JPS5654439A - Hard mask correcting method - Google Patents

Hard mask correcting method

Info

Publication number
JPS5654439A
JPS5654439A JP13103079A JP13103079A JPS5654439A JP S5654439 A JPS5654439 A JP S5654439A JP 13103079 A JP13103079 A JP 13103079A JP 13103079 A JP13103079 A JP 13103079A JP S5654439 A JPS5654439 A JP S5654439A
Authority
JP
Japan
Prior art keywords
layer
pinhole
mask
window
resist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13103079A
Other languages
Japanese (ja)
Other versions
JPS6140102B2 (en
Inventor
Kenichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13103079A priority Critical patent/JPS5654439A/en
Publication of JPS5654439A publication Critical patent/JPS5654439A/en
Publication of JPS6140102B2 publication Critical patent/JPS6140102B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To perfectly correct the pinhole of a hard mask for manufacturing LSI, etc. in a short time by making a pinhole correcting window in the 1st resist layer, covering the whole surface of the mask with a correcting material, and forming the 2nd resist layer on the window part. CONSTITUTION:Positive resist layer 4 is applied to the whole surface of Cr mask layer 2 having pinhole 3 on glass substrate 1, the position of pinhole 3 is detected, and a resist layer part covering pinhole 3 is irradiated with ultraviolet rays 5 or the like. The exposed part is then removed by development to make correcting window 6, and the whole surface of the mask is covered with correcting material layer 7 by the vapor deposition of Cr or other method. The 2nd resist layer 9 is stuck to the region of window 6. Disclosed layer 7 is removed by using layer 9 as a mask, and layers 9, 4 are removed to leave correcting material layer 8 on the pinhole 3 part. Thus, layers 4, 9 are removed after removing the disclosed part of layer 7, so a shorter lift-off time is required. Since a brush, etc. are not used, the mask is not damaged.
JP13103079A 1979-10-11 1979-10-11 Hard mask correcting method Granted JPS5654439A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13103079A JPS5654439A (en) 1979-10-11 1979-10-11 Hard mask correcting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13103079A JPS5654439A (en) 1979-10-11 1979-10-11 Hard mask correcting method

Publications (2)

Publication Number Publication Date
JPS5654439A true JPS5654439A (en) 1981-05-14
JPS6140102B2 JPS6140102B2 (en) 1986-09-08

Family

ID=15048366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13103079A Granted JPS5654439A (en) 1979-10-11 1979-10-11 Hard mask correcting method

Country Status (1)

Country Link
JP (1) JPS5654439A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57112018A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Correction of pattern
JPS6377056A (en) * 1986-09-19 1988-04-07 Fujitsu Ltd Correcting method for photomask

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57112018A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Correction of pattern
JPS6161694B2 (en) * 1980-12-29 1986-12-26 Fujitsu Ltd
JPS6377056A (en) * 1986-09-19 1988-04-07 Fujitsu Ltd Correcting method for photomask

Also Published As

Publication number Publication date
JPS6140102B2 (en) 1986-09-08

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