JPS57132387A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS57132387A
JPS57132387A JP1792681A JP1792681A JPS57132387A JP S57132387 A JPS57132387 A JP S57132387A JP 1792681 A JP1792681 A JP 1792681A JP 1792681 A JP1792681 A JP 1792681A JP S57132387 A JPS57132387 A JP S57132387A
Authority
JP
Japan
Prior art keywords
layer
clad layer
substrate
semiconductor
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1792681A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0358191B2 (enrdf_load_stackoverflow
Inventor
Takashi Matsuoka
Haruo Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1792681A priority Critical patent/JPS57132387A/ja
Publication of JPS57132387A publication Critical patent/JPS57132387A/ja
Publication of JPH0358191B2 publication Critical patent/JPH0358191B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Semiconductor Lasers (AREA)
JP1792681A 1981-02-09 1981-02-09 Semiconductor laser device Granted JPS57132387A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1792681A JPS57132387A (en) 1981-02-09 1981-02-09 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1792681A JPS57132387A (en) 1981-02-09 1981-02-09 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS57132387A true JPS57132387A (en) 1982-08-16
JPH0358191B2 JPH0358191B2 (enrdf_load_stackoverflow) 1991-09-04

Family

ID=11957368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1792681A Granted JPS57132387A (en) 1981-02-09 1981-02-09 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS57132387A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198689A (en) * 1981-05-30 1982-12-06 Matsushita Electric Ind Co Ltd Semiconductor device
DE3728568A1 (de) * 1987-08-27 1989-03-16 Telefunken Electronic Gmbh Halbleiterlaseranordnung
US10833476B2 (en) * 2016-12-22 2020-11-10 Osram Oled Gmbh Surface-mountable semiconductor laser, arrangement with such a semiconductor laser and operating method for same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51138393A (en) * 1975-05-26 1976-11-29 Fujitsu Ltd Semiconductor light emission device
JPS51138394A (en) * 1975-05-26 1976-11-29 Fujitsu Ltd Semiconductor device
JPS55126680U (enrdf_load_stackoverflow) * 1979-03-05 1980-09-08
JPS55117295A (en) * 1979-03-02 1980-09-09 Hitachi Ltd Semiconductor light emitting element and fabricating the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51138393A (en) * 1975-05-26 1976-11-29 Fujitsu Ltd Semiconductor light emission device
JPS51138394A (en) * 1975-05-26 1976-11-29 Fujitsu Ltd Semiconductor device
JPS55117295A (en) * 1979-03-02 1980-09-09 Hitachi Ltd Semiconductor light emitting element and fabricating the same
JPS55126680U (enrdf_load_stackoverflow) * 1979-03-05 1980-09-08

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198689A (en) * 1981-05-30 1982-12-06 Matsushita Electric Ind Co Ltd Semiconductor device
DE3728568A1 (de) * 1987-08-27 1989-03-16 Telefunken Electronic Gmbh Halbleiterlaseranordnung
US10833476B2 (en) * 2016-12-22 2020-11-10 Osram Oled Gmbh Surface-mountable semiconductor laser, arrangement with such a semiconductor laser and operating method for same

Also Published As

Publication number Publication date
JPH0358191B2 (enrdf_load_stackoverflow) 1991-09-04

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