FR2541513B1 - Thyristor auto-protege et son procede de fabrication - Google Patents

Thyristor auto-protege et son procede de fabrication

Info

Publication number
FR2541513B1
FR2541513B1 FR8402233A FR8402233A FR2541513B1 FR 2541513 B1 FR2541513 B1 FR 2541513B1 FR 8402233 A FR8402233 A FR 8402233A FR 8402233 A FR8402233 A FR 8402233A FR 2541513 B1 FR2541513 B1 FR 2541513B1
Authority
FR
France
Prior art keywords
self
manufacturing
protected thyristor
thyristor
protected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8402233A
Other languages
English (en)
Other versions
FR2541513A1 (fr
Inventor
John Xavier Przybysz
John Anthony Ostop
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2541513A1 publication Critical patent/FR2541513A1/fr
Application granted granted Critical
Publication of FR2541513B1 publication Critical patent/FR2541513B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
FR8402233A 1983-02-18 1984-02-14 Thyristor auto-protege et son procede de fabrication Expired FR2541513B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/468,016 US4514898A (en) 1983-02-18 1983-02-18 Method of making a self protected thyristor

Publications (2)

Publication Number Publication Date
FR2541513A1 FR2541513A1 (fr) 1984-08-24
FR2541513B1 true FR2541513B1 (fr) 1987-01-16

Family

ID=23858093

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8402233A Expired FR2541513B1 (fr) 1983-02-18 1984-02-14 Thyristor auto-protege et son procede de fabrication

Country Status (10)

Country Link
US (1) US4514898A (fr)
JP (1) JPS59158561A (fr)
BE (1) BE898948A (fr)
BR (1) BR8400664A (fr)
CA (1) CA1207086A (fr)
DE (1) DE3405549C2 (fr)
FR (1) FR2541513B1 (fr)
GB (1) GB2135514B (fr)
IE (1) IE55503B1 (fr)
IN (1) IN162342B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH670333A5 (fr) * 1986-04-30 1989-05-31 Bbc Brown Boveri & Cie
JPS63260078A (ja) * 1987-04-17 1988-10-27 Hitachi Ltd 過電圧自己保護型サイリスタ
JPH01136369A (ja) * 1987-11-21 1989-05-29 Toshiba Corp 過電圧保護機能付半導体装置の製造方法
US4904609A (en) * 1988-05-06 1990-02-27 General Electric Company Method of making symmetrical blocking high voltage breakdown semiconductor device
US5204273A (en) * 1990-08-20 1993-04-20 Siemens Aktiengesellschaft Method for the manufacturing of a thyristor with defined lateral resistor
US5645711A (en) * 1996-01-05 1997-07-08 Conoco Inc. Process for upgrading the flash zone gas oil stream from a delayed coker
US20020170897A1 (en) * 2001-05-21 2002-11-21 Hall Frank L. Methods for preparing ball grid array substrates via use of a laser

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2238564C3 (de) * 1972-08-04 1981-02-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
US4176371A (en) * 1976-01-09 1979-11-27 Westinghouse Electric Corp. Thyristor fired by overvoltage
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
DE2928685A1 (de) * 1978-07-20 1980-01-31 Electric Power Res Inst Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor
US4261000A (en) * 1980-05-23 1981-04-07 General Electric Company High voltage semiconductor device having an improved dv/dt capability
JPS5785259A (en) * 1980-11-17 1982-05-27 Hitachi Ltd Light drive type thyristor
IE54111B1 (en) * 1982-03-11 1989-06-21 Westinghouse Electric Corp Laser treatment of thyristor to provide overvoltage self-protection

Also Published As

Publication number Publication date
BR8400664A (pt) 1984-09-25
DE3405549A1 (de) 1984-08-23
IE55503B1 (en) 1990-10-10
GB8402718D0 (en) 1984-03-07
BE898948A (fr) 1984-08-17
CA1207086A (fr) 1986-07-02
GB2135514A (en) 1984-08-30
JPS59158561A (ja) 1984-09-08
DE3405549C2 (de) 1994-05-11
GB2135514B (en) 1986-08-28
US4514898A (en) 1985-05-07
IN162342B (fr) 1988-05-07
FR2541513A1 (fr) 1984-08-24
IE840247L (en) 1984-08-18

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Legal Events

Date Code Title Description
ST Notification of lapse