JPS6161694B2 - - Google Patents
Info
- Publication number
- JPS6161694B2 JPS6161694B2 JP18723880A JP18723880A JPS6161694B2 JP S6161694 B2 JPS6161694 B2 JP S6161694B2 JP 18723880 A JP18723880 A JP 18723880A JP 18723880 A JP18723880 A JP 18723880A JP S6161694 B2 JPS6161694 B2 JP S6161694B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- resist film
- opening
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 238000012937 correction Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims 1
- 239000011651 chromium Substances 0.000 description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 12
- 229910052804 chromium Inorganic materials 0.000 description 11
- 239000011521 glass Substances 0.000 description 3
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】
本発明はホトマスク表面に形成されたパターン
の修正方法に関する。なお本発明においては、ガ
ラス基板のような透光性基板上に、遮光膜を所望
のパターンに従つて形成したものの総称として
「ホトマスク」を用いる。従つてホトマスクに
は、レチクルのようなものも含む。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for modifying a pattern formed on a photomask surface. In the present invention, a "photomask" is used as a general term for a light-shielding film formed in a desired pattern on a light-transmitting substrate such as a glass substrate. Therefore, a photomask also includes something like a reticle.
上記ホトマスクを作成した場合、形成されたホ
トマスク（遮光膜）を部分的に修正する必要が生
じる場合がある。即ち、パターン中にピンホール
のような欠陥がある場合、或いは近接して配設さ
れた２つのパターンを接続したい場合等、パター
ンの開口部分を埋めてしまいたい場合がしばしば
生じる。 When the photomask described above is created, it may be necessary to partially modify the formed photomask (light-shielding film). That is, when there is a defect such as a pinhole in a pattern, or when it is desired to connect two closely arranged patterns, it is often necessary to fill an opening in a pattern.
第１図は、このような場合にかねてより用いら
れているパターン修正方法を示す要部断面図で、
同図ａに示すように、例えば透光性基板（これを
単にマスク基板と略記する）１表面に、所望のパ
ターンに従つて選択的に形成したクロム皮膜等の
遮光膜２に、ピンホール３のような修正を要する
開口部分が存在するものとする。 Figure 1 is a cross-sectional view of the main parts showing a pattern correction method that has been used for a long time in such cases.
As shown in Figure a, for example, a pinhole 3 is formed in a light-shielding film 2 such as a chrome film selectively formed on the surface of a light-transmitting substrate (simply referred to as a mask substrate) 1 according to a desired pattern. Assume that there is an opening that requires modification, such as:
これを修正するには、先ず、同図ｂに示すよう
にピンホール３の部分を開口部４とするレジスト
膜５を形成する。次いで同図ｃに示す如く、レジ
スト膜５上を含むマスク基板１全面に、クロム
（Cr）等をスパツタリング法或いは蒸着法により
被着した皮膜６を形成する。しかる後、リフトオ
フ法により前記レジスト膜５を除去し同時にレジ
スト膜５上に被着せる皮膜６を除去する。 To correct this, first, as shown in FIG. 1B, a resist film 5 is formed with the pinhole 3 as the opening 4. Next, as shown in FIG. 3c, a film 6 of chromium (Cr) or the like is deposited on the entire surface of the mask substrate 1 including the resist film 5 by sputtering or vapor deposition. Thereafter, the resist film 5 is removed by a lift-off method, and at the same time, the film 6 deposited on the resist film 5 is removed.
このようにすることにより、前記ピンホール３
部分にはクロムよりなる皮膜６が残留するので、
遮光膜２のパターンはピンホールが埋められて完
全なものに修正される。 By doing this, the pinhole 3
Since the film 6 made of chromium remains on the part,
The pattern of the light-shielding film 2 is completely corrected by filling in the pinholes.
ところが上述の方法ではマスク基板１上に被着
せしめたクロムよりなる皮膜６のうち、ピンホー
ル３の修正に必要なのはごく僅かの部分だけで、
大部分は除去される。そのため除去されるクロム
の量が非常に多いので、その残滓がマスク基板１
表面に付着する。その際上記クロムの微小片７が
遮光膜２の正規の開口部８にも付着する。この付
着した微小片７はこのあとどのように洗浄しても
除去できないので、この方法ではピンホール３の
修正はできても遮光膜２のパターンは結局不良と
なつてしまう。 However, in the method described above, only a small portion of the chromium film 6 deposited on the mask substrate 1 is needed to correct the pinholes 3.
Most are removed. Therefore, the amount of chromium removed is very large, and its residue remains on the mask substrate 1.
Adheres to surfaces. At this time, the fine chromium pieces 7 also adhere to the regular openings 8 of the light shielding film 2. Since the adhered fine particles 7 cannot be removed no matter how the cleaning is performed thereafter, the pattern of the light-shielding film 2 ends up being defective even if the pinhole 3 can be corrected with this method.
本発明の目的は上述の問題点を解消して他に悪
影響を及ぼすことなく、ピンホール等のパターン
の開口部分を埋めることのできるパターン修正方
法を提供することにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide a pattern correction method capable of solving the above-mentioned problems and filling openings in a pattern such as pinholes without adversely affecting others.
本発明の特徴は、透光性基板表面に選択的に形
成された遮光膜の修正を行うに際し、修正すべき
開口部分を有する前記遮光膜上を含む前記透光性
基板上にポジ型のレジスト膜を形成する工程と、
前記透光性基板の裏面から前記ポジ型レジスト膜
に露光して、少なくとも前記修正すべき開口部分
に開口を有する第１のレジスト膜を形成する工程
と、該第１のレジスト膜上に所定の材質よりなる
皮膜を形成する工程と、該皮膜の前記修正すべき
開口部に対応する部位の上に第２のレジスト膜を
選択的に形成する工程と、該第２のレジスト膜を
マスクとして前記皮膜の露出せる部分を除去する
工程と、前記第１及び第２のレジスト膜を除去す
る工程とを含むことにある。 A feature of the present invention is that when a light-shielding film selectively formed on the surface of a light-transmitting substrate is repaired, a positive resist is placed on the light-transmitting substrate including the light-shielding film having an opening to be repaired. a step of forming a film;
a step of exposing the positive resist film from the back surface of the light-transmitting substrate to form a first resist film having an opening at least in the opening portion to be corrected; a step of forming a film made of a material; a step of selectively forming a second resist film on a portion of the film corresponding to the opening to be corrected; and a step of forming the film using the second resist film as a mask. The method includes the steps of removing an exposed portion of the film and removing the first and second resist films.
以下本発明を実施例により説明する。 The present invention will be explained below with reference to Examples.
第２図ａにおいて１はガラス板等よりなる透明
なマスク基板で、２は所望のパターンに従つて形
成されたクロム（Cr）膜等よりなる遮光膜、３
は遮光膜２に生じたピンホールである。 In FIG. 2a, 1 is a transparent mask substrate made of a glass plate, etc., 2 is a light-shielding film made of a chromium (Cr) film, etc. formed according to a desired pattern, and 3 is a transparent mask substrate made of a glass plate or the like;
is a pinhole generated in the light shielding film 2.
先ず上記遮光膜２上を含むマスク基板１全表面
にポジ型レジストを塗布し、マスク基板１裏面よ
り全面に露光する。このようにすると、上記ポジ
型レジストは、遮光膜２の開口部分は露光される
が、その他の部分は露光されない。 First, a positive type resist is applied to the entire surface of the mask substrate 1 including the top of the light shielding film 2, and the entire surface of the mask substrate 1 is exposed to light from the back surface. In this way, in the positive resist, the opening portion of the light-shielding film 2 is exposed, but the other portions are not exposed.
従つて、このあと通常の方法で現像処理を施す
と、遮光膜２のピンホール３及び正規の開口８の
部分に被着せるポジ型レジスト塗膜は溶解除去さ
れて、第２図ｂに示すように修正すべきピンホー
ル３部分及び遮光膜２のその他の開口部分を開口
部４，４′とする第１のレジスト膜５が形成され
る。 Therefore, if a development process is then carried out in a normal manner, the positive resist coating film deposited on the pinhole 3 and regular opening 8 portion of the light-shielding film 2 will be dissolved and removed, resulting in a state as shown in FIG. 2b. A first resist film 5 is formed in which the pinhole 3 portion to be corrected and other opening portions of the light shielding film 2 are used as openings 4 and 4'.
本工程では上述のように、第１のレジスト膜５
を形成するに際して、遮光膜２上に塗布したポジ
型レジスト膜を、遮光膜２自身をマスクとして自
己整合的に露光するので、位置合わせ工程は不要
で、作業はいたつて簡単であり、しかも遮光膜２
と第１のレジスト膜５との位置ずれを生じること
はなく、遮光膜２の開口部は第１のレジスト膜５
も開口部となり、遮光膜２が存在する部分には第
１のレジスト膜５が残留する。 In this step, as described above, the first resist film 5
When forming the positive resist film applied on the light shielding film 2, the light shielding film 2 itself is used as a mask to expose the positive resist film in a self-aligned manner, so there is no need for a positioning process and the work is simple. membrane 2
There is no misalignment between the first resist film 5 and the opening of the light shielding film 2.
The first resist film 5 remains in the portion where the light shielding film 2 is present, which also serves as an opening.
次いで同図ｃに見られる如く、クロム（Cr）
をスパツタリング法或いは蒸着法により上記第１
のレジスト膜５上を含むマスク基板１全表面に被
着して皮膜６を形成する。 Next, as shown in figure c, chromium (Cr)
by sputtering or vapor deposition method.
A film 6 is formed on the entire surface of the mask substrate 1 including the top of the resist film 5 .
次いで同図ｄに示すように上記皮膜６上の前記
第１のレジスト膜５の開口部４に対応する位置即
ちピンホール３の部分に対応する部位の上に、第
２のレジスト膜１１を選択的に形成する。この第
２のレジスト膜１１の形成は、通常の方法に従つ
て皮膜６上全面にネガ型レジストを塗布し、上述
の第２のレジスト膜１１を形成すべき部分のみに
局所的に露光した後現像処理を施す方法〔特開昭
56−70554号公報参照〕、または上述の第２のレジ
スト膜１１を形成すべき部分にポジ型レジストを
滴下する等の方法で局所的に塗布し、露光せずに
現像処理を施す方法〔特開昭56−54439号公報参
照〕等、公知の技術により実施できる。 Next, as shown in FIG. d, a second resist film 11 is selected on the film 6 at a position corresponding to the opening 4 of the first resist film 5, that is, on a portion corresponding to the pinhole 3. to form. The second resist film 11 is formed by applying a negative resist to the entire surface of the film 6 in accordance with a conventional method, and then locally exposing only the portion where the second resist film 11 is to be formed. Method of developing processing [JP-A-Sho
No. 56-70554], or a method in which a positive resist is locally applied by dropping a drop onto the area where the second resist film 11 is to be formed, and then developed without exposure [Special This can be carried out using known techniques such as [see Japanese Patent Publication No. 56-54439].
次いで同図ｅに示す如く、上記第２のレジスト
膜１１をマスクとして皮膜６の不要部分を通常の
エツチング法、例えば、硝酸第２セリウム・アン
モン〔Ce（NO3）4・2NH4NO3・xH2O〕溶液によ
り除去し、更に同図ｆに示すように上記第１及び
第２のレジスト膜５及び１１を除去する。 Next, as shown in FIG. 5E, using the second resist film 11 as a mask, unnecessary parts of the film 6 are etched using a conventional etching method, for example, ceric ammonium nitrate [Ce(NO 3 ) 4 2NH 4 NO 3 . xH 2 O] solution, and the first and second resist films 5 and 11 are further removed as shown in FIG.
かくして遮光膜２のピンホール３はクロム皮膜
６により埋められて、完全なパターンに修正され
た。 In this way, the pinholes 3 in the light-shielding film 2 were filled with the chromium film 6, and the pattern was corrected to be perfect.
本実施例においては、クロム皮膜６の不要部分
はエツチング法により溶解除去されるので、従来
のリフトオフ法によつて除去した場合のように、
残滓が正規の開口８内に付着することはない。 In this embodiment, unnecessary parts of the chromium film 6 are dissolved and removed by the etching method, so that the unnecessary parts are removed by the conventional lift-off method.
No residue will adhere to the inside of the regular opening 8.
なお本発明では上述の如く、第１のレジスト膜
５を自己整合的に形成するので、第１のレジスト
膜５はその下層の遮光膜２とほぼ同一パターンに
形成される。従つて、クロム皮膜６は、ピンホー
ル３の部分以外は第１のレジスト膜５の上に形成
されているので、第１のレジスト膜５を除去する
際に同時に除去される。従つてクロム皮膜６はピ
ンホール３を埋めた部分のみが残留することとな
り、修正されたパターン２は凹凸の少ないものと
なる。 In the present invention, as described above, the first resist film 5 is formed in a self-aligned manner, so that the first resist film 5 is formed in substantially the same pattern as the light shielding film 2 underlying it. Therefore, since the chromium film 6 is formed on the first resist film 5 except for the portion of the pinhole 3, it is removed at the same time as the first resist film 5 is removed. Therefore, only the portion of the chromium film 6 that filled the pinhole 3 remains, and the corrected pattern 2 has fewer irregularities.
また本発明では、皮膜６と遮光膜２との間に第
１のレジスト膜５を介挿しているので、皮膜６を
エツチングする間、遮光膜２は第１のレジスト膜
５によつて保護されており、エツチングされる心
配はない。従つて皮膜６の材質及びその形成工程
や除去工程等を任意に選択でき、本実施例で説明
した如く、遮光膜２と皮膜６の材質を同一とする
ことも可能である。 Further, in the present invention, since the first resist film 5 is interposed between the film 6 and the light shielding film 2, the light shielding film 2 is protected by the first resist film 5 while the film 6 is being etched. There is no need to worry about being etched. Therefore, the material of the film 6, its formation process, removal process, etc. can be arbitrarily selected, and as explained in this embodiment, it is also possible to make the materials of the light shielding film 2 and the film 6 the same.
更に、本発明はピンホールのようなパターンの
欠損部分の修正のみならず、相互に近接離隔して
形成されたパターンを設計変更等により接続する
等の、開口部分を埋めるような場合にも用い得る
のである。 Furthermore, the present invention can be used not only to repair missing parts of patterns such as pinholes, but also to fill in openings, such as connecting patterns that are formed close to each other by changing the design. You get it.
以上説明した如く、本発明によれば、透光性基
板に形成したパターンやレチクル及びホトマスク
に形成したパターンを、他に影響を及ぼすことな
く修正することができる。 As described above, according to the present invention, a pattern formed on a transparent substrate or a pattern formed on a reticle or photomask can be corrected without affecting others.
第１図は従来のパターン修正方法の説明に供す
るための要部断面図、第２図は本発明の一実施例
を示す要部断面図である。
図において、１は被処理基板、２は遮光膜、３
は修正すべき開口部分、４は第１のレジスト膜の
開口部、５は第１のレジスト膜、６は皮膜、１１
は第２のレジスト膜を示す。
FIG. 1 is a sectional view of a main part for explaining a conventional pattern correction method, and FIG. 2 is a sectional view of a main part showing an embodiment of the present invention. In the figure, 1 is a substrate to be processed, 2 is a light shielding film, and 3 is a substrate to be processed.
4 is the opening of the first resist film; 5 is the first resist film; 6 is the film; 11 is the opening to be corrected;
indicates the second resist film.
Claims (1)
の修正を行うに際し、修正すべき開口部分を有す
る前記遮光膜上を含む前記透光性基板上にポジ型
のレジスト膜を形成する工程と、前記透光性基板
の裏面から前記ポジ型レジスト膜に露光して、少
なくとも前記修正すべき開口部分に開口を有する
第１のレジスト膜を形成する工程と、該第１のレ
ジスト膜上に所定の材質よりなる皮膜を形成する
工程と、該皮膜の前記修正すべき開口部に対応す
る部位の上に第２のレジスト膜を選択的に形成す
る工程と、該第２のレジスト膜をマスクとして前
記皮膜の露出せる部分を除去する工程と、前記第
１及び第２のレジスト膜を除去する工程とを含む
ことを特徴とするパターン修正方法。1. When modifying the light-shielding film selectively formed on the surface of the light-transmitting substrate, forming a positive resist film on the light-transmitting substrate including the light-shielding film having the opening to be modified. a step of exposing the positive resist film from the back surface of the light-transmitting substrate to form a first resist film having an opening at least in the opening portion to be corrected; a step of forming a film made of a predetermined material; a step of selectively forming a second resist film on a portion of the film corresponding to the opening to be corrected; and a step of masking the second resist film. A pattern correction method comprising the steps of: removing an exposed portion of the film; and removing the first and second resist films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18723880A JPS57112018A (en) | 1980-12-29 | 1980-12-29 | Correction of pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18723880A JPS57112018A (en) | 1980-12-29 | 1980-12-29 | Correction of pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57112018A JPS57112018A (en) | 1982-07-12 |
| JPS6161694B2 true JPS6161694B2 (en) | 1986-12-26 |
Family
ID=16202466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18723880A Granted JPS57112018A (en) | 1980-12-29 | 1980-12-29 | Correction of pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57112018A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7489359B2 (en) * | 2021-08-04 | 2024-05-23 | 株式会社エスケーエレクトロニクス | How to fix the pattern |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5066449A (en) * | 1973-10-17 | 1975-06-04 | ||
| JPS5654439A (en) * | 1979-10-11 | 1981-05-14 | Fujitsu Ltd | Hard mask correcting method |
| JPS5670554A (en) * | 1979-11-15 | 1981-06-12 | Fujitsu Ltd | Mask pattern correction method |
-
1980
- 1980-12-29 JP JP18723880A patent/JPS57112018A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5066449A (en) * | 1973-10-17 | 1975-06-04 | ||
| JPS5654439A (en) * | 1979-10-11 | 1981-05-14 | Fujitsu Ltd | Hard mask correcting method |
| JPS5670554A (en) * | 1979-11-15 | 1981-06-12 | Fujitsu Ltd | Mask pattern correction method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57112018A (en) | 1982-07-12 |
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