1 (en) * 1997-05-20 2001-11-27 Advanced Micro Devices, Inc. Semiconductor device having a vertical active region and method of manufacture thereof

Also Published As

Publication number Publication date
JPS6118350B2 (enrdf_load_stackoverflow) 1986-05-12

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