KR940027241A - 반도체 레이져 소자 및 그 제조방법 - Google Patents

반도체 레이져 소자 및 그 제조방법 Download PDF

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KR940027241A
KR940027241A KR1019930009357A KR930009357A KR940027241A KR 940027241 A KR940027241 A KR 940027241A KR 1019930009357 A KR1019930009357 A KR 1019930009357A KR 930009357 A KR930009357 A KR 930009357A KR 940027241 A KR940027241 A KR 940027241A
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layer
ridge
cladding layer
semiconductor laser
laser device
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KR1019930009357A
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KR100255689B1 (ko
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이상호
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김광호
삼성전자 주식회사
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Priority to US08/528,862 priority patent/US5612251A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

본 발명은 반도체 레이저 소자에 관한 것이다.
본 발명 반도체 레이저 소자는 그 몸체 중간에 소정 높이의 리지가 마련된 메사구조의 크래딩 레이어와, 상기 상부 크래딩 레이어의 상부에 형성되는 것으로 상기 리지의 상단면에 대응되는 부분이 결여된 절연층과, 상기 절연층의 상부에 형성되며, 상기 절연층의 결여부를 통해 상기 상부 크래딩 레이어와 전기적으로 접속되는 상부 전극을 구비하며, 상기 리지의 양측면에는 소정 두께의 이온 주입에 의한 전류 제한층이 마련되어 있다. 따라서 리지의 폭을 자유롭게 변경할 수 있고, 또한 반복적 재현성이 높은 장점이 나타난다.

Description

반도체 레이저 소자 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 3 내지 제 6 도는 본 발명 제조방법에 의한 단계적 반도체 레이저 소자의 제조 순서도.

Claims (3)

  1. 기판과 레이저가 발진하는 활성영역층과, 상기 활성영역층과 기판의 사이에 마련되는 하부 크래딩 레이어, 상기 활성영역층의 상부에 마련되며, 그 몸체 중간에 소정 높이의 리지가 마련된 메사구조의 상부 크래딩 레이어와, 상기 상부 크래딩 레이어의 상부에 형성되는 것으로 상기 리지의 상단면에 대응되는 부분이 결여된 절연층과, 상기 절연층의 상부에 형성되며, 상기 절연층의 결여부를 통해 상기 상부 크래딩레이어와 전기적으로 접속되는 상부 전극, 상기 상부 전극에 대응되는 것으로 상기 기판의 저면에 형성되는 하부 전극을 구비하는 반도체 레이저 소자에 있어서, 상기 리지의 양측면에 소정 두께의 이온 공급에 의한 전류 제한층이 마련되어 상기 상부 전극으로부터의 전류 이동 경로가 상기 리지의 폭에 비해 좁게 마련된 것을 특징으로 하는 반도체 레이저 소자.
  2. 제 1 항에 있어서, 상기 리지는 상기 상부 크래딩레이어, ㉿핑 레이어, 그리고 p+-GaAs의 적층을 갖는 것을 특징으로 하는 반도체 레이저 소자.
  3. 기판에 하나 혹은 다수의 활성영역층과 상기 활성영역층의 상하에 마련되는 상하부 크래딩 레이어를 순차적으로 형성하는 단계, 상기 크래딩 레이어의 위에 적어도 하나의 콘택트층을 형성하는 단계 상기 콘택트층의 표면으로부터 상기 상부 크래딩 레이어의 표면 소정깊이에까지 소정패턴으로 전류제한 영역을 형성하는 단계, 상기 상부 크래딩 레이어의 전류제한 영역을 소정 패턴으로 에칭하여 그 양측면에 소정 두께의 전류제한층이 마련된 소정높이의 리지를 형성하는 단계, 상기 리지의 상단면에 대응하는 부위를 제외한 상기 상부 크래딩 레이어와 상기 전류제한층의 위에 소정 두께로 절연층을 형성하는 단계, 상기 절연층의 상부에 전극을 형성하여 상기 상부 크래딩 레이어의 상기 전극과 전기적으로 접속되게 하는 단계를 포함하는 것을 특징으로 하는 반도체 레이저 소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930009357A 1993-05-27 1993-05-27 반도체 레이져 소자 및 그 제조방법 KR100255689B1 (ko)

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KR1019930009357A KR100255689B1 (ko) 1993-05-27 1993-05-27 반도체 레이져 소자 및 그 제조방법
US08/528,862 US5612251A (en) 1993-05-27 1995-09-15 Manufacturing method and device for a polycrystalline silicon

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