DE3473383D1 - Self protected thyristor and method of making - Google Patents

Self protected thyristor and method of making

Info

Publication number
DE3473383D1
DE3473383D1 DE8484303088T DE3473383T DE3473383D1 DE 3473383 D1 DE3473383 D1 DE 3473383D1 DE 8484303088 T DE8484303088 T DE 8484303088T DE 3473383 T DE3473383 T DE 3473383T DE 3473383 D1 DE3473383 D1 DE 3473383D1
Authority
DE
Germany
Prior art keywords
making
self protected
protected thyristor
thyristor
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484303088T
Other languages
English (en)
Inventor
John Xavier Przybysz
Earl Stauffer Schlegel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of DE3473383D1 publication Critical patent/DE3473383D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE8484303088T 1983-05-09 1984-05-08 Self protected thyristor and method of making Expired DE3473383D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/492,772 US4516315A (en) 1983-05-09 1983-05-09 Method of making a self-protected thyristor

Publications (1)

Publication Number Publication Date
DE3473383D1 true DE3473383D1 (en) 1988-09-15

Family

ID=23957578

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484303088T Expired DE3473383D1 (en) 1983-05-09 1984-05-08 Self protected thyristor and method of making

Country Status (7)

Country Link
US (1) US4516315A (de)
EP (1) EP0125138B1 (de)
JP (1) JPS59208781A (de)
BR (1) BR8402085A (de)
CA (1) CA1210523A (de)
DE (1) DE3473383D1 (de)
IE (1) IE55505B1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082795A (en) * 1986-12-05 1992-01-21 General Electric Company Method of fabricating a field effect semiconductor device having a self-aligned structure
JPS63260078A (ja) * 1987-04-17 1988-10-27 Hitachi Ltd 過電圧自己保護型サイリスタ
JPH01136369A (ja) * 1987-11-21 1989-05-29 Toshiba Corp 過電圧保護機能付半導体装置の製造方法
US5072312A (en) * 1988-03-15 1991-12-10 Siemens Aktiengesellschaft Thyristor with high positive and negative blocking capability
US4904609A (en) * 1988-05-06 1990-02-27 General Electric Company Method of making symmetrical blocking high voltage breakdown semiconductor device
US5204273A (en) * 1990-08-20 1993-04-20 Siemens Aktiengesellschaft Method for the manufacturing of a thyristor with defined lateral resistor
JP3155797B2 (ja) * 1991-12-26 2001-04-16 株式会社日立製作所 過電圧自己保護型半導体装置、及び、それを使用した半導体回路
DE4215378C1 (de) * 1992-05-11 1993-09-30 Siemens Ag Thyristor mit Durchbruchbereich
EP1195886A1 (de) 2000-09-29 2002-04-10 ABB Schweiz AG Rückwärtsleitender Gate Commutated Thyristor sowie dessen Anwendung
US6911155B2 (en) * 2002-01-31 2005-06-28 Hewlett-Packard Development Company, L.P. Methods and systems for forming slots in a substrate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2238564C3 (de) * 1972-08-04 1981-02-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
DE2745361A1 (de) * 1977-10-08 1979-04-19 Bbc Brown Boveri & Cie Zweiweg-halbleiterschalter (triac)
US4314266A (en) * 1978-07-20 1982-02-02 Electric Power Research Institute, Inc. Thyristor with voltage breakover current control separated from main emitter by current limit region
DE2928685A1 (de) * 1978-07-20 1980-01-31 Electric Power Res Inst Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor
JPS5735372A (en) * 1980-08-11 1982-02-25 Mitsubishi Electric Corp Photothyristor
EP0108961B1 (de) * 1982-11-15 1987-01-14 Kabushiki Kaisha Toshiba Thyristoranordnung mit Überspannungsschutz

Also Published As

Publication number Publication date
BR8402085A (pt) 1984-12-18
IE55505B1 (en) 1990-10-10
IE841071L (en) 1984-11-09
EP0125138A1 (de) 1984-11-14
EP0125138B1 (de) 1988-08-10
US4516315A (en) 1985-05-14
JPH0248147B2 (de) 1990-10-24
CA1210523A (en) 1986-08-26
JPS59208781A (ja) 1984-11-27

Similar Documents

Publication Publication Date Title
GB2149165B (en) Method of reducing characters
GB2149941B (en) Zone condition controller and method of using same
EP0191162A3 (en) Method of software protection
GB2109995B (en) Semiconductor structures and methods of forming such structures
DE3479548D1 (en) Semiconductor device and method of manufacture thereof
GR82481B (en) Improved method of preparing-2-fluoro-17b-estradiol
IL72992A (en) Mold and method of using it
DE3263763D1 (en) Semiconductor laser and method of making same
DE3473383D1 (en) Self protected thyristor and method of making
DE3468472D1 (en) Safe arrangement and method of operating it
PH19636A (en) Valve and method of making same
DE3460309D1 (en) Aqueous composition and method of providing the same
DE3477485D1 (en) Insulating article and method of making same
GB2151759B (en) Demolition device and method of preparing same
GB2146016B (en) Method for the preparation of haloacetals and halodioxolanes
HK66490A (en) Compositions and method for stabilization of anthralin
EP0127780A3 (en) An improved implement and method of manufacture thereof
GR80228B (en) Method for the preparation of lymphotoxin and lymphotoxin-mrna
SU1150146A1 (en) Method of building ship and building ways for effecting same
JPS57177230A (en) Method of selecting and breaking load
IL70150A (en) Packaging elements and method of manufacturing same
EP0464866A3 (en) Wafer and method of making same
BG43924A1 (en) N- derivative of cytazine and method for its preparation
BG37140A1 (en) Azoderivatives of 2- chlor- 4- amino- 5- methyl- phenylsulphonylazide and method for its preparing
PL241046A1 (en) Permittive element and method of making same

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee