JPS6354722A - Manufacture of working mask for photolithography - Google Patents
Manufacture of working mask for photolithographyInfo
- Publication number
- JPS6354722A JPS6354722A JP61198369A JP19836986A JPS6354722A JP S6354722 A JPS6354722 A JP S6354722A JP 61198369 A JP61198369 A JP 61198369A JP 19836986 A JP19836986 A JP 19836986A JP S6354722 A JPS6354722 A JP S6354722A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- working
- pattern
- rays
- master
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000206 photolithography Methods 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 abstract description 7
- 239000004926 polymethyl methacrylate Substances 0.000 abstract description 7
- 229910052804 chromium Inorganic materials 0.000 abstract description 6
- 239000011651 chromium Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000428 dust Substances 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は半導体装置の製造に直接用いられるフォトリソ
グラフィ用ワーキングマスクの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for manufacturing a working mask for photolithography that is directly used for manufacturing semiconductor devices.
（ロ）従来技術
半導体装置、特にミクロンオーダの高い精度のパターン
を有するＶＬＳＩ、ＵＬＳＩの製造の際に用いられるフ
ォトマスクは通常、下記する方法で作られる。(b) Prior Art Photomasks used in the manufacture of semiconductor devices, particularly VLSIs and ULSIs having highly accurate patterns on the order of microns, are usually manufactured by the method described below.
先ｆｃＡＤに依ってマスクパターンを起こし、そのマス
クパターンのデータを基にした電子ビーム描画で電子線
レジストを塗布したマスクブランクス上にバター〉・描
画を行ない、現像後、クロム膜ノエッチングを行なって
マスクマスクを得、その後このマスクマスクをフォトレ
ジストを塗布したマスクブランクスに密著させて紫外線
露光し、統いてマスクパターンの等倍転写を行ない、レ
ジストの現像後、クロム膜のウェットエツチングを行な
って、実際の半導体ウェファにパターン転写する為のア
ーキングマスクを製造している。尚、上記マスクマスク
の一例は、ＩＥＥＥ ＥＬＥＣＴＲＯＮＤＥＶＩＣＥ
ＬＥＴＴＥＲ５，ＶＯＬ、ＥＤＬ−６，Ｎｏ、７．ＪＵ
ＬＹ １９８５Ｐ、 ３５３〜Ｐ、 ３５５に示されて
いる。First, a mask pattern was created using fcAD, and butter was drawn on the mask blank coated with electron beam resist using electron beam drawing based on the data of the mask pattern. After development, the chrome film was etched. After obtaining a mask mask, this mask mask is closely adhered to a mask blank coated with photoresist and exposed to ultraviolet rays, the mask pattern is transferred to the same size as before, and after developing the resist, wet etching of the chrome film is performed. , manufactures arcing masks for transferring patterns onto actual semiconductor wafers. Incidentally, an example of the above-mentioned mask is IEEE ELECTRON DEVICE.
LETTER5, VOL, EDL-6, No, 7. J.U.
LY 1985P, 353-P, 355.
（ハ）発明が解決しようとする問題点
マスクマスクからワーキングマスクを製造する際には、
上記した如く紫外線を用いた密若露光を行なうが、その
波長の関係からミクロン以下のすブミクロンオーダの線
ＩｉをＩ寺つパターンをマスクマスクからワーキングマ
スクに十分な精度で忠実に転写する二七は物理的に不可
能である。またマスクマスクとワーキングマスクとを密
着させるためにマスク密着面上にゴミがあるとそのゴミ
が欠陥としてワーキングマスクに転写きれるばかりでは
なく、マスクマスクをも傷付けてしまう恐れがある。マ
スタマスクを傷付けるとその後のワーキングマスクは全
て欠陥品となってしまうので、再度マスクマスクを作り
直さなければならない。このマスクマスクの傷付きを防
ぐにはマスクマスクと′ノーキングマスクとの間にギャ
ップを設けるプロキシミティー露光を用いれば良いが、
転写時の解像度が更に低下してしまう。(c) Problems to be solved by the invention When manufacturing a working mask from a mask mask,
As mentioned above, high-density exposure is performed using ultraviolet rays, but due to the wavelength of the ultraviolet rays, it is possible to faithfully transfer a pattern of submicron-order lines Ii from the mask mask to the working mask with sufficient accuracy. Seven is physically impossible. Furthermore, if there is dust on the mask contact surface for bringing the mask and working mask into close contact, the dust may not only be transferred to the working mask as a defect, but also damage the mask. If the master mask is damaged, all subsequent working masks will be defective, so the mask must be remade. To prevent this mask from being scratched, proximity exposure can be used to create a gap between the mask and the noking mask.
The resolution during transfer is further reduced.
（ニ）問題魚を解決するための手段
この発明は、ＣＡＤにて起こされたマスクパターンをＸ
線露光用マスクに描いてマスタマスクとし、該マスクマ
スクに描かれたマスクパターンをフォトマスクブランク
にプロキシミティー露光に依ってＸ線露光するものであ
る。(d) Means for solving problem fish
A master mask is drawn on a line exposure mask, and the mask pattern drawn on the mask is exposed to X-rays on a photomask blank by proximity exposure.
（ホ）作用
本発明に依れば、サブミクロ・ンの線幅のパターンを有
するワーキングマスクを高い精度で作ることか出来ると
同時に、ゴミの存在に依るマスクの欠陥の発生を防止し
得る。(E) Function According to the present invention, it is possible to fabricate a working mask having a pattern with a submicron line width with high accuracy, and at the same time, it is possible to prevent defects in the mask due to the presence of dust.
（へ）実施例
本発明に用いるマスクマスクは、ＣＡＤにて起こされた
マスクパターンをＸ線露光用マスクに描いて得でいる（
第１図）。より具体的に説明すると、支持枠基板として
の厚み約３００μｍのシリコン基板（１）の−表面に窒
化シリコンからなるマスク形成用ベース層く２）を数μ
ｍの厚みに設け、このマスク形成用ベース層（２）上に
Ｘ線吸収層としての重金属、例えは金層を全面に１μｍ
の厚みに蒸着後、ＣＡＤにて起こされたマスクパターン
（３）を電子線描画法に依ってパターニングし、最後に
シリコン基板（１）のマスクパターン（３）に該当する
個所を裏面からエツチング除去してマスタマスク（４）
を得ている。(f) Example Mask The mask used in the present invention can be obtained by drawing a mask pattern created by CAD on an X-ray exposure mask (
Figure 1). To explain more specifically, a base layer 2) for forming a mask made of silicon nitride is coated on the surface of a silicon substrate (1) with a thickness of about 300 μm as a supporting frame substrate.
m thick, and a heavy metal layer, for example a gold layer, is formed as an X-ray absorbing layer on the entire surface with a thickness of 1 μm on the mask forming base layer (2).
After vapor deposition to a thickness of , the mask pattern (3) created using CAD is patterned using electron beam lithography, and finally the portions of the silicon substrate (1) corresponding to the mask pattern (3) are removed by etching from the back surface. Master mask (4)
I am getting .
一方、ワーキングマスクの素材として、石英基板（５）
表面に約１０００人のクロミウム膜（６）をスパッタリ
ングしたフォトマスクブランク上にポジ型レジスト、例
えばＰ ＭＭ Ａ膜（７）を約５０００人塗布したもの
を用意し、このマスク素材に対して第１図で示したマス
タマスク〈４）を用いたＸ線（８）に依るプロキンミテ
ィー露光を行なう（茶２図）。この時のプロキシミティ
ーギャップは３０μｍで、線源はパラジウムの特性Ｘ線
が用いられる。On the other hand, quartz substrate (5) is used as a material for the working mask.
A photomask blank on which about 1,000 chromium films (6) have been sputtered is coated with about 5,000 positive resists, such as PMM A film (7), and the first layer is applied to this mask material. Prokinmity exposure is performed using X-rays (8) using the master mask (4) shown in the figure (brown figure 2). The proximity gap at this time is 30 μm, and a characteristic X-ray of palladium is used as the radiation source.
続いてＰＭＭＡ膜（７）を現像（第３図）して後、露出
したクロミウム膜（６）をウェットエツチング（第４図
）し、残ったＰＭＭＡ膜（７〉を除去してマスクパター
ン（９）を有するフォトリソグラフィ用ワーキングマス
クを得る（第５図）６上記したマスクマスクとしてのＸ
線露光用マスクは最も一般的な構造のもので、他の構造
のものでも本発明を逸脱するものではない。またワーキ
ングマスクのクロミウム膜（６）の代わりにタンタルが
用い得るし、ＰＭＭＡ膜（７）の他にＣＭＳ。Next, after developing the PMMA film (7) (Fig. 3), wet etching the exposed chromium film (6) (Fig. 4), removing the remaining PMMA film (7>), and forming a mask pattern (9). ) to obtain a working mask for photolithography (FIG. 5) 6.
The line exposure mask has the most common structure, and other structures do not depart from the scope of the present invention. Further, tantalum can be used instead of the chromium film (6) of the working mask, and CMS can be used in place of the PMMA film (7).
ＤＣＯＰＡ、ＣＯＰなどを使うことが出来る。更にＸ線
露光工程に用いるＸ線としては、パラジウムの特性Ｘ線
のみならず、アルミニウム、シリコン、モリブデン等の
特性Ｘ線、若しくはガスプラズマＸ線源、シンクロトロ
ン放射に依るＸ線等も用い得る。DCOPA, COP, etc. can be used. Furthermore, as the X-rays used in the X-ray exposure process, not only the characteristic X-rays of palladium, but also characteristic X-rays of aluminum, silicon, molybdenum, etc., or X-rays from a gas plasma X-ray source, synchrotron radiation, etc. can be used. .
（ト）発明の効果
本発明は以上の説明から明らかな如く、マスクマスクか
らワーキングマスクへの転写は紫外線に較へて波長が遥
かに短いＸ線を用いているので、サブミクロンの線幅を
持つパターンを高精度に７＝キングマスク上に転写出来
る。またクリーンルーム内に存在する微小なゴミは殆ど
が軽い元素のものであり、Ｘ線はそのゴミを透過し得る
ので、マスクパターン転写時にゴミの存在に依るパター
ン欠陥を減少せしめることが出来る。更に本発明の転写
にはプロキシミテイー露光が採用されているので、転写
時にマスタマスク並びにワーキングマスクを傷付ける恐
れは一切無い。(g) Effects of the Invention As is clear from the above description, the present invention uses X-rays, which have a much shorter wavelength than ultraviolet rays, for transferring from the mask mask to the working mask, so submicron line widths can be achieved. The pattern can be transferred onto the 7=king mask with high precision. Further, most of the minute dust existing in the clean room is of light elements, and since X-rays can pass through the dust, pattern defects due to the presence of dust can be reduced during mask pattern transfer. Furthermore, since proximity exposure is employed in the transfer of the present invention, there is no risk of damaging the master mask or working mask during transfer.
第１図は本発明に用いるマスクマスクの断面図、第２図
はマスクマスクからワーキングマスクへの転写二秘を示
す断面図、第３図〜第５図はワーキングマスクの製造工
程を示す断面図である。
（３）（９）・・・マスクパターン、
（４）・・・マスタマスク、
（６）・・・クロミウム膜、
（７）・・・ＰＭＭＡ膜、
（８〉・・・Ｘ線。Fig. 1 is a cross-sectional view of the mask used in the present invention, Fig. 2 is a cross-sectional view showing the two secrets of transfer from the mask mask to the working mask, and Figs. 3 to 5 are cross-sectional views showing the manufacturing process of the working mask. It is. (3) (9)...Mask pattern, (4)...Master mask, (6)...Chromium film, (7)...PMMA film, (8>...X-ray.
Claims (1)
ィ用ワーキングマスクを製造するに際して、ＣＡＤにて
起こされたマスクパターンをＸ線露光用マスクに描いて
マスタマスクとし、該マスタマスクに描かれたマスクパ
ターンをフオトマスクブランクにプロキシミティー露光
に依つてＸ線露光することを特徴としたフォトリソグラ
フィ用ワーキングマスクの製造方法。(1) When manufacturing a working mask for photolithography that is directly used in the manufacture of semiconductor devices, a mask pattern created using CAD is drawn on an X-ray exposure mask as a master mask, and the mask pattern drawn on the master mask is used. A method for producing a working mask for photolithography, comprising exposing a photomask blank to X-rays by proximity exposure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61198369A JPS6354722A (en) | 1986-08-25 | 1986-08-25 | Manufacture of working mask for photolithography |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61198369A JPS6354722A (en) | 1986-08-25 | 1986-08-25 | Manufacture of working mask for photolithography |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6354722A true JPS6354722A (en) | 1988-03-09 |
Family
ID=16389962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61198369A Pending JPS6354722A (en) | 1986-08-25 | 1986-08-25 | Manufacture of working mask for photolithography |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6354722A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094078A (en) * | 2013-01-13 | 2013-05-08 | 况维维 | Gallium nitride extension preparation method for semiconductor device |
| CN114545745A (en) * | 2022-03-01 | 2022-05-27 | 重庆邮电大学 | Exposure resist modification process and liquid-phase micro-nano processing equipment |
-
1986
- 1986-08-25 JP JP61198369A patent/JPS6354722A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094078A (en) * | 2013-01-13 | 2013-05-08 | 况维维 | Gallium nitride extension preparation method for semiconductor device |
| CN114545745A (en) * | 2022-03-01 | 2022-05-27 | 重庆邮电大学 | Exposure resist modification process and liquid-phase micro-nano processing equipment |
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