JPS5735372A - Photothyristor - Google Patents

Photothyristor

Info

Publication number
JPS5735372A
JPS5735372A JP11194580A JP11194580A JPS5735372A JP S5735372 A JPS5735372 A JP S5735372A JP 11194580 A JP11194580 A JP 11194580A JP 11194580 A JP11194580 A JP 11194580A JP S5735372 A JPS5735372 A JP S5735372A
Authority
JP
Japan
Prior art keywords
light receiving
receiving section
photoenergy
conductivity
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11194580A
Other languages
Japanese (ja)
Inventor
Tsutomu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11194580A priority Critical patent/JPS5735372A/en
Publication of JPS5735372A publication Critical patent/JPS5735372A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To enable a photothyristor to turn on in response to a small quantity of photoenergy by a method wherein the absorption and damping of incoming light is kept low by providing the surface of a well-shaped light receiving section with a low resistance layer of the same type of conductivity. CONSTITUTION:A well-shaped light receiving section 5 is formed on one of the main surfaces of a pnpn or npnp type 4-layer structure. A low resistance layer 8 of the same type of conductivity is formed on the surface of the light receiving section 5. This lowers the sheet resistance R2 of the light receiving section 5, shortening the time needed for the photocurrent caused by the incidence of photoenergy to start running from an electrode 6 to an electrode 7 and reach a stationary value or the time needed for the thyristor to turn on.
JP11194580A 1980-08-11 1980-08-11 Photothyristor Pending JPS5735372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11194580A JPS5735372A (en) 1980-08-11 1980-08-11 Photothyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11194580A JPS5735372A (en) 1980-08-11 1980-08-11 Photothyristor

Publications (1)

Publication Number Publication Date
JPS5735372A true JPS5735372A (en) 1982-02-25

Family

ID=14574080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11194580A Pending JPS5735372A (en) 1980-08-11 1980-08-11 Photothyristor

Country Status (1)

Country Link
JP (1) JPS5735372A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208781A (en) * 1983-05-09 1984-11-27 ウエスチングハウス　エレクトリツク　コ−ポレ−シヨン Thyristor and method of producing same
JPS6042864A (en) * 1983-05-26 1985-03-07 ゼネラル・エレクトリツク・カンパニイ Voltage breakover protection type thyristor with electric field suppressing layer in avalanche voltage breakover zone
JPH04185974A (en) * 1990-11-16 1992-07-02 Nippon Reinz Co Ltd Metal gasket for cylinder head
EP0743687A2 (en) * 1995-05-17 1996-11-20 Mitsubishi Denki Kabushiki Kaisha Optical trigger thyristor and fabrication method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112682A (en) * 1977-03-14 1978-10-02 Mitsubishi Electric Corp Photo thyristor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112682A (en) * 1977-03-14 1978-10-02 Mitsubishi Electric Corp Photo thyristor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208781A (en) * 1983-05-09 1984-11-27 ウエスチングハウス　エレクトリツク　コ−ポレ−シヨン Thyristor and method of producing same
JPH0248147B2 (en) * 1983-05-09 1990-10-24 Westinghouse Electric Corp
JPS6042864A (en) * 1983-05-26 1985-03-07 ゼネラル・エレクトリツク・カンパニイ Voltage breakover protection type thyristor with electric field suppressing layer in avalanche voltage breakover zone
JPH04185974A (en) * 1990-11-16 1992-07-02 Nippon Reinz Co Ltd Metal gasket for cylinder head
EP0743687A2 (en) * 1995-05-17 1996-11-20 Mitsubishi Denki Kabushiki Kaisha Optical trigger thyristor and fabrication method
EP0743687A3 (en) * 1995-05-17 1997-04-16 Mitsubishi Electric Corp Optical trigger thyristor and fabrication method

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