JP2004266300A - Reflecting mask - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize a reflecting mask that causes no problem in manufacturing a wafer even on a substrate having defects in the external shape. <P>SOLUTION: The reflecting mask is provided with a multilayer that serves as a reflecting region with a non-reflecting region formed thereon and a substrate that carries the multilayer. The non-reflecting and reflecting regions together forms a pattern, and in the area surrounding the regions where the pattern is formed on the substrate the multilayer is not formed. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

  The present invention relates to a reflective mask used in a lithography apparatus that irradiates a reflective mask with X-rays or vacuum ultraviolet rays and reduces and projects the resist on a resist by a reflecting mirror.

  In lithography, in which a fine pattern is optically transferred to a resist in order to manufacture a semiconductor device, an exposure apparatus using X-rays or vacuum ultraviolet rays with higher resolution is used as the integration and miniaturization of the semiconductor device are increased. It has become. Such an exposure apparatus irradiates a reflective mask on which a transfer pattern is formed with X-rays or vacuum ultraviolet rays from a light source such as a synchrotron or a laser plasma, and a plurality of X-rays or vacuum ultraviolet rays reflected by the masks. Is projected onto the resist in a reduced size by a reflecting mirror.

  As a reflection type mask used in the above-described exposure apparatus, there has been one in which an absorber or an antireflection film according to a transfer pattern is provided on a reflection mirror. As the reflector, a multilayer film in which a plurality of substances are alternately stacked is used.

  As a method for repairing a defect in the production of a reflective mask, there is a method described in Japanese Patent Application Laid-Open No. 5-55120 shown in FIG.

  In FIG. 14, a lower multilayer film 1402 as a reflection member, a non-reflective body 1403, and an upper multilayer film 1404 as a reflection member are successively formed on a substrate 1401, and then the upper multilayer film 1404 is formed in a desired pattern. To form a reflection part.

  When a partial defect such as defective reflection occurs in the pattern formed by the upper multilayer film 1404, the lower multilayer film 1402 is exposed by removing both the upper multilayer film 1404 and the non-reflector 1403 at the defective portion, thereby removing the lower multilayer film 1402. The defect is repaired by using 1402 as a reflection portion of a reflection type mask.

  The structure of the reflective mask can be roughly classified into three types shown in FIGS. 15 (a), (b) and (c).

  In FIG. 15A, a reflective portion 1502 formed of a multilayer film is laminated on a substrate 1501, and a patterned non-reflective portion 1503 is further laminated thereon. In FIG. 15B, a reflective portion 1505 formed of a multilayer film on a substrate 1504 and patterned is formed. In FIG. 15C, a reflective portion 1507 of a multilayer film is formed on the substrate 1506 and the regularity of the layer structure of the reflective portion 1507 is partially destroyed, so that the reflective portion 1507 is formed in the reflective portion 1507. A patterned non-reflection portion 1508 is formed.

  Defects that occur in the reflective mask configured as described above will be described.

  In the reflection type mask shown in FIG. 16, a mask pattern is formed by a reflection pattern 1609 and a non-reflection pattern 1610, but a white defect where an originally non-reflection part is reflected and a black defect where an originally reflection part is non-reflection. Has occurred.

When categorizing the causes of these defects in the production of reflective masks,
First, if there is a defect in the substrate of the reflective mask,
Second, when a defect occurs during the formation of the multilayer film of the reflecting portion,
Thirdly, when this occurs when a desired pattern of the reflection part and the non-reflection part is formed,
And divided into

  As shown in Table 1, the ease of repairing a defect generated when a desired pattern of the reflecting portion and the non-reflecting portion is formed differs depending on the structure and manufacturing method of the reflective mask as shown in Table 1.

  In the table, the degree of ease of defect repair is shown in the order of ○, △, and ×, and △ / 示 す indicates that the degree is intermediate between ○ and △.

  In particular, it is extremely difficult to repair a black defect in the two types shown in FIGS. 15B and 15C by forming a reflective portion, that is, a multilayer film structure at the defective portion again.

  In order to avoid the above-mentioned difficulties, the multilayered film described in Japanese Patent Application Laid-Open No. 5-55120 discloses a multi-layer film in which a reflective portion having a desired pattern is formed in advance in a reflective mask of the type shown in FIG. A repair is performed by providing a multilayer film in the lower layer and exposing the lower multilayer film at the defective portion.

  However, the above-described defect repair method has a problem that the reflective mask is expensive because there is a step of forming a multilayer film twice in the production of the reflective mask. In addition, the defect of the substrate of the reflective mask, which is the first cause of the defect, is mainly caused by an external defect such as attached dust or unevenness, and the surface of the film formed on the substrate is flat. It is not to become. The reflection portion formed on the substrate having such a defect does not reflect the exposure light normally and cannot transfer an accurate pattern to the wafer.

  Of course, even if two reflective multilayer films are formed, the reflective multilayer film near the substrate side is easily affected by the defect of the substrate, so that when a defect is caused by a substrate defect, the defect cannot be repaired. There is.

  The substrate of the reflective mask is manufactured by polishing. Further, since the multilayer film laminated on the substrate is formed of tens to hundreds of layers, the substrate on which these film formation processes are performed is very expensive. The cost can be kept low by using without removing.

  SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems of the related art, and has realized an apparatus for manufacturing a reflective mask that does not cause a problem in wafer manufacture even for a substrate having an external defect. The purpose is to do.

The reflection type mask of the present invention has a multilayer film as a reflection portion on which a non-reflection portion is formed, and a substrate supporting the multilayer film, and a pattern is formed by the non-reflection portion and the reflection portion. A reflective mask to be formed,
The multilayer film does not exist around the area where the pattern is formed on the substrate.

  In this case, an alignment mark may be provided on a portion of the substrate where the multilayer film does not exist.

  The above-described problem is that soft X-rays or vacuum ultraviolet rays from a light source that generates soft X-rays or vacuum ultraviolet rays are applied to a reflective mask on which a pattern as an original is formed, and the soft X-rays or This is generated in a reflection type mask used in an exposure apparatus that reduces and projects vacuum ultraviolet light onto a resist-coated wafer by a plurality of reflecting mirrors.

  In the present invention, a position reference is formed on the reflective mask (including the outer shape of the substrate) before forming a desired pattern comprising a reflective portion or a non-reflective portion. The position is measured as a position with respect to the reference, and the position of the defect is stored in the storage device as the position with respect to the position reference.

  The arrangement of the desired pattern consisting of the reflective portion or the non-reflective portion is stored in advance in a storage device, and based on the data stored in the storage device, the reflective portion or the non-reflective portion is arranged so that the defect is located in the non-reflective portion. Is determined with respect to the position reference of the desired pattern consisting of When it is difficult to locate all the measured defects in the non-reflective portion, the reflective mask before forming the desired pattern including the reflective portion or the non-reflective portion is removed from the reflective mask manufacturing process.

  The present invention is characterized by being manufactured by forming a reflective portion or a non-reflective portion in order to form a desired pattern comprising a reflective portion or a non-reflective portion at a position determined with respect to the position reference. The present invention is achieved by a reflective mask for lithography, a manufacturing method thereof, an exposure apparatus using the reflective mask, and a semiconductor device manufactured by the exposure apparatus.

Before forming a desired pattern consisting of a reflective part or a non-reflective part, the defect of the reflective mask occurs,
If there is a defect on the reflective mask substrate,
If a defect occurs during the formation of the multilayer film of the reflection part,
There is a case where dust adheres during the application of the resist.

  In the present invention, a pattern defect generated during exposure and development of a resist is not regarded as a defect of a reflective mask generated before a desired pattern including a reflective portion or a non-reflective portion is formed. For this reason, the defect inspection is performed before, after or after application of the multilayer film.

  In a reduction exposure apparatus, reduction exposure of about 1/5 to 1/4 is usually performed. A reduction exposure apparatus using soft X-rays or vacuum ultraviolet rays is used when the minimum line width on a wafer becomes 0.2 μm or less. Therefore, the minimum line width on the mask is 1 μm or less. For this reason, a defect larger than 1/10 of the minimum line width becomes a problem in the reflective mask.

  Defect inspection usually includes a method of comparing with a pattern known to be no defect by observing with an optical microscope, a method of operating with an electron beam and comparing with data, a method of scanning a laser beam and inspecting scattered light, etc. is there.

  In the present invention, a method of scanning a laser beam and inspecting scattered light is preferred because the defect has occurred before a desired pattern including a reflective portion or a non-reflective portion is formed, but is not limited thereto.

  At least one defect found by the defect inspection is stored with respect to a position reference of a reflection mask formed beforehand or a position reference of a reflection mask formed at the latest until the end of the inspection. . Obviously, its position is determined by at least two pieces of information in the plane from the position reference. Therefore, the position reference includes a position reference of at least two points, a position reference composed of a point and a straight line, and the like.

  Defects of the reflective mask generated before forming a desired pattern consisting of a reflective portion or a non-reflective portion found by inspection are calculated so that the defective portion is located at the non-reflective portion of the desired pattern, A desired pattern arrangement is determined with respect to a position reference.

  As a result of the calculation, when all of the problematic defects cannot be located in the non-reflective portion, the reflective mask before the pattern formation is removed from the reflective mask forming step.

  Thereafter, when exposing the resist with an electron beam, ultraviolet, vacuum ultraviolet, or soft X-ray, or forming a desired non-reflective portion with an ion beam or the like, a pattern is formed according to the arrangement determined with respect to the position reference.

  In the reflective mask manufactured according to the present invention having the above-described characteristics, all the defects that occur before forming the pattern are located in the non-reflective portions. When exposing a wafer using the reflective mask according to the present invention, even if there is a defect in the reflective mask substrate, there is no problem in wafer exposure, and the adverse effects due to the defect in the reflective mask substrate are effectively ignored. It will be something that can be done.

  Next, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a block diagram showing a main configuration of an embodiment of a reflection type mask manufacturing apparatus according to the present invention.

  In this embodiment, a projection exposure portion is shown in which a circuit pattern drawn together with a pattern serving as a position reference on a master mask 103 by an exposure light 101 is transferred to a working mask 104. The master mask 103 is held by a mask type checking device 102 which is a master mask mounting unit having a function of checking the type of the master mask 103, and a working mask 104 facing the master mask 103 is a mask moving mechanism which is a mask moving unit. 105. The mask moving mechanism 105 can move the load XY with respect to the plane in the horizontal direction of the drawing, and can also rotate θ, so that the working mask 104 can move freely in a plane opposed to the master mask 103. It has been.

  The mask state checking device 106, which is a defect position measuring means, includes a laser oscillator as a light source, a scanning mechanism for scanning the laser output of the laser oscillator toward the working mask 104, and a detecting means for reflected laser light. A defect on the working mask 104 is detected from the scattering state of the reflected light indicated by the detection means, and the result is output to the main controller 107. The above-described mask type checking device 102 checks the type of the master mask 103 by using the identification mark provided on the master mask 103, and outputs the result to the main control device 107.

  The main control unit 107 is connected to a storage unit 108 which is a storage unit for storing the mask pattern of the master mask 103 in accordance with its type and controls its operation. The working mask 104 is moved via the mask moving mechanism 105 in accordance with the contents confirmed by the type confirmation device 102 and the contents stored in the storage device 108, and the exposure position is controlled. Also, with respect to the exposure light 101, it is possible to perform partial exposure control by controlling the exposure light source itself or the shielding means provided in the optical path.

In this embodiment, the main controller 107 forms the position reference on the working mask 104 by performing the above-described partial exposure of the position reference pattern formed in the mask type confirmation device 102. ,
FIG. 2 is a view most accurately showing the structure of the reflective mask manufactured according to this embodiment.

  There is a defect 202 which is deposited dust on the substrate 201, a reflective portion 203 which is a reflective multilayer film is formed on the substrate 201 including the defect 202, and a non-reflective portion 204 is further partially laminated thereon. Is formed. Although the upper portion of the defect 202 is not flat, the non-reflective portion 204 is formed in a portion corresponding to the defect 202. Therefore, in the reflection type mask manufactured according to the present embodiment, the defect caused when the wafer is exposed is caused. The adverse effects are practically negligible.

  The control operation of the main control unit 107 for forming a reflective mask having the above-described structure will be described with reference to FIGS.

  FIG. 3 is a flowchart showing an exposure control operation of the main controller 107 in the present embodiment. FIG. 4 is a diagram showing a position reference formed on the substrate by the main controller 107 performing partial exposure, and a mask state confirmation device 106. FIG. 6 is a diagram showing a positional relationship of a defect confirmed by the above.

  The exposure operation of this embodiment will be described with reference to FIGS.

  When the exposure operation is started, the main controller 107 controls the exposure light source itself or the shielding means provided in the optical path so that the exposure light is applied only to the pattern portion serving as the position reference provided in the master mask 103. By controlling, the position reference 407 shown in FIG. 4 is formed on the working mask 104 (step S301). Subsequently, the position of the defect 406 on the working mask 104 is confirmed by the mask state confirmation device 106 (step S302). Next, the position of the defect 406 is stored in the storage device 108 as a relative position with respect to the position reference 407 (step S303). Subsequently, the position of the defect 406 corresponds to the mask type output by the mask type confirmation device 102 to the storage device 108. The stored pattern is read out (step S304).

  Next, the arrangement of the working mask 104 is calculated such that all the positions of the defect 406 with respect to the position reference 407 stored in the storage device 108 in step S303 become the non-reflective portion 410 of the pattern read in step S304. The movement position is determined by calculating the position of the pattern with respect to the position reference 407 (step S305). The pattern position with respect to the position reference 407 determined in step S305 is stored in the storage device 108 so as to be used for wafer exposure using a reflective mask according to the present invention described later. Subsequently, the position of the working mask 104 is moved via the mask moving mechanism 105 in accordance with the above determined contents, and the exposure light 101 is irradiated to form a pattern (step S306).

  When the pattern is arranged as shown by the dotted line in FIG. 4, all of the defects 406 are located outside the pattern or at the non-reflection portion 410, so that the adverse effects of the defects during wafer exposure can be eliminated.

  In the step of determining the movement position in the above step S305, it is impossible to locate all the defects which are problematic due to too many defects 406 or some arrangement of the defects 406 in the non-reflection portion. It happens.

  When such a problem occurs, the working mask 104 having the defect before the formation of the desired pattern is removed from the reflective mask manufacturing process without continuing the reflective mask manufacturing process. For this reason, unnecessary time is not required for the manufacturing time.

  As a method of solving the problem other than the above-described removal, a method of replacing the master mask 103 by reading out the type of the master mask 103 having a pattern adapted to the position of each defect 406 from the storage device 108 is also conceivable. In the case of such a configuration, although the manufacturing time is long, the use efficiency of the working mask 104 can be improved, the yield can be increased, and the price of the manufactured semiconductor element can be reduced.

  The method for forming the reflection portion pattern 409 and the non-reflection portion 410 shown in FIG. 5 formed as described above will be specifically described below.

  As a commonly used method, first, a non-reflection portion is formed by vapor deposition on a multilayer film as a reflection portion formed on a polished substrate. As the substrate, a substrate obtained by polishing SiC, quartz, Si, or the like is preferably used.

  As the multilayer film as the reflection portion, a single substance such as Mo, Ru, Rh, or a combination of an alloy and Si is preferably used in the vicinity of a wavelength of 13 nm. In the vicinity of a wavelength of 5 nm, a simple substance such as Cr, Co, Ni, or a combination of an alloy and C is preferably used. As a material for the non-reflective portion, a heavy metal such as Au, Pt, or W is preferably used. When fabricating a halftone-type reflective mask, semiconductors and metals such as Si, Al, and Cr are also preferably used.

  Next, a resist is coated, and a desired pattern is exposed to exposure light (or an electron beam) in the ultraviolet and visible regions. At this time, as described above, the exposure is performed such that the position of the pattern is determined in advance with respect to the position reference, that is, all the defects are placed in the non-reflective portion.

  The resist may be of a negative type or a positive type. After development, the resist is exposed so that a desired pattern of the non-reflective portion is obtained as a resist pattern. After that, the non-reflective member on the reflective portion is removed by dry etching to expose the multilayer film as the reflective portion.

  Thus, a reflective mask of the type shown in FIG. A reflection type mask of the type shown in FIG. 13A coats a resist on a multilayer film as a reflection part, exposes and develops, deposits a non-reflection part, and removes the resist to form a reflection part. It can also be manufactured by a so-called lift method of exposing.

  Similarly, in the reflective masks corresponding to FIGS. 13B and 13C, by locating the defective portion in the non-reflective portion as shown in FIGS. 6 and 7, the effect can be effectively ignored. The effects of defects can be reduced. In the production of the reflection type mask shown in FIG. 7, a non-reflection portion can be produced by irradiating the reflection portion with a focused ion beam to break the regularity of the multilayer film as the reflection portion.

  As a method of forming a desired pattern, in addition to the exposure of the resist by the electron beam as described above, the destruction of the regularity of the multilayer film by the focused ion beam, the exposure of the resist by ultraviolet, vacuum ultraviolet, X-ray, or the like. Of course.

  FIG. 8A is a diagram showing a configuration of a reduction projection exposure apparatus that exposes a wafer using the reflective mask 818 manufactured as described above, and FIG. 8B is a diagram showing a configuration of an image forming system thereof. It is.

  Exposure light 814, which is soft X-rays (or vacuum ultraviolet rays) emitted from a light source 813 that generates soft X-rays (or vacuum ultraviolet rays), is expanded through an illumination optical system including two mirrors 815 and 816. The light is converted into light 817 and is applied to the reflective mask 818 held on the mask stage 825. The soft X-rays and the vacuum ultraviolet rays reflected from the reflection part of the reflection type mask 818 are irradiated on the wafer 819 held on the wafer stage 826 by the imaging optical system shown in FIG. The upper pattern is reduced and imaged on the wafer 819.

  A reference alignment mark 822 is provided on the mask stage 825, and the alignment mark 822 is irradiated with light 821 from the light source 820 turned back by the mirror 830. The reflected light of the reference alignment mark 822 interferes with the alignment mark 823 on the wafer stage 826 via the above-described imaging optical system, and the intensity of the interference is measured by the detector 824 to adjust the alignment of the reflective mask 818 and the wafer 819. Done.

  The light source 820 for performing alignment may be the same as the light source 813 that generates soft X-rays (or vacuum ultraviolet rays). Further, the alignment mark 823 may be a reflection pattern of a soft X-ray (or vacuum ultraviolet ray) formed of a multilayer film on both the mask stage 825 and the wafer stage 826. Although not shown, the alignment mark 823 on the wafer stage 826 and the alignment mark on the wafer 819, the reference alignment mark 822 on the mask stage 825, and the alignment mark on the reflective mask 818 are respectively aligned by an alignment optical system. It is.

  FIGS. 9A and 9B are diagrams showing the configuration of the reflective mask 818 in the above embodiment.

  The substrate 905 included in the reflective mask 818 is attached to the mask support plate 930. The chucking of the reflective mask 818 to the mask stage 825 is performed using the outer shape of the mask support plate 930 or the position reference 931 set on the mask support plate 930, and this step is pre-alignment of the mask. Therefore, the mask pattern formed by the non-reflective portion pattern 909 and the reflective portion pattern 910 on the reflective mask 818 is predetermined with respect to the outer shape of the mask support plate 930 or the position reference 931 provided on the mask support plate. Must be in position.

  In the reflective mask 818 of the present invention, a position reference is formed on the substrate 905 under the control of the main controller 107 shown in FIG. 1, and the position of a desired pattern including a reflective portion or a non-reflective portion is determined by the position reference. It is set as a position for. For this reason, the substrate 905 is attached to the mask support plate 930 based on the pattern position with respect to the position reference 907 on the substrate 905 stored in the storage device 108 shown in FIG. The position reference 931 and the pattern are performed so as to have a predetermined positional relationship, and based on this, the above-described alignment operation is performed.

  Although the control device for performing the alignment operation has not been particularly described, the control device or the main control device 107 may share the storage device 108 illustrated in FIG. 1 as a storage unit. With this configuration, it is possible to use the position reference 907 on the substrate 905 as a reference alignment mark and perform an alignment operation based on the pattern position relative to the position reference 907 on the substrate 905 stored in the storage device 108. Become. Therefore, the bonding does not require that the positional reference 931 provided on the mask support plate 930 and the pattern have a predetermined positional relationship, and it is sufficient to simply bond the patterns. This has the effect of shortening the working time and improving the manufacturing efficiency.

  Next, an embodiment of a device manufacturing method using the above-described exposure apparatus will be described.

  FIG. 10 shows a flow of manufacturing micro devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.).

  In step S1001 (circuit design), a circuit of a semiconductor device is designed. In step S1002 (mask production), a mask on which the designed circuit pattern is formed is produced. On the other hand, in step S1003 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step S1004 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step S1005 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step S1004, and includes an assembly process (dicing, bonding), a packaging process (chip encapsulation), and the like. Step. In step S1006 (inspection), inspections such as an operation check test and a durability test of the semiconductor device manufactured in step S1005 are performed. Through these steps, a semiconductor device is completed and shipped (step S1007).

  FIG. 11 shows a detailed flow of the wafer process.

  In step S1101 (oxidation), the surface of the wafer is oxidized. In step S1102 (CVD), an insulating film is formed on the wafer surface. In step S1103 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step S1104 (ion implantation), ions are implanted into the wafer. In step S1105 (resist processing), a photosensitive agent is applied to the wafer. In step S1106 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the exposure apparatus described above. In step S1107 (developing), the exposed wafer is developed. In step S1108 (etching), portions other than the developed resist image are removed. In step S1109 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device, which has been conventionally difficult to manufacture.

  Next, another embodiment of the present invention will be described.

  FIG. 12 and FIG. 13 are block diagrams showing a main part configuration of a second embodiment and a third embodiment of the reflection type mask manufacturing apparatus according to the present invention.

  In the embodiment shown in FIG. 1, an apparatus for projecting and exposing with exposure light is shown. However, the above configuration directly applies the working mask 1204 to the electron beam 1201 output from the electron beam exposure machine 1202 shown in FIG. Naturally, the present invention can be diverted to an EB exposure apparatus for drawing and a reduction projection exposure apparatus for reducing and exposing the pattern light shown in FIG. 13 to a working mask 1304 by a lens system 1309.

  The working mask 1204, the mask moving mechanism 1205, the mask state checking device 1206, and the storage device 1208 in FIG. 12 respectively correspond to the working mask 104, the mask moving mechanism 105, the mask state checking device 106, and the storage device 108 shown in FIG. The main control unit 1207 directly controls the electron beam exposure machine 1202 based on the detection result of the mask state confirmation device, and thereby various types of data stored in the storage device 1208. A mask pattern is formed on the working mask 1204 so that the non-reflection portion is located at the defect portion.

  The reduction projection exposure apparatus shown in FIG. 13 is the same as the projection exposure apparatus shown in FIG. 1 except that a lens system 1309 serving as a reduction optical system is provided between a master mask 1303 and a working mask 1304. Configuration. The exposure light 1301, mask type confirmation device 1302, master mask 1303, working mask 1304, mask moving mechanism 1305, mask state confirmation device 1306, main control device 1307, and storage device 1308 in FIG. 101, a mask type checking device 102, a master mask 103, a working mask 104, a mask moving mechanism 105, a mask state checking device 106, a main control device 107, and a storage device 108.

  In the second and third embodiments of the reflective mask according to the present invention configured as described above, an EB exposure apparatus capable of reducing defects at the time of exposing a resist caused by defects and improving the yield. In addition, there is an effect that a reduced projection exposure apparatus can be realized.

FIG. 1 is a block diagram illustrating a configuration of a main part of an embodiment of a reflective mask manufacturing apparatus according to the present invention. It is a figure which shows the structure of the reflective mask manufactured by this example most accurately. 5 is a flowchart illustrating an exposure control operation of the main control device 107 according to the present embodiment. FIG. 5 is a diagram showing a positional relationship between a position reference formed on a substrate by performing a partial exposure by a main control device 107 and a defect confirmed by a mask state confirmation device 106. It is a figure showing the pattern formed. It is a figure showing other examples of a reflective mask manufactured by the present invention. It is a figure showing other examples of a reflective mask manufactured by the present invention. (A) is a diagram showing a configuration of a reduction projection exposure apparatus that exposes a wafer using a reflection type mask according to the present invention, and (b) is a diagram showing a configuration of an image forming system thereof. FIG. 9 is a diagram showing a configuration of a reflective mask used in the embodiment shown in FIG. 5 is a flowchart illustrating a manufacturing process of a semiconductor device. 6 is a flowchart illustrating detailed steps of a wafer process. FIG. 7 is a block diagram showing a main configuration of a second embodiment of the reflection mask manufacturing apparatus according to the present invention. FIG. 11 is a block diagram showing a main configuration of a third embodiment of the reflective mask manufacturing apparatus according to the present invention. FIG. 9 is a diagram illustrating a configuration of a conventional example. (A)-(c) is a figure which shows the structure of a reflective mask. FIG. 3 is a diagram for explaining a defect that occurs in a reflective mask.

Explanation of reference numerals

Reference Signs List 101 exposure light 102 mask type checking means 103 master mask 104 working mask 105 mask moving mechanism 106 mask state checking device 107 main control device 108 storage device 201 substrate 202 defect 203 reflecting portion 204 non-reflecting portion S301 to S306 step 405 substrate 406 defect 407 Position reference 408 Pattern 409 Reflection pattern 410 Non-reflection pattern 601 Substrate 602 Defect 611 Pattern 701 Substrate 702 Defect 712a Reflection 712b Non-reflection 812,820 Light source 814,817 Exposure light 815,816,827,828, 829 Mirror 818 Reflective mask 819 Wafer 821 Light 822 Reference alignment mark 823 Alignment mark 824 Detector 825 Mask stage 826 Wafer Stage 905 Substrate 907,931 Position reference 909 Non-reflective portion pattern 910 Reflective portion pattern 930 Mask support plate S1071 to S1077, S1181 to S1189 Step 1201 Electron beam 1202 Electron beam exposure machine 1301 Exposure light 1302 Mask type confirmation means 1303 Master mask 1204 1304 Working mask 1205, 1305 Mask moving mechanism 1206, 1306 Mask state checking device 1207, 1307 Main controller 1208, 1308 Storage device

Claims (2)

A reflection type mask having a multilayer film as a reflection portion having a non-reflection portion formed thereon and a substrate supporting the multilayer film, and forming a pattern with the non-reflection portion and the reflection portion. ,
A reflective mask having no multilayer film around a region on the substrate where the pattern is formed.   2. The reflection type mask according to claim 1, wherein an alignment mark is provided on a portion of the substrate where the multilayer film does not exist.

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