JPS5694669A - Manufacture of mos-type integrated circuit - Google Patents

Manufacture of mos-type integrated circuit

Info

Publication number
JPS5694669A
JPS5694669A JP17168479A JP17168479A JPS5694669A JP S5694669 A JPS5694669 A JP S5694669A JP 17168479 A JP17168479 A JP 17168479A JP 17168479 A JP17168479 A JP 17168479A JP S5694669 A JPS5694669 A JP S5694669A
Authority
JP
Japan
Prior art keywords
gate
film
substrate
sio2 film
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17168479A
Other languages
English (en)
Inventor
Hiroshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17168479A priority Critical patent/JPS5694669A/ja
Publication of JPS5694669A publication Critical patent/JPS5694669A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP17168479A 1979-12-27 1979-12-27 Manufacture of mos-type integrated circuit Pending JPS5694669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17168479A JPS5694669A (en) 1979-12-27 1979-12-27 Manufacture of mos-type integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17168479A JPS5694669A (en) 1979-12-27 1979-12-27 Manufacture of mos-type integrated circuit

Publications (1)

Publication Number Publication Date
JPS5694669A true JPS5694669A (en) 1981-07-31

Family

ID=15927770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17168479A Pending JPS5694669A (en) 1979-12-27 1979-12-27 Manufacture of mos-type integrated circuit

Country Status (1)

Country Link
JP (1) JPS5694669A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116166A (ja) * 1983-11-29 1985-06-22 Fujitsu Ltd 半導体装置の製造方法
JPS60117769A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体メモリ装置
JP2010021365A (ja) * 2008-07-10 2010-01-28 Fujitsu Microelectronics Ltd 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116166A (ja) * 1983-11-29 1985-06-22 Fujitsu Ltd 半導体装置の製造方法
JPH0578188B2 (ja) * 1983-11-29 1993-10-28 Fujitsu Ltd
JPS60117769A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体メモリ装置
JP2010021365A (ja) * 2008-07-10 2010-01-28 Fujitsu Microelectronics Ltd 半導体装置の製造方法

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