JPS6344824Y2 - - Google Patents
Info
- Publication number
- JPS6344824Y2 JPS6344824Y2 JP1985028524U JP2852485U JPS6344824Y2 JP S6344824 Y2 JPS6344824 Y2 JP S6344824Y2 JP 1985028524 U JP1985028524 U JP 1985028524U JP 2852485 U JP2852485 U JP 2852485U JP S6344824 Y2 JPS6344824 Y2 JP S6344824Y2
- Authority
- JP
- Japan
- Prior art keywords
- pellicle
- reticle
- dust
- film
- rubber layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 15
- 238000003780 insertion Methods 0.000 claims description 12
- 230000037431 insertion Effects 0.000 claims description 12
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 239000000428 dust Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000000020 Nitrocellulose Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Description
【考案の詳細な説明】
(産業上の利用分野)
本考案はレチクルへの貼着に際して不良の発生
を無くするペリクルの構造に関する。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a pellicle structure that eliminates the occurrence of defects when attached to a reticle.
大量の情報を高速に処理するため情報処理装置
は益々進歩して小形化されており、これと共に使
用部品も小形化され、特にIC,LSIなどの半導体
素子はこの傾向が著しい。 In order to process large amounts of information at high speed, information processing devices are becoming more and more advanced and smaller, and along with this, the parts used are also becoming smaller, and this trend is particularly noticeable in semiconductor devices such as ICs and LSIs.
ここで微少な単位素子およびこれを結ぶ導体パ
ターンなどの電子回路は薄膜形成技術と写真食刻
技術(ホトリソグラフイ)とを用いて形成されて
いるものが多い。 Here, electronic circuits such as minute unit elements and conductor patterns connecting them are often formed using thin film formation technology and photolithography.
この写真食刻技術は例を半導体素子にとると被
処理半導体基板上にスピンコート法などにより、
薄くレジストを被覆し、これに予め形成してある
ホトマスクを通して紫外線などを照射してクロー
ム(Cr)マスクに描かれている電子回路パター
ンをレジスト膜に投影露光せしめ、ネガ形レジス
トを用いる場合は露光部が現像液に不溶となり、
一方ポジ形レジストを用いる場合は可溶となる現
象を利用してレジスト膜のパターンを作り、この
レジストをマスクとして化学エツチング或いはド
ライエツチングを行つて半導体基板或いはこの上
に形成してある金属膜などをエツチングして微細
パターンが作られている。 For example, in the case of semiconductor devices, this photo-etching technology uses a spin coating method etc. on a semiconductor substrate to be processed.
A thin layer of resist is coated, and the electronic circuit pattern drawn on the chrome (Cr) mask is projected onto the resist film by irradiating it with ultraviolet rays through a pre-formed photomask. part becomes insoluble in the developer,
On the other hand, when using a positive resist, a resist film pattern is created by utilizing the soluble phenomenon, and chemical etching or dry etching is performed using this resist as a mask to remove a semiconductor substrate or a metal film formed thereon. Fine patterns are created by etching.
ここで、投影露光に使用するCrマスクパター
ンはレチクルと呼ばれており、またこのレチクル
を挟んで防塵のために設けられているカバー体を
ペリクルと呼んでいる。 Here, the Cr mask pattern used for projection exposure is called a reticle, and the cover body provided across the reticle for dust prevention is called a pellicle.
すなわちレチクルは厚さは約3mmで大きさが5
インチ角或いは6インチ角の透明石英板上に蒸着
法などにより酸化クローム(Cr2O3)の反射防止
膜を備えたCrの薄膜を形成し、写真食刻技術を
用いて原画となるCrマスクを形成したもので、
これを被処理基板上に1/5或いは1/10の大きさに
縮小露光することにより微細パターンが作られ
る。 In other words, the reticle is approximately 3mm thick and 5mm in size.
A thin Cr film with an anti-reflection film of chromium oxide (Cr 2 O 3 ) is formed on an inch square or 6 inch square transparent quartz plate using a vapor deposition method, and then a Cr mask that becomes the original image is created using photo-etching technology. It is formed by
A fine pattern is created by reducing the size of this to 1/5 or 1/10 and exposing it on the substrate to be processed.
ここでレチクルはステツパと言われる投影露光
機に装着され、被処理基板を縮小露光の1ピツチ
分づつ移動させて投影露光を行い同一のパターン
が連続的に作られているが、この場合にレチクル
上に塵埃が存在すると、この塵埃も同様に投影露
光されて不良品となる。 Here, the reticle is attached to a projection exposure machine called a stepper, and the same pattern is continuously created by moving the substrate to be processed one pitch at a time for reduction exposure, and in this case, the reticle If there is dust on the surface, this dust will also be projected and exposed, resulting in a defective product.
そこでレチクルを挟み、この表面及び裏面に透
明なペリクル膜をもつカバー体を設け、塵埃の影
響を減殺している。 Therefore, a cover body with a transparent pellicle film on the front and back surfaces of the reticle is provided to sandwich the reticle, thereby reducing the influence of dust.
すなわち光源よりの投射光をレンズを使用して
集束し、レチクル面で焦点を結ぶようにすること
により仮令ペリクル膜の上に塵埃が存在していて
も焦点のずれにより所謂るピンボケとなりレチク
ルの投影露光には悪影響を与えぬよう構成されて
いる。 In other words, by converging the projected light from the light source using a lens and focusing it on the reticle surface, even if there is dust on the pellicle film, the focus will shift and the reticle will become out of focus. It is constructed so as not to adversely affect exposure.
かかる目的でペリクルはレチクルの両面に装着
されているが、装着する過程で塵埃が侵入してレ
チクルに付着したり、或いはレチクルの目視検査
では見いだせず、ペリクル装着後の検査で検出さ
れることがあり、このような場合はペリクルの張
替えが必要となる。 Pellicles are attached to both sides of the reticle for this purpose, but dust may enter the reticle during the attachment process and adhere to the reticle, or it may not be detected by visual inspection of the reticle but may be detected by inspection after the pellicle is attached. In such cases, the pellicle needs to be replaced.
然し、ペリクルは高価であるため張替えを必要
としないペリクル装着法が要望されている。 However, since pellicles are expensive, there is a need for a pellicle attachment method that does not require relining.
第2図はレチクル1の表裏面に装着したペリク
ル2の状態を示す断面図である。
FIG. 2 is a cross-sectional view showing the state of the pellicle 2 attached to the front and back surfaces of the reticle 1.
すなわちCr製のマスクパターン3を下面に備
えた石英製のレチクル1の両面にアルミニウム
(Al)合金製の枠体4の上側にニトロセルローズ
からなるペリクル膜5を備え、枠体4の下側に接
着層6があり、接着層6によつて両面からレチク
ル1の基板に接着させることによりマスクパター
ン3の表裏面に塵埃が付着するのを防いでいる。 That is, a pellicle film 5 made of nitrocellulose is provided on both sides of a reticle 1 made of quartz having a mask pattern 3 made of Cr on its lower surface, and a pellicle film 5 made of nitrocellulose is provided on the upper side of a frame 4 made of aluminum (Al) alloy. There is an adhesive layer 6, which prevents dust from adhering to the front and back surfaces of the mask pattern 3 by adhering it to the substrate of the reticle 1 from both sides.
然し、先に記したようにペリクル装着後に行う
レーザビームを用いるマスク検査において塵埃の
存在が検出され、レチクル1が不良となると、ペ
リクル2を剥離して再び張り直しを行う必要があ
り、工数を要すると共にペリクル5が高価で、再
使用できないために改善が必要であつた。 However, as mentioned above, if the presence of dust is detected during the mask inspection using a laser beam after attaching the pellicle, and the reticle 1 becomes defective, it is necessary to peel off the pellicle 2 and reapply it, which saves man-hours. In addition, the pellicle 5 is expensive and cannot be reused, so an improvement is necessary.
今までに説明してようにペリクル装着後に塵埃
が検出された場合はペリクルを剥離し、レチクル
の表面に窒素(N2)ガスなどの清浄ガスをノズ
ルより吹きださせ、清浄化した後に再び新しいペ
リクルを装着する必要があり、この場合に従来の
ペリクルは再使用できないことが問題である。
As explained above, if dust is detected after attaching the pellicle, remove the pellicle, blow out a cleaning gas such as nitrogen (N 2 ) gas from the nozzle onto the surface of the reticle, clean it, and then reinstall the reticle with a new one. It is necessary to attach a pellicle, and the problem is that conventional pellicles cannot be reused in this case.
上記の問題点は下面にレチクルに接着する接着
層を備えた下部ペリクルと上面にペリクル膜を備
え且つ下面が該下部ペリクルの上面に着脱可能な
上部ペリクルとからなるペリクルにおいて、該下
部ペリクルの上面と該上部ペリクルの下面にゴム
層が設けられ、一方のペリクルに固定され且つ該
ゴム層を貫いて突き出る挿入ピンが、それに対応
する他方のペリクルの位置に該ゴム層を貫いて形
成された挿入孔に嵌合し、該ゴム層同志が密着し
てなる着脱可能なペリクルを使用することより解
決することができる。
The above problem occurs when the upper pellicle is composed of a lower pellicle with an adhesive layer on the lower surface that adheres to the reticle, and an upper pellicle with a pellicle film on the upper surface and whose lower surface is detachable from the upper surface of the lower pellicle. and a rubber layer provided on the lower surface of the upper pellicle, an insertion pin fixed to one pellicle and protruding through the rubber layer, and an insertion pin formed through the rubber layer at a corresponding position of the other pellicle. This problem can be solved by using a removable pellicle that fits into the hole and has the rubber layers in close contact with each other.
本考案にかかるペリクルは従来のものがAl合
金製の枠体の単層から構成されているのに対し、
上部ペリクルと下部ペリクルの二層構造をとり両
者を着脱可能とすることによりペリクル膜の再使
用を可能にすると共に、ゴム層を設けることによ
り両者の着脱が簡単であるにもかかわらず着時の
密着を確実にして異物の混入を避けることができ
る。
The pellicle according to the present invention is composed of a single layer of an Al alloy frame, whereas the conventional pellicle is composed of a single layer of an Al alloy frame.
The two-layer structure of the upper pellicle and lower pellicle allows both to be attached and detached, making it possible to reuse the pellicle membrane, and the provision of a rubber layer makes it easy to attach and detach both. It is possible to ensure close contact and avoid contamination of foreign substances.
第1図は本考案の構成を示す実施例で同図Bは
下部ペリクルの平面図、また同図AはX−X′線
位置における上部ペリクルおよび下部ペリクルの
断面図である。
FIG. 1 is an embodiment showing the structure of the present invention, FIG. 1B is a plan view of the lower pellicle, and FIG. 1A is a sectional view of the upper pellicle and the lower pellicle taken along line X-X'.
すなわち本実施例の場合、寸法が5インチ角の
レチクル7の上に8cm角のペリクルが装着される
が、このペリクルは上部ペリクル8と下部ペリク
ル9に分離して形成されており両者は下部ペリク
ル9の上面にありバネ機構をもつ挿入ピン10に
よつて結合し、一体化する構造となつている。 In other words, in this embodiment, an 8 cm square pellicle is mounted on a 5 inch square reticle 7, but this pellicle is formed separately into an upper pellicle 8 and a lower pellicle 9, both of which are connected to the lower pellicle. The structure is such that they are connected to each other by an insertion pin 10 having a spring mechanism on the upper surface of the two parts 9 and are integrated.
すなわち下部ペリクル9には枠体の四隅と各辺
の中間部に直径2mm,高さ3mmの挿入ピン10が
備えられており、一方これと対応する上部ペリク
ル8の下面には挿入ピン10が嵌合する挿入孔1
1が設けられている。 That is, the lower pellicle 9 is provided with insertion pins 10 having a diameter of 2 mm and a height of 3 mm at the four corners of the frame and at the middle of each side, while the insertion pins 10 are fitted into the corresponding lower surface of the upper pellicle 8. Matching insertion hole 1
1 is provided.
ここで下部ペリクル9の下面には接着層12が
あり、また挿入ピン10が備えられている上面に
は厚さ約0.5mmのゴム層13が設けられている。 Here, an adhesive layer 12 is provided on the lower surface of the lower pellicle 9, and a rubber layer 13 with a thickness of about 0.5 mm is provided on the upper surface where the insertion pin 10 is provided.
また上部ペリクル8の下面にも厚さが約0.5mm
のゴム層14が設けられていて挿入ピン10の嵌
合後において両者が密着し、塵埃が侵入しないよ
う構成されている。 Also, the thickness of the lower surface of the upper pellicle 8 is approximately 0.5 mm.
A rubber layer 14 is provided so that after the insertion pin 10 is fitted, the two come into close contact with each other to prevent dust from entering.
また上部ペリクル8の上面には従来と同様にペ
リクル膜5が張られている。 Further, a pellicle film 5 is placed on the upper surface of the upper pellicle 8 as in the conventional case.
なお、本実施例の場合、下部ペリクル9の高さ
は3mm、上部ペリクル8の高さは5mm、または
Al合金からなるペリクル枠体の厚さは6mmであ
る。 In this example, the height of the lower pellicle 9 is 3 mm, the height of the upper pellicle 8 is 5 mm, or
The thickness of the pellicle frame made of Al alloy is 6 mm.
そしてペリクルの装着法としてはN2ガスの吹
き付けにより塵埃の付着をなくしたレチクル7の
マスクパターン3を中心として下部ペリクル9を
接着層12を用いて張り付けた後、これに上部ペ
リクルを位置決めして挿入し、嵌合させる。 The method for attaching the pellicle is to attach the lower pellicle 9 using an adhesive layer 12 centering on the mask pattern 3 of the reticle 7, which has been freed from dust by spraying with N 2 gas, and then position the upper pellicle to this. Insert and mate.
そしてレーザ光を用いたマスクパターン3の自
動検査において塵埃が検出された場合は上部ペリ
クル8を外し、N2等の清浄ガスを吹きつけて清
浄化を行い、その後再び上部ペリクル8を嵌合さ
せればよい。 If dust is detected during automatic inspection of the mask pattern 3 using laser light, remove the upper pellicle 8, clean it by blowing a cleaning gas such as N 2 , and then fit the upper pellicle 8 again. That's fine.
このように本考案になるペリクルは従来と異な
り二層構成されているため中に塵埃が存在する場
合でも清浄処理を行つた後引き続いて使用するこ
とができる。 Unlike conventional pellicles, the pellicle of the present invention has a two-layer structure, so even if dust is present inside, it can be used continuously after cleaning.
以上記したように本考案に係るペリクルの使用
によりペリクルの装着不良を無くすことができ、
これにより収率を従来の約90%から100%に向上
することが可能となる。
As described above, by using the pellicle according to the present invention, it is possible to eliminate pellicle attachment defects,
This makes it possible to improve the yield from about 90% to 100%.
第1図は本考案に係るペリクルをレチクルに装
着する状態を示すもので、同図Bは下部ペリクル
の平面図、同図AはこのX−X′位置における上
部ペリクルと下部ペリクルの断面図、第2図は従
来のペリクルの断面図、である。
図において、1,7はレチクル、2はペリク
ル、3はマスクパターン、4は枠体、5はペリク
ル膜、6,12は接着層、8は上部ペリクル、9
は下部ペリクル、10は挿入ピン、11は挿入
孔、13はゴム層、である。
Figure 1 shows the state in which the pellicle according to the present invention is attached to a reticle, Figure B is a plan view of the lower pellicle, Figure A is a sectional view of the upper and lower pellicles at the X-X' position, FIG. 2 is a cross-sectional view of a conventional pellicle. In the figure, 1 and 7 are reticles, 2 is a pellicle, 3 is a mask pattern, 4 is a frame, 5 is a pellicle film, 6 and 12 are adhesive layers, 8 is an upper pellicle, and 9
1 is a lower pellicle, 10 is an insertion pin, 11 is an insertion hole, and 13 is a rubber layer.
Claims (1)
ペリクルと、上面にペリクル膜を備え且つ下面が
該下部のペリクルの上面に着脱可能な上部ペリク
ルとからなるペリクルにおいて、該下部ペリクル
の上面と該上部ペリクルの下面にゴム層が設けら
れ、一方のペリクルに固定され且つ該ゴム層を貫
いて突き出る挿入ピンが、それに対応する他方の
ペリクルの位置に該ゴム層を貫いて形成された挿
入孔に嵌合し、該ゴム層同志が密着してなること
を特徴とする着脱可能なペリクル。 In a pellicle consisting of a lower pellicle having an adhesive layer on the lower surface that adheres to the reticle, and an upper pellicle having a pellicle film on the upper surface and whose lower surface is detachable from the upper surface of the lower pellicle, the upper surface of the lower pellicle and the upper A rubber layer is provided on the lower surface of the pellicle, and an insertion pin fixed to one pellicle and protruding through the rubber layer is fitted into an insertion hole formed through the rubber layer at a corresponding position of the other pellicle. A removable pellicle characterized in that the rubber layers are in close contact with each other.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985028524U JPS6344824Y2 (en) | 1985-02-28 | 1985-02-28 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985028524U JPS6344824Y2 (en) | 1985-02-28 | 1985-02-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61145936U JPS61145936U (en) | 1986-09-09 |
JPS6344824Y2 true JPS6344824Y2 (en) | 1988-11-21 |
Family
ID=30526478
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985028524U Expired JPS6344824Y2 (en) | 1985-02-28 | 1985-02-28 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6344824Y2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103246157A (en) * | 2013-05-21 | 2013-08-14 | 上海和辉光电有限公司 | Dustproof film framework, optical mask and installation method thereof |
SG11201701805QA (en) | 2014-09-19 | 2017-04-27 | Mitsui Chemicals Inc | Pellicle, production method thereof, exposure method |
WO2016043301A1 (en) * | 2014-09-19 | 2016-03-24 | 三井化学株式会社 | Pellicle, pellicle production method and exposure method using pellicle |
JP6274079B2 (en) * | 2014-11-04 | 2018-02-07 | 日本軽金属株式会社 | Pellicle support frame and manufacturing method |
CN115840333A (en) | 2014-11-17 | 2023-03-24 | Asml荷兰有限公司 | Mask assembly |
CN113721420A (en) * | 2015-02-03 | 2021-11-30 | Asml荷兰有限公司 | Mask assembly and associated method |
-
1985
- 1985-02-28 JP JP1985028524U patent/JPS6344824Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS61145936U (en) | 1986-09-09 |
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