FR2473792B1 - Procede de fabrication de piles solaires - Google Patents
Procede de fabrication de piles solairesInfo
- Publication number
- FR2473792B1 FR2473792B1 FR8100077A FR8100077A FR2473792B1 FR 2473792 B1 FR2473792 B1 FR 2473792B1 FR 8100077 A FR8100077 A FR 8100077A FR 8100077 A FR8100077 A FR 8100077A FR 2473792 B1 FR2473792 B1 FR 2473792B1
- Authority
- FR
- France
- Prior art keywords
- solar cells
- manufacturing solar
- manufacturing
- cells
- solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C45/00—Amorphous alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3000889A DE3000889C2 (de) | 1980-01-11 | 1980-01-11 | Verwendung einer um zwei Rollen umlaufenden Metallfolie zum Stranggießen von amorphem Silizium |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2473792A1 FR2473792A1 (fr) | 1981-07-17 |
FR2473792B1 true FR2473792B1 (fr) | 1985-10-25 |
Family
ID=6091885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8100077A Expired FR2473792B1 (fr) | 1980-01-11 | 1981-01-06 | Procede de fabrication de piles solaires |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE3000889C2 (fr) |
FR (1) | FR2473792B1 (fr) |
IT (1) | IT1134973B (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4400409A (en) | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
DE3128979C2 (de) * | 1981-07-22 | 1986-10-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von für Solarzellen verwendbarem Silizium |
DE3226931A1 (de) * | 1982-07-19 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum herstellen von grossflaechigen, fuer die fertigung von solarzellen verwendbaren bandfoermigen siliziumkoerpern |
DE3305933A1 (de) * | 1983-02-21 | 1984-08-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum herstellen von polykristallinen, grossflaechigen siliziumkristallkoerpern fuer solarzellen |
DE3404818A1 (de) * | 1984-02-10 | 1985-08-14 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum erzeugen eines pn- ueberganges in einem nach dem durchlaufverfahren hergestellten siliziumband |
US4663828A (en) * | 1985-10-11 | 1987-05-12 | Energy Conversion Devices, Inc. | Process and apparatus for continuous production of lightweight arrays of photovoltaic cells |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU503857B2 (en) * | 1976-10-22 | 1979-09-20 | Allied Chemical Corp. | Continuous casting of metal strip |
FR2394173A1 (fr) * | 1977-06-06 | 1979-01-05 | Thomson Csf | Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede |
DE2856795C2 (de) * | 1977-12-30 | 1984-12-06 | Noboru Prof. Sendai Tsuya | Verwendung einer Stahlschmelze für ein Verfahren zum Stranggießen eines dünnen Bandes |
DE2830522A1 (de) * | 1978-07-12 | 1980-01-31 | Licentia Gmbh | Verfahren und vorrichtung zur herstellung von folien, baendern oder platten aus silizium |
DE2842421C2 (de) * | 1978-09-29 | 1980-03-06 | Vacuumschmelze Gmbh, 6450 Hanau | Verfahren und Vorrichtung zur Herstellung von Metallbändern |
-
1980
- 1980-01-11 DE DE3000889A patent/DE3000889C2/de not_active Expired
-
1981
- 1981-01-06 FR FR8100077A patent/FR2473792B1/fr not_active Expired
- 1981-01-09 IT IT19054/81A patent/IT1134973B/it active
Also Published As
Publication number | Publication date |
---|---|
DE3000889A1 (de) | 1981-07-30 |
IT1134973B (it) | 1986-08-20 |
IT8119054A0 (it) | 1981-01-09 |
FR2473792A1 (fr) | 1981-07-17 |
DE3000889C2 (de) | 1984-07-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |