JPS572526A - Forming method for pattern of sputter film - Google Patents

Forming method for pattern of sputter film

Info

Publication number
JPS572526A
JPS572526A JP7617980A JP7617980A JPS572526A JP S572526 A JPS572526 A JP S572526A JP 7617980 A JP7617980 A JP 7617980A JP 7617980 A JP7617980 A JP 7617980A JP S572526 A JPS572526 A JP S572526A
Authority
JP
Japan
Prior art keywords
mask
substrate
pattern
sputter film
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7617980A
Other languages
Japanese (ja)
Inventor
Kazuhiko Amemori
Kazuo Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7617980A priority Critical patent/JPS572526A/en
Publication of JPS572526A publication Critical patent/JPS572526A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To enhance the accuracy of the pattern of a sputter film by intimately contacting the first mask having a hole on a substrate, then forming the second mask having a hole via a gap and sputtering it with a target confronted with the substrate. CONSTITUTION:A contact mask 21 is formed on a substrate 1, a hole is opened at the mask, an isolation mask 22 having a hole 62 confronts via a gap with the substrate 1, sputter is performed in the state that the substrate 1 is made to confront with the target to form a sputtering film 4, and unnecessary sputter film 4' is then removed together with the contact mask 21. Thus, the sputter film having high dimensional accuracy of the pattern can be efficiently formed.
JP7617980A 1980-06-06 1980-06-06 Forming method for pattern of sputter film Pending JPS572526A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7617980A JPS572526A (en) 1980-06-06 1980-06-06 Forming method for pattern of sputter film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7617980A JPS572526A (en) 1980-06-06 1980-06-06 Forming method for pattern of sputter film

Publications (1)

Publication Number Publication Date
JPS572526A true JPS572526A (en) 1982-01-07

Family

ID=13597876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7617980A Pending JPS572526A (en) 1980-06-06 1980-06-06 Forming method for pattern of sputter film

Country Status (1)

Country Link
JP (1) JPS572526A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145227U (en) * 1982-03-26 1983-09-30 古河電気工業株式会社 Composite rigid body line

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145227U (en) * 1982-03-26 1983-09-30 古河電気工業株式会社 Composite rigid body line

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