JPS57112018A - Correction of pattern - Google Patents

Correction of pattern

Info

Publication number
JPS57112018A
JPS57112018A JP18723880A JP18723880A JPS57112018A JP S57112018 A JPS57112018 A JP S57112018A JP 18723880 A JP18723880 A JP 18723880A JP 18723880 A JP18723880 A JP 18723880A JP S57112018 A JPS57112018 A JP S57112018A
Authority
JP
Japan
Prior art keywords
film
pinhole
resist
exposed
resist film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18723880A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6161694B2 (enrdf_load_stackoverflow
Inventor
Akira Morishige
Takao Shida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18723880A priority Critical patent/JPS57112018A/ja
Publication of JPS57112018A publication Critical patent/JPS57112018A/ja
Publication of JPS6161694B2 publication Critical patent/JPS6161694B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72Repair or correction of mask defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP18723880A 1980-12-29 1980-12-29 Correction of pattern Granted JPS57112018A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18723880A JPS57112018A (en) 1980-12-29 1980-12-29 Correction of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18723880A JPS57112018A (en) 1980-12-29 1980-12-29 Correction of pattern

Publications (2)

Publication Number Publication Date
JPS57112018A true JPS57112018A (en) 1982-07-12
JPS6161694B2 JPS6161694B2 (enrdf_load_stackoverflow) 1986-12-26

Family

ID=16202466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18723880A Granted JPS57112018A (en) 1980-12-29 1980-12-29 Correction of pattern

Country Status (1)

Country Link
JP (1) JPS57112018A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023023184A (ja) * 2021-08-04 2023-02-16 株式会社エスケーエレクトロニクス パターン修正方法およびフォトマスク

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5066449A (enrdf_load_stackoverflow) * 1973-10-17 1975-06-04
JPS5654439A (en) * 1979-10-11 1981-05-14 Fujitsu Ltd Hard mask correcting method
JPS5670554A (en) * 1979-11-15 1981-06-12 Fujitsu Ltd Mask pattern correction method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5066449A (enrdf_load_stackoverflow) * 1973-10-17 1975-06-04
JPS5654439A (en) * 1979-10-11 1981-05-14 Fujitsu Ltd Hard mask correcting method
JPS5670554A (en) * 1979-11-15 1981-06-12 Fujitsu Ltd Mask pattern correction method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023023184A (ja) * 2021-08-04 2023-02-16 株式会社エスケーエレクトロニクス パターン修正方法およびフォトマスク
JP2023067975A (ja) * 2021-08-04 2023-05-16 株式会社エスケーエレクトロニクス パターン修正方法

Also Published As

Publication number Publication date
JPS6161694B2 (enrdf_load_stackoverflow) 1986-12-26

Similar Documents

Publication Publication Date Title
JPS5569265A (en) Pattern-forming method
JPS5483846A (en) Diffusing plate
JPS57112018A (en) Correction of pattern
JPS649618A (en) Pattern formation
JPS5494881A (en) Exposure method
JPS57183030A (en) Manufacture of semiconductor device
JPS5610930A (en) Manufacture of semiconductor device
JPS5574544A (en) Photo mask correcting method
JPS5656633A (en) Manufacture of semiconductor element
JPS5742043A (en) Photosensitive material
JPS55135837A (en) Manufacture of photomask
JPS5619045A (en) Electron beam sensitive inorganic resist
JPS5617350A (en) Exposing method
JPS53135578A (en) Mark protection method
JPS57118641A (en) Lifting-off method
ATE53682T1 (de) Verfahren zur herstellung von grossflaechigen integrierten schaltungen.
JPS5381079A (en) Mask forming method
JPS5646230A (en) Exposing method
JPS5568634A (en) Manufacture of mask for x-ray exposure
JPS5741638A (en) Photomask for electron beam
JPS5792836A (en) Etching method polyimide resin film
JPS52127173A (en) Pattern formation method
JPS6489435A (en) Dissolution removing method of resist
JPS5690539A (en) Production of semiconductor device
JPS5727031A (en) Formation of resist pattern