JPS5712533A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5712533A
JPS5712533A JP8682480A JP8682480A JPS5712533A JP S5712533 A JPS5712533 A JP S5712533A JP 8682480 A JP8682480 A JP 8682480A JP 8682480 A JP8682480 A JP 8682480A JP S5712533 A JPS5712533 A JP S5712533A
Authority
JP
Japan
Prior art keywords
groove
glass
psg
substrate
covering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8682480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6235267B2 (cs
Inventor
Junji Sakurai
Hajime Kamioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8682480A priority Critical patent/JPS5712533A/ja
Publication of JPS5712533A publication Critical patent/JPS5712533A/ja
Publication of JPS6235267B2 publication Critical patent/JPS6235267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
JP8682480A 1980-06-26 1980-06-26 Manufacture of semiconductor device Granted JPS5712533A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8682480A JPS5712533A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8682480A JPS5712533A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5712533A true JPS5712533A (en) 1982-01-22
JPS6235267B2 JPS6235267B2 (cs) 1987-07-31

Family

ID=13897550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8682480A Granted JPS5712533A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5712533A (cs)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743438A (en) * 1980-08-29 1982-03-11 Toshiba Corp Semiconductor device and manufacture thereof
JPS589333A (ja) * 1981-07-08 1983-01-19 Hitachi Ltd 半導体装置
JPS5827342A (ja) * 1981-07-27 1983-02-18 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン 誘電体分離領域形成方法
JPS5955033A (ja) * 1982-09-22 1984-03-29 Fujitsu Ltd 素子間分離膜の形成方法
JPS59106133A (ja) * 1982-12-09 1984-06-19 Nec Corp 集積回路装置
JPS6043843A (ja) * 1983-08-19 1985-03-08 Nec Corp 半導体装置の製造方法
JPS60111436A (ja) * 1983-11-22 1985-06-17 Toshiba Corp 半導体装置の製造方法
JPS60170951A (ja) * 1984-02-16 1985-09-04 Nec Corp 素子分離方法
US4611386A (en) * 1982-12-27 1986-09-16 Fujitsu Limited Method of producing a semiconductor device
US4729815A (en) * 1986-07-21 1988-03-08 Motorola, Inc. Multiple step trench etching process
JPS6386449A (ja) * 1986-09-30 1988-04-16 Toshiba Corp 半導体装置の製造方法
JPS6392045A (ja) * 1986-10-06 1988-04-22 Toshiba Corp 半導体装置の製造方法
DE3829015A1 (de) * 1987-08-28 1989-04-06 Toshiba Kawasaki Kk Verfahren zur herstellung eines halbleiters
US4952524A (en) * 1989-05-05 1990-08-28 At&T Bell Laboratories Semiconductor device manufacture including trench formation
JPH0430557A (ja) * 1990-05-28 1992-02-03 Toshiba Corp 半導体装置の製造方法
US5858859A (en) * 1990-05-28 1999-01-12 Kabushiki Kaisha Toshiba Semiconductor device having a trench for device isolation fabrication method
US6077786A (en) * 1997-05-08 2000-06-20 International Business Machines Corporation Methods and apparatus for filling high aspect ratio structures with silicate glass
KR100392894B1 (ko) * 2000-12-27 2003-07-28 동부전자 주식회사 반도체 소자의 트렌치 형성 방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021213701A1 (de) 2021-12-02 2023-06-07 Robert Bosch Gesellschaft mit beschränkter Haftung Kontrollsystem und Verfahren zur Kontrolle der Position eines mobilen Endgeräts mittels eines Kontrollsystems

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743438A (en) * 1980-08-29 1982-03-11 Toshiba Corp Semiconductor device and manufacture thereof
JPS589333A (ja) * 1981-07-08 1983-01-19 Hitachi Ltd 半導体装置
JPS5827342A (ja) * 1981-07-27 1983-02-18 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン 誘電体分離領域形成方法
JPS5955033A (ja) * 1982-09-22 1984-03-29 Fujitsu Ltd 素子間分離膜の形成方法
JPS59106133A (ja) * 1982-12-09 1984-06-19 Nec Corp 集積回路装置
US4611386A (en) * 1982-12-27 1986-09-16 Fujitsu Limited Method of producing a semiconductor device
JPS6043843A (ja) * 1983-08-19 1985-03-08 Nec Corp 半導体装置の製造方法
JPS60111436A (ja) * 1983-11-22 1985-06-17 Toshiba Corp 半導体装置の製造方法
JPS60170951A (ja) * 1984-02-16 1985-09-04 Nec Corp 素子分離方法
US4729815A (en) * 1986-07-21 1988-03-08 Motorola, Inc. Multiple step trench etching process
JPS6386449A (ja) * 1986-09-30 1988-04-16 Toshiba Corp 半導体装置の製造方法
JPS6392045A (ja) * 1986-10-06 1988-04-22 Toshiba Corp 半導体装置の製造方法
DE3829015A1 (de) * 1987-08-28 1989-04-06 Toshiba Kawasaki Kk Verfahren zur herstellung eines halbleiters
US4952524A (en) * 1989-05-05 1990-08-28 At&T Bell Laboratories Semiconductor device manufacture including trench formation
JPH0430557A (ja) * 1990-05-28 1992-02-03 Toshiba Corp 半導体装置の製造方法
US5858859A (en) * 1990-05-28 1999-01-12 Kabushiki Kaisha Toshiba Semiconductor device having a trench for device isolation fabrication method
US6077786A (en) * 1997-05-08 2000-06-20 International Business Machines Corporation Methods and apparatus for filling high aspect ratio structures with silicate glass
KR100392894B1 (ko) * 2000-12-27 2003-07-28 동부전자 주식회사 반도체 소자의 트렌치 형성 방법

Also Published As

Publication number Publication date
JPS6235267B2 (cs) 1987-07-31

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