JPS57134959A - C-mos type semiconductor integrated circuit - Google Patents
C-mos type semiconductor integrated circuitInfo
- Publication number
- JPS57134959A JPS57134959A JP56021103A JP2110381A JPS57134959A JP S57134959 A JPS57134959 A JP S57134959A JP 56021103 A JP56021103 A JP 56021103A JP 2110381 A JP2110381 A JP 2110381A JP S57134959 A JPS57134959 A JP S57134959A
- Authority
- JP
- Japan
- Prior art keywords
- type
- integrated circuit
- semiconductor integrated
- substrate
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56021103A JPS57134959A (en) | 1981-02-16 | 1981-02-16 | C-mos type semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56021103A JPS57134959A (en) | 1981-02-16 | 1981-02-16 | C-mos type semiconductor integrated circuit |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62030810A Division JPS6325964A (ja) | 1987-02-13 | 1987-02-13 | C−mos型半導体集積回路装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57134959A true JPS57134959A (en) | 1982-08-20 |
Family
ID=12045532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56021103A Pending JPS57134959A (en) | 1981-02-16 | 1981-02-16 | C-mos type semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57134959A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62286268A (ja) * | 1986-06-04 | 1987-12-12 | Sharp Corp | 半導体集積回路装置 |
-
1981
- 1981-02-16 JP JP56021103A patent/JPS57134959A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62286268A (ja) * | 1986-06-04 | 1987-12-12 | Sharp Corp | 半導体集積回路装置 |
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