JPS57112047A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57112047A
JPS57112047A JP18728880A JP18728880A JPS57112047A JP S57112047 A JPS57112047 A JP S57112047A JP 18728880 A JP18728880 A JP 18728880A JP 18728880 A JP18728880 A JP 18728880A JP S57112047 A JPS57112047 A JP S57112047A
Authority
JP
Japan
Prior art keywords
polymer
grooves
isolation
oxide
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18728880A
Other languages
Japanese (ja)
Inventor
Minoru Nakajima
Shiro Takeda
Toshisuke Kitakoji
Tetsuya Ogawa
Hikosuke Shibayama
Nobuo Toyokura
Norishige Hisatsugu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18728880A priority Critical patent/JPS57112047A/en
Publication of JPS57112047A publication Critical patent/JPS57112047A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To obtain precise insulating isolation of fine size by a method wherein when insulating isolation is performed in a semiconductor substrate a groove is formed in an isolation region in the first place, and over all surface organic oxysilan and/or its polymer is extended by flowing with the groove filled, and by heat-treatment thermally stable silicon oxide is produced. CONSTITUTION:On the surface of a p type Si substrate 1, grooves 2a and 2b which are to be isolation grooves is dug by ion-etching using an electron ray resist, and over all surface containing them a solution of an organic solvent consisting of polymethyle-silsys-oxan is applied and heated at 120 deg.C in 1hr, and polymer 3 is formed by removing the solvent. Next by heating at 900 deg.C in 1hr, volume of polymer 3 is decreased and a silicon oxide 4 is formed, and through plasma etching using CF4 family gas, to oxide 4 except grooved region is removed, and filled layers 5a and 5b consisting of the oxide 4 are left unremoved soley the grooves 2a and 2b. Subsequently in a substrate 1 surrounded by them as the conventional method, an n type source region 8 and a drain 9 are provided.
JP18728880A 1980-12-29 1980-12-29 Manufacture of semiconductor device Pending JPS57112047A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18728880A JPS57112047A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18728880A JPS57112047A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57112047A true JPS57112047A (en) 1982-07-12

Family

ID=16203368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18728880A Pending JPS57112047A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57112047A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607145A (en) * 1983-06-25 1985-01-14 Toshiba Corp Semiconductor device
JPS6249643A (en) * 1985-04-19 1987-03-04 Nec Corp Semiconductor device and its manufacture
US5741738A (en) * 1994-12-02 1998-04-21 International Business Machines Corporation Method of making corner protected shallow trench field effect transistor
US5868870A (en) * 1992-12-10 1999-02-09 Micron Technology, Inc. Isolation structure of a shallow semiconductor device trench
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607145A (en) * 1983-06-25 1985-01-14 Toshiba Corp Semiconductor device
JPS6249643A (en) * 1985-04-19 1987-03-04 Nec Corp Semiconductor device and its manufacture
US5868870A (en) * 1992-12-10 1999-02-09 Micron Technology, Inc. Isolation structure of a shallow semiconductor device trench
US5741738A (en) * 1994-12-02 1998-04-21 International Business Machines Corporation Method of making corner protected shallow trench field effect transistor
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content

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