DE3473383D1 - Self protected thyristor and method of making - Google Patents

Self protected thyristor and method of making

Info

Publication number
DE3473383D1
DE3473383D1 DE8484303088T DE3473383T DE3473383D1 DE 3473383 D1 DE3473383 D1 DE 3473383D1 DE 8484303088 T DE8484303088 T DE 8484303088T DE 3473383 T DE3473383 T DE 3473383T DE 3473383 D1 DE3473383 D1 DE 3473383D1
Authority
DE
Germany
Prior art keywords
making
self protected
protected thyristor
thyristor
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484303088T
Other languages
English (en)
Inventor
John Xavier Przybysz
Earl Stauffer Schlegel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of DE3473383D1 publication Critical patent/DE3473383D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE8484303088T 1983-05-09 1984-05-08 Self protected thyristor and method of making Expired DE3473383D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/492,772 US4516315A (en) 1983-05-09 1983-05-09 Method of making a self-protected thyristor

Publications (1)

Publication Number Publication Date
DE3473383D1 true DE3473383D1 (en) 1988-09-15

Family

ID=23957578

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484303088T Expired DE3473383D1 (en) 1983-05-09 1984-05-08 Self protected thyristor and method of making

Country Status (7)

Country Link
US (1) US4516315A (de)
EP (1) EP0125138B1 (de)
JP (1) JPS59208781A (de)
BR (1) BR8402085A (de)
CA (1) CA1210523A (de)
DE (1) DE3473383D1 (de)
IE (1) IE55505B1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082795A (en) * 1986-12-05 1992-01-21 General Electric Company Method of fabricating a field effect semiconductor device having a self-aligned structure
JPS63260078A (ja) * 1987-04-17 1988-10-27 Hitachi Ltd 過電圧自己保護型サイリスタ
JPH01136369A (ja) * 1987-11-21 1989-05-29 Toshiba Corp 過電圧保護機能付半導体装置の製造方法
US5072312A (en) * 1988-03-15 1991-12-10 Siemens Aktiengesellschaft Thyristor with high positive and negative blocking capability
US4904609A (en) * 1988-05-06 1990-02-27 General Electric Company Method of making symmetrical blocking high voltage breakdown semiconductor device
US5204273A (en) * 1990-08-20 1993-04-20 Siemens Aktiengesellschaft Method for the manufacturing of a thyristor with defined lateral resistor
JP3155797B2 (ja) * 1991-12-26 2001-04-16 株式会社日立製作所 過電圧自己保護型半導体装置、及び、それを使用した半導体回路
DE4215378C1 (de) * 1992-05-11 1993-09-30 Siemens Ag Thyristor mit Durchbruchbereich
EP1195886A1 (de) 2000-09-29 2002-04-10 ABB Schweiz AG Rückwärtsleitender Gate Commutated Thyristor sowie dessen Anwendung
US6911155B2 (en) * 2002-01-31 2005-06-28 Hewlett-Packard Development Company, L.P. Methods and systems for forming slots in a substrate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2238564C3 (de) * 1972-08-04 1981-02-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
DE2745361A1 (de) * 1977-10-08 1979-04-19 Bbc Brown Boveri & Cie Zweiweg-halbleiterschalter (triac)
DE2928685A1 (de) * 1978-07-20 1980-01-31 Electric Power Res Inst Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor
US4314266A (en) * 1978-07-20 1982-02-02 Electric Power Research Institute, Inc. Thyristor with voltage breakover current control separated from main emitter by current limit region
JPS5735372A (en) * 1980-08-11 1982-02-25 Mitsubishi Electric Corp Photothyristor
DE3369234D1 (en) * 1982-11-15 1987-02-19 Toshiba Kk Thyristor device protected from an overvoltage

Also Published As

Publication number Publication date
CA1210523A (en) 1986-08-26
IE55505B1 (en) 1990-10-10
BR8402085A (pt) 1984-12-18
EP0125138A1 (de) 1984-11-14
IE841071L (en) 1984-11-09
JPH0248147B2 (de) 1990-10-24
EP0125138B1 (de) 1988-08-10
US4516315A (en) 1985-05-14
JPS59208781A (ja) 1984-11-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee