JPS57105890A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- JPS57105890A JPS57105890A JP18095380A JP18095380A JPS57105890A JP S57105890 A JPS57105890 A JP S57105890A JP 18095380 A JP18095380 A JP 18095380A JP 18095380 A JP18095380 A JP 18095380A JP S57105890 A JPS57105890 A JP S57105890A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- erase
- memory cell
- control gate
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000004020 conductor Substances 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18095380A JPS57105890A (en) | 1980-12-20 | 1980-12-20 | Semiconductor storage device |
| DE8181305348T DE3174417D1 (en) | 1980-12-08 | 1981-11-11 | Semiconductor memory device |
| EP81305348A EP0054355B1 (de) | 1980-12-08 | 1981-11-11 | Halbleiterspeicheranordnung |
| US06/321,320 US4437172A (en) | 1980-12-08 | 1981-11-13 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18095380A JPS57105890A (en) | 1980-12-20 | 1980-12-20 | Semiconductor storage device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57105890A true JPS57105890A (en) | 1982-07-01 |
| JPS616475B2 JPS616475B2 (de) | 1986-02-26 |
Family
ID=16092156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18095380A Granted JPS57105890A (en) | 1980-12-08 | 1980-12-20 | Semiconductor storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57105890A (de) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0191395A (ja) * | 1987-10-01 | 1989-04-11 | Toshiba Corp | 不揮発性半導体メモリ |
| JPH0250398A (ja) * | 1988-08-12 | 1990-02-20 | Toshiba Corp | 不揮発性半導体メモリ |
| JP2007505784A (ja) * | 2003-09-17 | 2007-03-15 | オーシャン パワー デリバリー リミテッド | 係留システム |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014225642B4 (de) | 2014-12-12 | 2016-06-30 | Continental Automotive Gmbh | Ventilanordnung und Hochdruckpumpe für ein Kraftstoffeinspritzsystem einer Brennkraftmaschine |
-
1980
- 1980-12-20 JP JP18095380A patent/JPS57105890A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0191395A (ja) * | 1987-10-01 | 1989-04-11 | Toshiba Corp | 不揮発性半導体メモリ |
| JPH0250398A (ja) * | 1988-08-12 | 1990-02-20 | Toshiba Corp | 不揮発性半導体メモリ |
| JP2007505784A (ja) * | 2003-09-17 | 2007-03-15 | オーシャン パワー デリバリー リミテッド | 係留システム |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS616475B2 (de) | 1986-02-26 |
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