JP3412898B2 - Method and apparatus for manufacturing reflective mask, exposure apparatus and device manufacturing method using the reflective mask - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflection type mask used in a lithographic apparatus for irradiating a reflection type mask with X-rays or vacuum ultraviolet rays and reducing and projecting it onto a resist by a reflection mirror, a method for producing the reflection type mask and the method. The present invention relates to an exposure apparatus using.

[0002]

2. Description of the Related Art In lithography for optically transferring a fine pattern to a resist to manufacture a semiconductor device,
With higher integration and miniaturization of semiconductor elements, exposure apparatuses using X-rays or vacuum ultraviolet rays having higher resolution have come to be used. Such an exposure apparatus irradiates a reflection type mask on which a transfer pattern is formed with X-rays or vacuum ultraviolet rays from a light source such as a synchrotron or laser plasma, and a plurality of X-rays or vacuum ultraviolet rays reflected by the irradiation. The image is reduced and projected onto the resist by the reflection mirror of.

[0003] As the reflection type mask used for the exposure apparatus as described above, it was something absorber according to the transfer pattern on the reflection mirror, or an antireflection film was found provided. A multilayer film in which a plurality of substances are alternately laminated is used as the reflecting mirror.

As a method of repairing defects in the production of a reflective mask, there is one described in Japanese Patent Application Laid-Open No. 5-55120 shown in FIG.

In FIG. 14, a lower multilayer film 1402 which is a reflecting member, a non-reflector 1403, and an upper multilayer film 1404 which is a reflecting member are continuously formed on a substrate 1401, and then the upper multilayer film 1404 is formed as desired. It is formed into a pattern to serve as a reflection portion.

When a partial defect such as defective reflection occurs in the pattern formed by the upper multilayer film 1404, the lower multilayer film 1402 is exposed by removing both the upper multilayer film 1404 and the non-reflector 1403 at the defective portion. Lower multilayer film 1
Defects are repaired by using 402 as a reflective portion of a reflective mask.

The structure of the reflection type mask is roughly classified into FIG.
It can be classified into three types, 5 (a), (b), and (c).

In the structure shown in FIG. 15A, the substrate 150
1 is laminated with a reflective portion 1502 formed of a multilayer film, and a patterned non-reflective portion 1503 is further formed thereon.
Are laminated. In the structure shown in FIG. 15B, a patterned reflecting portion 1505 formed of a multilayer film is formed on the substrate 1504. In addition, FIG.
In the structure shown in (c), a reflecting portion 1507 made of a multilayer film is laminated on the substrate 1506, and the regularity of the layer structure of the reflecting portion 1507 is partially destroyed, whereby the reflecting portion 150 is formed.
The patterned non-reflective portion 1508 is formed in FIG.

Defects occurring in the reflective mask having the above structure will be described.

In the reflective mask shown in FIG. 16, the mask pattern is formed by the reflective pattern 1609 and the non-reflective pattern 1610, but the originally non-reflective portion is reflected and the originally reflective portion is non-reflective. There are black defects.

The causes of these defects are classified in the production of the reflective mask. First, when there is a defect on the substrate of the reflective mask, and second, when the multilayer film of the reflective portion is formed. Thirdly, the case occurs when the desired pattern of the reflective portion and the non-reflective portion is formed.

As shown in Table 1, the third method of repairing a defect that occurs when forming a desired pattern of a reflective portion and a non-reflective portion differs depending on the structure and manufacturing method of the reflective mask.

[0013]

[Table 1]

In particular, the repair of the black defect in the two types of FIGS. 15B and 15C is extremely difficult because it is performed by forming a reflective portion, that is, a multilayer film structure, in the defective portion again.

In order to avoid the above difficulties, the one described in the above-mentioned Japanese Patent Laid-Open No. 5-55120 is shown in FIG.
In the reflective mask of the type shown in (b),
The repair is performed by providing a multilayer film under the multilayer film that forms the reflection portion having a desired pattern, and exposing the underlying multilayer film at the defect portion.

[0016]

However, the above-described defect repairing method has a problem that the reflective mask becomes expensive because there is a step of forming the multilayer film twice in the production of the reflective mask. . The defects of the substrate of the reflective mask, which are the first cause of defects, are mainly caused by external defects due to attached dust and unevenness, and the film surface formed on the substrate is flat. It does not become. The exposure light is not normally reflected by the reflection portion formed on the substrate having such a defect, and an accurate pattern cannot be transferred onto the wafer.

As a matter of course, even if two reflective multilayer films are formed, the reflective multilayer film close to the substrate side is likely to be strongly influenced by the defect of the substrate. Therefore, when the defect is caused by the substrate defect, the defect cannot be repaired. There is a problem.

The substrate of the reflective mask is manufactured by polishing. Further, since the multi-layer film laminated on the substrate is formed of several tens to several hundred layers, the substrate subjected to these film forming steps is very expensive, and if there are some defects, the multi-layer film is formed. It is possible to keep the cost low when using without removing.

The present invention has been made in view of the problems of the above-mentioned conventional technique, and produces a reflective mask that does not cause a problem in wafer production even if the substrate has an external defect. The object is to realize a method and an apparatus.

[0020]

[0021]

A method of manufacturing a reflective mask according to the present invention is a method of manufacturing a reflective mask having a pattern consisting of a reflective portion and a non-reflective portion, and detects a defect on a mask substrate and its position. And a step of forming a pattern so that the non-reflecting portion is located at the position where the defect is detected.

In this case, the mask substrate may be replaced if the non-reflecting portion cannot be located at the position where the defect is detected.

In any of the above cases, the pattern formation may be performed by reduction projection exposure,
Further, the pattern may be formed by electron beam drawing.

The reflection type mask manufacturing apparatus of the present invention is a reflection type mask manufacturing apparatus for manufacturing a reflection type mask having a pattern consisting of a reflection portion and a non-reflection portion, and holds a master mask and a mask substrate so as to face each other. Holding means, measuring means for measuring the defect of the mask substrate and its position, storing means for storing pattern information corresponding to the pattern of the master mask, mask substrate based on the measuring means and the storing means Of the master mask and the mask substrate so that the non-reflective portion is located at the defective portion of the mask substrate, and an exposure means for exposing and transferring the aligned master mask pattern onto the mask substrate. Characterize.

In this case, the exposure means may have a reduction projection optical system.

A reflection type mask manufacturing apparatus according to another aspect of the present invention is a reflection type mask manufacturing apparatus for manufacturing a reflection type mask having a pattern consisting of a reflection portion and a non-reflection portion,
Holding means for holding the mask substrate, measuring means for measuring a defect of the mask substrate and its position, and storage means for storing pattern information formed on the mask,
It has a drawing means for forming a pattern by electron beam drawing so that the non-reflecting portion is located at the defective portion of the mask substrate, based on the measuring means and the storage means.

The exposure apparatus of the present invention comprises a soft X-ray from a light source or
Irradiates the reflective mask with vacuum ultraviolet rays, and the reflective mask
Is an exposure apparatus for reducing and projecting the pattern of
The reflective mask is the same as the reflective mask manufacturing method described above.
It is characterized by being manufactured by

The device manufacturing method of the present invention uses the above reflection.
Use a reflective mask manufactured by the method
Exposing the wafer to a pattern and the exposed
It is characterized by having a step of developing a wafer .

[0029]

The above-mentioned problem is that soft X-rays or vacuum ultraviolet rays from a light source that generates soft X-rays or vacuum ultraviolet rays are irradiated to a reflection type mask on which a pattern as an original is formed, and the soft mask reflected by this is applied. It is generated in a reflective mask used in an exposure apparatus for reducing and projecting X-rays or vacuum ultraviolet rays on a wafer coated with a resist by a plurality of reflecting mirrors.

In the present invention, a position reference is formed on the reflection type mask (this position reference also includes the outer shape of the substrate) before forming a desired pattern consisting of a reflection part or a non-reflection part. Is stored as a position with respect to the position reference, and the defect position is stored as a position with respect to the position reference in the storage device.

The arrangement of the desired pattern composed of the reflective portion or the non-reflective portion is stored in a storage device in advance, and based on the data stored in the storage device, the defect of the reflective portion or The position of the desired pattern composed of the non-reflecting portion with respect to the position reference is determined. When it is difficult to locate all the measured defects on the non-reflection portion, the reflection mask before forming the desired pattern of the reflection portion or the non-reflection portion is removed from the reflection mask manufacturing process.

The present invention is produced by forming a reflecting portion or a non-reflecting portion in order to form a desired pattern of the reflecting portion or the non-reflecting portion at a position determined with respect to the position reference. And a manufacturing method thereof, an exposure apparatus using the reflective mask, and a semiconductor device manufactured by the exposure apparatus.

The defect of the reflective mask occurs before the formation of a desired pattern consisting of the reflective portion or the non-reflective portion. When the defect of the substrate of the reflective mask exists, the multilayer film of the reflective portion is formed. In some cases, defects may occur, and dust may adhere to the resist when it is applied.

In the present invention, the pattern defect generated during exposure and development of the resist is not the defect of the reflection type mask generated before the formation of the desired pattern consisting of the reflection portion or the non-reflection portion. Therefore, the inspection for defects is performed before or after the multi-layer film is formed or after the resist is applied.

In the reduction exposure apparatus, usually 1/5 to 5
Reduction exposure of about 1/4 is performed. A reduction exposure apparatus using soft X-rays or vacuum ultraviolet rays has a minimum line width of 0.
It is used when it becomes 2 μm or less. Therefore, the minimum line width on the mask is 1 μm or less. Therefore, a defect larger than 1/10 of the minimum line width becomes a problem in the reflective mask.

Defect inspection is usually carried out by observing with an optical microscope to compare with a pattern which is known to be free of defects, by operating an electron beam to compare with data, and by scanning a laser beam to inspect scattered light. There are ways.

In the present invention, since it is a defect that occurs before a desired pattern consisting of a reflective portion or a non-reflective portion is formed, a method of scanning a laser beam and inspecting scattered light is preferable. is not.

At least one defect found by the defect inspection has its position relative to the position reference of the reflection mask formed in advance, or the position reference of the reflection mask formed by the end of the inspection at the latest. Remembered. Obviously, its position is at least 2 in the plane from the position reference.
Determined by one piece of information. Therefore, the position reference includes a position reference of at least two points, a position reference composed of points and a straight line, and the like.

Defects of the reflective mask which are found by inspection before forming a desired pattern consisting of a reflective portion or a non-reflective portion are calculated so that the defective portion is located at the non-reflective portion of the desired pattern. The desired pattern arrangement is determined with respect to the position reference.

As a result of the calculation, when it is not possible to locate all the defective defects in the non-reflective portion, the reflective mask before the pattern formation is removed from the reflective mask forming step.

After that, when the resist is exposed to an electron beam, ultraviolet light, vacuum ultraviolet light or soft X-ray, or when a desired non-reflective portion is formed by an ion beam or the like, pattern formation is performed according to the arrangement determined with respect to the position reference. .

In the reflective mask manufactured according to the present invention having the above-mentioned characteristics, all defective defects occurring before the pattern formation are located in the non-reflective portion. When a wafer is exposed by using the reflective mask according to the invention, even if there is a defect in the reflective mask substrate, the wafer exposure does not occur, and the adverse effect of the defect in the reflective mask substrate is effectively ignored. It will be possible.

[0043]

Embodiments of the present invention will now be described with reference to the drawings.

FIG. 1 is a block diagram showing the essential structure of an embodiment of a reflective mask manufacturing apparatus according to the present invention.

In this embodiment, a projection exposure portion for transferring the circuit pattern drawn with the pattern serving as the position reference on the master mask 103 by the exposure light 101 to the working mask 104 is shown. The master mask 103 is
A working mask 10 held by a mask type confirmation device 102, which is a master mask mounting means having a function of confirming the type of the master mask 103, and faces the mask.
4 is placed on a mask moving mechanism 105 which is a mask moving means. The mask moving mechanism 105 can move the mounted object in XY with respect to the surface in the left-right direction of the drawing, and can also rotate by θ, whereby the working mask 104 can freely move within the surface facing the master mask 103. It is said that.

The mask state confirmation device 106, which is a defect position measuring means, comprises a laser oscillator as a light source, a scanning mechanism for scanning the laser output of the laser oscillator toward the working mask 104, and a means for detecting reflected laser light. (Neither is shown), a defect on the working mask 104 is detected from the scattered state of the reflected light indicated by the detecting means, and the result is output to the main controller 107. The mask type confirmation device 102 described above confirms the type of the master mask 103 by the identification mark provided on the master mask 103, and outputs the result to the main control device 107.

The main controller 107 includes a master mask 103.
Is connected to a storage device 108, which is a storage unit that stores the mask pattern corresponding to the type, to control its operation. The detection result of the mask state confirmation device 106, the confirmation content and the storage by the mask type confirmation device 102 are stored. Device 10
The working mask 104 is moved via the mask moving mechanism 105 in accordance with the stored contents of No. 8, and the exposure position thereof is controlled. With respect to the exposure light 101 as well, it is possible to perform partial exposure control by controlling the exposure light source itself that generates the exposure light 101 or the shielding means provided in the optical path.

In this embodiment, main controller 107
However, the position reference is formed on the working mask 104 by performing the above-described partial exposure of the position reference pattern formed on the mask type confirmation device 102, and FIG. 2 is manufactured according to this embodiment. It is a figure which shows the structure of the reflective mask most accurately.

There is a defect 202 which is a deposited dust on the substrate 201, a reflective portion 203 which is a reflective multilayer film is formed on the substrate 201 including the defect 202, and a non-reflective portion 204 is further formed thereon. Are formed in a laminated manner. Although the upper portion of the defect 202 is not flat, the non-reflective portion 204 is formed in the portion corresponding to the defect 202,
With the reflective mask manufactured according to this example, the adverse effects of defects during wafer exposure are effectively negligible.

The control operation of main controller 107 for forming the reflective mask having the above structure will be described with reference to FIGS. 3 and 4.

FIG. 3 shows the main controller 107 in this embodiment.
4 is a flowchart showing the exposure control operation of FIG. 4, and FIG. 4 is a view showing the positional relationship between the position reference formed on the substrate by the main controller 107 performing partial exposure and the defect confirmed by the mask state confirmation device 106. Is.

The exposure operation of this embodiment will be described with reference to FIGS. 3 and 4.

When the exposure operation starts, the main controller 10
Reference numeral 7 controls the exposure light source itself or the shielding means provided in the optical path so that the exposure light is irradiated only on the pattern portion serving as the position reference provided on the master mask 103,
Position reference 407 shown in FIG. 4 on working mask 104.
Are formed (step S301). Then, the mask state confirmation device 106 confirms the position of the defect 406 on the working mask 104 (step S302). Next, the position of the defect 406 is stored in the storage device 108 as a relative position with respect to the position reference 407 (step S30).
3), and subsequently, the mask type confirmation device 1 in the storage device 108.
The pattern stored corresponding to the mask type output by 02 is read (step S304).

Next, in step S303, the storage device 10
Working mask 104 in which all the positions of the defect 406 with respect to the position reference 407 stored in 8 become the non-reflective portion 410 of the pattern read in step S304.
Is calculated, the position of the pattern with respect to the position reference 407 is calculated, and the movement position is determined (step S30).
5). The pattern position with respect to the position reference 407 determined in step S305 is stored in the storage device 108 for use in wafer exposure using a reflective mask according to the present invention described later. Then, the position of the working mask 104 is moved via the mask moving mechanism 105 according to the above-mentioned determination contents, the exposure light 101 is irradiated, and pattern formation is performed (step S306).

When the pattern is arranged as shown by the dotted line in FIG. 4, all the defects 406 are located outside the pattern or in the non-reflecting portion 410, and the adverse effects of the defects during wafer exposure can be eliminated.

In the step of determining the movement position in the above step S305, all the defects which are problematic due to too many defects 406 or some arrangement of the defects 406 are located in the non-reflecting portion. It happens that is impossible.

When such a problem occurs, the working mask 104 before formation of the desired pattern having this defect is formed.
On the other hand, the process is removed from the reflective mask manufacturing process without continuing the reflective mask manufacturing process. Therefore, it is possible to avoid unnecessary production time.

Further, as a method for solving the problem other than the above removal, a method of reading the type of the master mask 103 having a pattern adapted to the position of each defect 406 from the storage device 108 and replacing the master mask 103 is conceivable. With such a structure, although the manufacturing time is long, the working efficiency of the working mask 104 can be improved, the yield can be increased, and the price of the manufactured semiconductor element can be reduced.

A method of forming the pattern 409 of the reflection portion and the non-reflection portion 410 shown in FIG. 5 formed as described above will be specifically described below.

As a commonly used method, first, on a multilayer film as a reflecting portion formed on a polished substrate,
The non-reflecting portion is formed by vapor deposition. As the substrate, Si
Those obtained by polishing C, quartz, Si, etc. are preferably used.

The multi-layer film as the reflecting portion is composed of a simple substance such as Mo, Ru, Rh or an alloy and S in the vicinity of the wavelength of 13 nm.
A combination of i is preferably used. In the vicinity of a wavelength of 5 nm, a simple substance such as Cr, Co or Ni or a combination of C with an alloy is preferably used. As a material for the non-reflecting portion, heavy metals such as Au, Pt and W are preferably used. When manufacturing a reflective mask of halftone type, Si,
Semiconductors and metals such as Al and Cr are also preferably used.

Next, a resist is coated, and a desired pattern is exposed with exposure light (or electron beam) in the ultraviolet and visible range. At this time, as described above, the exposure is performed so that the position of the pattern is determined in advance with respect to the position reference, that is, all the defects are positioned below the non-reflecting portion.

The resist type may be a negative type or a positive type, but after development, exposure is performed so that a desired pattern of the non-reflective portion can be obtained as a resist pattern. After that, the non-reflective member on the reflective portion is removed by dry etching to expose the multilayer film that is the reflective portion.

As a result, a reflective mask of the type shown in FIG. 13A is manufactured. In the reflective mask of the type shown in FIG. 13A, a multilayer film as a reflective portion is coated with a resist, exposed and developed, and then a non-reflective portion is vapor-deposited. It can also be manufactured by a so-called lift method, which is called out.

Similarly, in the reflective masks corresponding to FIGS. 13B and 13C, by locating the defective portion in the non-reflective portion as shown in FIGS. 6 and 7, the effect is effectively ignored. The effect of defects can be reduced as much as possible. In the production of the reflective mask shown in FIG. 7, the non-reflective portion can be produced by irradiating the converging ion beam on the reflective portion to destroy the regularity of the multilayer film as the reflective portion.

As a method for forming a desired pattern,
In addition to the above-described exposure of the resist by the electron beam and the destruction of the regularity of the multilayer film by the focused ion beam, it is natural that the exposure of the resist by ultraviolet rays, vacuum ultraviolet rays, X-rays and the like can be performed.

FIG. 8A is a diagram showing the configuration of a reduction projection exposure apparatus that exposes a wafer using the reflective mask 818 produced as described above, and FIG. 8B is the configuration of its imaging system. FIG.

The exposure light 814, which is a soft X-ray (or vacuum ultraviolet ray) emitted from a light source 813 which generates a soft X-ray (or vacuum ultraviolet ray), has two mirrors 815 and 816.
The exposure light 817 is magnified through the illumination optical system consisting of and is applied to the reflection type mask 818 held on the mask stage 825. The soft X-rays and the vacuum ultraviolet rays reflected from the reflecting portion of the reflective mask 818 are irradiated onto the wafer 819 held on the wafer stage 826 by the imaging optical system shown in FIG. The upper pattern is reduced and imaged on the wafer 819.

A reference alignment mark 822 is set on the mask stage 825, and the alignment mark 8
22 includes a light source 82 folded back by a mirror 830.
Light 821 from 0 is emitted. The reflected light of the reference alignment mark 822 interferes with the alignment mark 823 on the wafer stage 826 via the above-mentioned imaging optical system,
The intensity of the interference is measured by the detector 824, and the reflective mask 818 and the wafer 819 are aligned.

The light source 820 for performing alignment may be the same as the light source 813 for generating soft X-rays (or vacuum ultraviolet rays). The alignment mark 823 may be a soft X-ray (or vacuum ultraviolet ray) reflection pattern formed of a multilayer film on both the mask stage 825 and the wafer stage 826. Although not shown, the alignment mark 823 on the wafer stage 826 and the alignment mark on the wafer 819, the reference alignment mark 822 on the mask stage 825, and the alignment mark on the reflective mask 818 are aligned by an alignment optical system. Be done.

9A and 9B are views showing the structure of the reflective mask 818 in the above embodiment.

Substrate 905 that constitutes reflective mask 818
Are attached to the mask support plate 930. The chucking of the reflective mask 818 to the mask stage 825 is
The outer shape of the mask support plate 930 or the mask support plate 930
Performed by using the position reference 931 installed in the mask. This step is the pre-alignment of the mask. Therefore, the mask pattern formed by the non-reflective portion pattern 909 and the reflective portion pattern 910 on the reflective mask 818 is predetermined with respect to the outer shape of the mask support plate 930 or the position reference 931 installed on the mask support plate 930. Must be in position.

The reflective mask 818 in the present invention is controlled by the main controller 107 shown in FIG.
The position reference is formed on the position of the target pattern, and the position of the desired pattern composed of the reflective portion or the non-reflective portion is set as the position with respect to the position reference. Therefore, the bonding of the substrate 905 to the mask support plate 930 is performed by using the position reference 907 on the substrate 905 stored in the storage device 108 shown in FIG.
The mask support plate 930 based on the pattern position with respect to
The position reference 931 installed at the position and the pattern are set to have a predetermined positional relationship, and the alignment operation is performed based on this.

Although the control device for performing the alignment operation has not been described in particular, the storage device 108 shown in FIG. 1 may be shared by the control device or the main control device 107. With this configuration, the position reference 907 on the substrate 905 is used as a reference alignment mark, and the substrate 9 stored in the storage device 108 is used.
It is possible to perform based-out <br/> alignment operation in the pattern position relative to the position reference 907 on 05. Therefore, the mask support plate 930 as described above is used for bonding.
It is not required that the position reference 931 and the pattern installed in the position have a predetermined positional relationship, and it suffices to simply attach the patterns, and thus the working time can be shortened and the manufacturing efficiency can be improved. effective.

Next, an embodiment of a device manufacturing method using the above-described exposure apparatus will be described.

FIG. 10 shows minute devices (semiconductor chips such as IC and LSI, liquid crystal panels, CCDs, thin film magnetic heads,
The flow of manufacturing a micromachine etc. is shown.

In step S1001 (circuit design), a semiconductor device circuit is designed. Step S1002
In (mask manufacturing), a mask having the designed circuit pattern is manufactured. On the other hand, in step S1003 (wafer manufacturing), a wafer is manufactured using a material such as silicon.
Step S1004 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the mask and wafer prepared above. The next step S1005 (assembly) is called a post-process, which is a process of forming a semiconductor chip using the wafer manufactured in step S1004, such as assembly process (dicing, bonding), packaging process (chip encapsulation), etc. Including the process of. In step S1006 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step S1005 are performed. A semiconductor device is completed through these processes and shipped (step S1007).

FIG. 11 shows a detailed flow of the wafer process.

In step S1101 (oxidation), the surface of the wafer is oxidized. In step S1102 (CVD), an insulating film is formed on the wafer surface. Step S1103
In (electrode formation), electrodes are formed on the wafer by vapor deposition. In step S1104 (ion implantation), ions are implanted in the wafer. In step S1105 (resist processing), a photosensitive agent is applied to the wafer. Step S110
In 6 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the above-described exposure apparatus. Step S11
In 07 (development), the exposed wafer is developed. In step S1108 (etching), a portion other than the developed resist image is scraped off. In step S1109 (resist stripping), the unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device, which has been difficult to manufacture in the past.

Next, another embodiment of the present invention will be described.

12 and 13 respectively show a second embodiment and a third embodiment of the reflection type mask manufacturing apparatus according to the present invention.
3 is a block diagram showing the configuration of the main part of the embodiment of FIG.

In the embodiment shown in FIG. 1, the apparatus for projecting and exposing with the exposure light is shown.
EB exposure device 1202 output from an electron beam exposure device 1202 shown in FIG. 2 and an EB exposure device that directly draws the working mask 1204, and reduction projection that reduces and projects the pattern light shown in FIG. 13 onto the working mask 1304 by the lens system 1309. Of course, it can be diverted to an exposure apparatus.

A working mask 1204 shown in FIG.
Mask moving mechanism 1205, mask state confirmation device 1206
Each of the storage device 1208 and the storage device 1208 is configured similarly to the working mask 104, the mask moving mechanism 105, the mask state confirmation device 106, and the storage device 108 shown in FIG. By directly controlling the electron beam exposure machine 1202 based on the detection result of the state confirmation device, the storage device 1208
Various mask patterns stored in the above are formed on the working mask 1204 so that the non-reflective portion is located at the defective portion.

The reduction projection exposure apparatus shown in FIG. 13 is the projection exposure apparatus shown in FIG. 1 except that a lens system 1309, which is a reduction optical system, is provided between the master mask 1303 and the working mask 1304. It has the same configuration as. Exposure light 1301 and mask type confirmation device 130 in the figure
2, master mask 1303, working mask 130
4, mask moving mechanism 1305, mask state confirmation device 13
06, main controller 1307, and storage device 1308 respectively include the exposure light 101, the mask type confirmation device 102, the master mask 103, and the working mask 10 shown in FIG.
4, mask moving mechanism 105, mask state confirmation device 10
6, and the description thereof will be omitted because it has the same configuration as the main control device 107 and the storage device 108.

In the second and third embodiments of the reflective mask according to the present invention constructed as described above, the number of defects during exposure of the resist caused by the defects is reduced,
There is an effect that it is possible to realize an EB exposure apparatus and the reduction projection exposure apparatus capable of improving the yield.

[0086]

Since the present invention is constructed as described above, it has the following effects.

[0087]

In the method according to the first aspect , by locating the defective portion of the reflective mask at the non-reflective portion of the reflective mask, it is possible to reduce the number of defects caused by the defect during exposure of the resist, There is an effect that the yield of the reflective mask fabrication can be improved.

In the method according to the second aspect , since the reflective mask is not formed for the reflective mask substrate in which the non-reflective portion cannot be located in the defective portion, the quality of the reflective mask to be manufactured is improved. There is an effect that can be improved.

The methods described in claims 3 and 4 have the effect of providing a reduction projection exposure method and an electron beam drawing method that achieve the above respective effects.

According to the fifth aspect ,
Similar to the method described in 1 , the number of defects at the time of exposure of the resist caused by the defective portion of the reflective mask can be reduced, and the yield can be improved.

According to the seventh and eighth aspects, there is an effect that a reduction projection exposure apparatus and an electron beam drawing apparatus that achieve the above effects can be realized.

In the method according to the ninth aspect, since the reflection type mask having high yield and high quality is used, there is an effect that the yield of the semiconductor device to be manufactured can be improved.

[0094]

[Brief description of drawings]

FIG. 1 is a block diagram showing a main configuration of an embodiment of a reflective mask manufacturing apparatus according to the present invention.

FIG. 2 is a view most accurately showing the structure of a reflective mask manufactured according to this embodiment.

FIG. 3 is a flowchart showing an exposure control operation of main controller 107 in the present embodiment.

FIG. 4 is a diagram showing a positional relationship between a position reference formed on a substrate by a main controller 107 performing partial exposure and a defect confirmed by a mask state confirmation device 106.

FIG. 5 is a diagram showing a formed pattern.

FIG. 6 is a diagram showing another example of a reflective mask manufactured according to the present invention.

FIG. 7 is a diagram showing another example of a reflective mask manufactured according to the present invention.

FIG. 8A is a diagram showing the configuration of a reduction projection exposure apparatus that exposes a wafer using a reflective mask according to the present invention;
FIG. 6B is a diagram showing the configuration of the image forming system.

9 is a diagram showing a configuration of a reflective mask used in the embodiment shown in FIG.

FIG. 10 is a flowchart showing manufacturing steps of a semiconductor device.

FIG. 11 is a flowchart showing detailed steps of a wafer process.

FIG. 12 is a block diagram showing a main configuration of a second embodiment of a reflective mask manufacturing apparatus according to the present invention.

FIG. 13 is a block diagram showing a main configuration of a third embodiment of a reflective mask manufacturing apparatus according to the present invention.

FIG. 14 is a diagram showing a configuration of a conventional example.

15A to 15C are diagrams showing the structure of a reflective mask.

FIG. 16 is a diagram for explaining defects that occur in the reflective mask.

[Explanation of symbols]

101 exposure light 102 mask type confirmation means 103 master mask 104 working mask 105 mask moving mechanism 106 mask state confirmation device 107 main controller 108 storage device 201 substrate 202 defect 203 reflective portion 204 non-reflective portion S301 to S306 step 405 substrate 406 defect 407 Position reference 408 Pattern 409 Reflection part pattern 410 Non-reflection part pattern 601 Substrate 602 Defect 611 Pattern 701 Substrate 702 Defect 712a Reflection part 712b Non-reflection part 813,820 Light source 814,817 Exposure light 815,816,827,828, 829 Mirror 818 Reflective mask 819 Wafer 821 Light 822 Reference alignment mark 823 Alignment mark 824 Detector 825 Mask stage 826 Wafer stage 905 Substrate 90 , 931 position reference 909 non-reflective portion pattern 910 reflecting part pattern 930 mask support plate S1071~S1077, S1181~S1189
Step 1201 Electron beam 1202 Electron beam exposure machine 1301 Exposure light 1302 Mask type confirmation means 1303 Master masks 1204, 1304 Working masks 1205, 1305 Mask movement mechanism 1206, 1306 Mask state confirmation device 1207, 1307 Main control device 1208, 1308 Storage device

─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21/027 G03F 1/08

Claims (9)

(57) [Claims] 1. A method of manufacturing a reflective mask having a pattern comprising a reflective portion and a non-reflective portion, the step of detecting a defect on a mask substrate and its position, and the non-reflective portion at a position where the defect is detected. And a step of forming a pattern so as to position the reflective mask. 2. The method of manufacturing a reflective mask according to claim 1 , wherein the mask substrate is replaced when the non-reflective portion cannot be located at a location where a defect is detected. Method for manufacturing mold mask. 3. A method for manufacturing a reflection type mask according to claim 1 or claim 2, the method for manufacturing a reflection type mask, wherein the pattern formation is performed by reduced projection exposure. 4. A method for manufacturing a reflection type mask according to claim 1 or claim 2, the method for manufacturing a reflection type mask pattern formation is characterized by performing the electron beam writing. 5. A reflection-type mask manufacturing apparatus for manufacturing a reflection-type mask having a pattern composed of a reflection portion and a non-reflection portion, comprising: holding means for holding a master mask and a mask substrate so as to face each other; Measuring means for measuring the defect and its position, a storage means for storing pattern information corresponding to the pattern of the master mask, based on the measuring means and the storage means, a non-reflective portion in the defective portion of the mask substrate An apparatus for producing a reflective mask, comprising: an alignment unit that aligns a master mask and a mask substrate so that they are aligned, and an exposure unit that exposes and transfers the aligned master mask pattern onto the mask substrate. . 6. The reflective mask manufacturing apparatus according to claim 5 , wherein the exposure unit has a reduction projection optical system. 7. A reflection type mask manufacturing apparatus for manufacturing a reflection type mask having a pattern consisting of a reflection part and a non-reflection part, comprising: holding means for holding a mask substrate; and a defect and its position of the mask substrate. Measuring means for measuring, storage means for storing pattern information to be formed on the mask, and electron beam drawing based on the measuring means and the storage means so that a non-reflecting portion is located at a defective portion of the mask substrate. And a drawing unit for forming a pattern. 8. Reflecting soft X-rays or vacuum ultraviolet rays from a light source
Pattern mask and irradiate the mask
An exposure apparatus for reducing and projecting light onto the reflective mask , wherein the reflective mask is the reflective mask of claim 1.
An exposure apparatus manufactured by a manufacturing method. 9. A method of manufacturing a reflective mask according to claim 1.
Of exposing a pattern on a wafer using a reflective mask manufactured by the method , and developing the exposed wafer
A device manufacturing method comprising the steps of: