BR8402085A - Tiristor autoprotegido e processo de fabricacao - Google Patents

Tiristor autoprotegido e processo de fabricacao

Info

Publication number
BR8402085A
BR8402085A BR8402085A BR8402085A BR8402085A BR 8402085 A BR8402085 A BR 8402085A BR 8402085 A BR8402085 A BR 8402085A BR 8402085 A BR8402085 A BR 8402085A BR 8402085 A BR8402085 A BR 8402085A
Authority
BR
Brazil
Prior art keywords
self
manufacturing process
protected thyristor
thyristor
protected
Prior art date
Application number
BR8402085A
Other languages
English (en)
Inventor
John X Przybysz
Earl S Schegel
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BR8402085A publication Critical patent/BR8402085A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
BR8402085A 1983-05-09 1984-05-04 Tiristor autoprotegido e processo de fabricacao BR8402085A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/492,772 US4516315A (en) 1983-05-09 1983-05-09 Method of making a self-protected thyristor

Publications (1)

Publication Number Publication Date
BR8402085A true BR8402085A (pt) 1984-12-18

Family

ID=23957578

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8402085A BR8402085A (pt) 1983-05-09 1984-05-04 Tiristor autoprotegido e processo de fabricacao

Country Status (7)

Country Link
US (1) US4516315A (pt)
EP (1) EP0125138B1 (pt)
JP (1) JPS59208781A (pt)
BR (1) BR8402085A (pt)
CA (1) CA1210523A (pt)
DE (1) DE3473383D1 (pt)
IE (1) IE55505B1 (pt)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082795A (en) * 1986-12-05 1992-01-21 General Electric Company Method of fabricating a field effect semiconductor device having a self-aligned structure
JPS63260078A (ja) * 1987-04-17 1988-10-27 Hitachi Ltd 過電圧自己保護型サイリスタ
JPH01136369A (ja) * 1987-11-21 1989-05-29 Toshiba Corp 過電圧保護機能付半導体装置の製造方法
US5072312A (en) * 1988-03-15 1991-12-10 Siemens Aktiengesellschaft Thyristor with high positive and negative blocking capability
US4904609A (en) * 1988-05-06 1990-02-27 General Electric Company Method of making symmetrical blocking high voltage breakdown semiconductor device
US5204273A (en) * 1990-08-20 1993-04-20 Siemens Aktiengesellschaft Method for the manufacturing of a thyristor with defined lateral resistor
JP3155797B2 (ja) * 1991-12-26 2001-04-16 株式会社日立製作所 過電圧自己保護型半導体装置、及び、それを使用した半導体回路
DE4215378C1 (de) * 1992-05-11 1993-09-30 Siemens Ag Thyristor mit Durchbruchbereich
EP1195886A1 (de) 2000-09-29 2002-04-10 ABB Schweiz AG Rückwärtsleitender Gate Commutated Thyristor sowie dessen Anwendung
US6911155B2 (en) * 2002-01-31 2005-06-28 Hewlett-Packard Development Company, L.P. Methods and systems for forming slots in a substrate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2238564C3 (de) * 1972-08-04 1981-02-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
DE2745361A1 (de) * 1977-10-08 1979-04-19 Bbc Brown Boveri & Cie Zweiweg-halbleiterschalter (triac)
DE2928685A1 (de) * 1978-07-20 1980-01-31 Electric Power Res Inst Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor
US4314266A (en) * 1978-07-20 1982-02-02 Electric Power Research Institute, Inc. Thyristor with voltage breakover current control separated from main emitter by current limit region
JPS5735372A (en) * 1980-08-11 1982-02-25 Mitsubishi Electric Corp Photothyristor
DE3369234D1 (en) * 1982-11-15 1987-02-19 Toshiba Kk Thyristor device protected from an overvoltage

Also Published As

Publication number Publication date
EP0125138A1 (en) 1984-11-14
JPH0248147B2 (pt) 1990-10-24
IE841071L (en) 1984-11-09
EP0125138B1 (en) 1988-08-10
DE3473383D1 (en) 1988-09-15
US4516315A (en) 1985-05-14
JPS59208781A (ja) 1984-11-27
CA1210523A (en) 1986-08-26
IE55505B1 (en) 1990-10-10

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