JPS5712553A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5712553A JPS5712553A JP8661880A JP8661880A JPS5712553A JP S5712553 A JPS5712553 A JP S5712553A JP 8661880 A JP8661880 A JP 8661880A JP 8661880 A JP8661880 A JP 8661880A JP S5712553 A JPS5712553 A JP S5712553A
- Authority
- JP
- Japan
- Prior art keywords
- hexagonal
- meshes
- triangular
- drains
- crossed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8661880A JPS5712553A (en) | 1980-06-27 | 1980-06-27 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8661880A JPS5712553A (en) | 1980-06-27 | 1980-06-27 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5712553A true JPS5712553A (en) | 1982-01-22 |
Family
ID=13892005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8661880A Pending JPS5712553A (en) | 1980-06-27 | 1980-06-27 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5712553A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6394669A (ja) * | 1986-10-08 | 1988-04-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS63104466A (ja) * | 1986-10-22 | 1988-05-09 | Mitsubishi Electric Corp | Mos型ダイナミツクram |
JPH02161776A (ja) * | 1988-12-15 | 1990-06-21 | Toshiba Corp | 差動増幅回路 |
US5025296A (en) * | 1988-02-29 | 1991-06-18 | Motorola, Inc. | Center tapped FET |
JPH03167879A (ja) * | 1989-11-28 | 1991-07-19 | Nissan Motor Co Ltd | 半導体装置 |
JP2005276960A (ja) * | 2004-03-24 | 2005-10-06 | Fujitsu Ltd | 横型mosトランジスタ |
-
1980
- 1980-06-27 JP JP8661880A patent/JPS5712553A/ja active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6394669A (ja) * | 1986-10-08 | 1988-04-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS63104466A (ja) * | 1986-10-22 | 1988-05-09 | Mitsubishi Electric Corp | Mos型ダイナミツクram |
US5025296A (en) * | 1988-02-29 | 1991-06-18 | Motorola, Inc. | Center tapped FET |
JPH02161776A (ja) * | 1988-12-15 | 1990-06-21 | Toshiba Corp | 差動増幅回路 |
JPH079989B2 (ja) * | 1988-12-15 | 1995-02-01 | 株式会社東芝 | 差動増幅回路 |
JPH03167879A (ja) * | 1989-11-28 | 1991-07-19 | Nissan Motor Co Ltd | 半導体装置 |
JP2005276960A (ja) * | 2004-03-24 | 2005-10-06 | Fujitsu Ltd | 横型mosトランジスタ |
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