JPS57114143A - Photomask for photoetching - Google Patents
Photomask for photoetchingInfo
- Publication number
- JPS57114143A JPS57114143A JP58781A JP58781A JPS57114143A JP S57114143 A JPS57114143 A JP S57114143A JP 58781 A JP58781 A JP 58781A JP 58781 A JP58781 A JP 58781A JP S57114143 A JPS57114143 A JP S57114143A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoresist
- glass substrate
- metallic layer
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To obtain an inexpensive photomask with high surface hardness by forming a pattern of a metallic layer on one principal plane surface of a chemically tempered glass substrate. CONSTITUTION:A glass substrate is ion-exchanged by contact with molten alkali salt contg. alkali ion having ionic radius larger than the alkali ion contained in the glass at a temp. below the transition temp. of the glass to obtain a chemically tempered glass substrate 3. On the substrate 3 Cr, Cr2O3 or the like is vapor-deposited in 1,000-5,000Angstrom thickness to form a metallic layer 4. A photoresist 5 is applied to the layer 4, selectively exposed, and developed to form a patterned photoresist 6. By etching the layer 4 using the photoresist 6 as a mask, a metallic layer 7 of the desired pattern is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58781A JPS57114143A (en) | 1981-01-06 | 1981-01-06 | Photomask for photoetching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58781A JPS57114143A (en) | 1981-01-06 | 1981-01-06 | Photomask for photoetching |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57114143A true JPS57114143A (en) | 1982-07-15 |
Family
ID=11477852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58781A Pending JPS57114143A (en) | 1981-01-06 | 1981-01-06 | Photomask for photoetching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57114143A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016194785A1 (en) * | 2015-05-29 | 2016-12-08 | 旭硝子株式会社 | Chemically strengthened glass |
-
1981
- 1981-01-06 JP JP58781A patent/JPS57114143A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016194785A1 (en) * | 2015-05-29 | 2016-12-08 | 旭硝子株式会社 | Chemically strengthened glass |
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